SGS Thomson Microelectronics BTB04-600T, BTB04-600S, BTB04-400T, BTB04-400D, BTA04-400A Datasheet

	BTA04 T/D/S/A
®	BTB04 T/D/S/A
	SENSITIVE GATE TRIACS

FEATURES

■Very low IGT = 10mA max

■Low IH = 15mA max

■BTA Family:

Insulating voltage = 2500V(RMS) (UL recognized: E81734)

DESCRIPTION

The BTA/BTB04 T/D/S/A triac family are high performance glass passivated PNPN devices. These parts are suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching.

ABSOLUTE RATINGS (limiting values)

A2

G

A1

A1

A2G

TO-220AB

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (360° conduction angle)

BTA

Tc = 90°C

4

A

BTB

Tc = 95°C

ITSM

Non repetitive surge peak on-state current

tp = 8.3ms

42

A

(Tj initial = 25°C)

tp = 10ms

40

I2t

I2t value

tp = 10ms

8

A2s

dI/dt

Critical rate of rise of on-state current

Repetitive

10

A/µs

Gate supply: IG = 50mA dIG/dt = 0.1A/µs

F = 50Hz

Non repetitive

50

Tstg

Storage and operating junction temperature range

-40 to +150

°C

Tj

-40 to +110

Tl

Maximum lead soldering temperature during 10s at 4.5mm from case

260

°C

Symbol

Parameter

BTA / BTB04-

Unit

400 T/D/S/A

600 T/D/S/A

700 T/D/S/A

VDRM

Repetitive peak off-state voltage Tj = 110°C

400

600

700

V

VRRM

September 2001 - Ed: 1A

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BTA04 T/D/S/A

BTB04 T/D/S/A

THERMAL RESISTANCE

Symbol

Parameter

Value

Unit

Rth (j-a)

Junction to ambient

60

°C/W

Rth (j-c) DC

Junction to case for DC

BTA

4.4

°C/W

BTB

3.2

Rth (j-c) AC

Junction to case for 360° conduction angle (F = 50Hz)

BTA

3.3

°C/W

BTB

2.4

GATE CHARACTERISTICS (maximum values)

PG(AV) = 1W PGM = 40W (tp = 20µs)

IGM = 4A (tp = 20µs)

VGM = 16V (tp = 20µs)

ELECTRICAL CHARACTERISTICS

Symbol

Test conditions

Quadrant

BTA / BTB04

Unit

T

D

S

A

IGT

VD = 12V (DC)

RL = 33Ω

Tj = 25°C

I - II - III

MAX.

5

5

10

10

mA

IV

MAX.

5

10

10

25

VGT

VD = 12V (DC)

RL = 33Ω

Tj = 25°C

I - II - III - IV

MAX.

1.5

V

VGD

VD = VDRM

RL = 3.3kΩ

Tj =110°C

I - II - III - IV

MIN.

0.2

V

tgt

VD = VDRM

IG = 40mA

Tj = 25°C

I - II - III - IV

TYP.

2

µs

dIG/dt = 0.5A/µs

IL

IG = 1.2IGT

Tj = 25°C

I - III - IV

TYP.

10

10

20

20

mA

II

20

20

40

40

IH*

IT = 100mA Gate open

Tj = 25°C

MAX.

15

15

25

25

mA

VTM *

ITM = 5.5A

tp = 380µs

Tj = 25°C

MAX.

1.65

V

IDRM

VDRM rated

Tj = 25°C

MAX.

0.01

mA

IRRM

VRRM rated

Tj = 110°C

MAX.

0.75

dV/dt *

Linear slope up to

Tj = 110°C

TYP.

10

10

-

-

V/ μs

VD = 67% VDRM gate open

MIN.

-

-

10

10

(dI/dt)c*

(dI/dt)c = 1.8A/ms

Tj = 110°C

TYP.

1

1

5

5

V/µs

* For either polarity of electrode A2 voltage with reference to electrode A1

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