® |
BAT54, A, C, S |
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP SURFACE MOUNT DEVICE
DESCRIPTION
Schottky barrier diodes encapsulated in a SOT-23 small SMD packages.
Double diodes with different pining are available.
ABSOLUTE RATINGS (limiting values)
|
A |
|
K |
|
|
Nc |
|
|
A |
K |
|
|
||
BAT54 |
|
|
|
A1 |
|
K |
K |
|
A1 |
||
|
||
A2 |
|
|
|
A2 |
|
|
K1 |
A |
|
A |
|
K1 |
|
|
|
|
|
K2 |
|
|
|
K2 |
|
BAT54A |
|
|
|
A2 |
A1 |
|
|
K2 |
|
A1 |
|
K1 |
K2 |
|
|
|
|
A2 |
K1 |
|
|
BAT54C |
BAT54S |
SOT-23
Symbol |
Parameter |
|
Value |
Unit |
|
|
|
|
|
VRRM |
Repetitive peak reverse voltage |
|
30 |
V |
|
|
|
|
|
IF |
Continuous forward current |
|
0.3 |
A |
|
|
|
|
|
IFSM |
Surge non repetitive forward current |
tp=10ms sinusoidal |
1 |
A |
|
|
|
|
|
Ptot |
Power dissipation (note 1) |
Tamb = 25°C |
250 |
mW |
|
|
|
|
|
Tstg |
Maximum storage temperature range |
|
- 65 to +150 |
°C |
|
|
|
|
|
Tj |
Maximum operating junction temperature * |
|
150 |
°C |
|
|
|
|
|
TL |
Maximum temperature for soldering during 10s |
260 |
°C |
|
|
|
|
|
|
Note 1: for double diodes, Ptot is the total dissipation of both diodes.
* : dPtot |
< |
1 |
thermal runaway condition for a diode on its own heatsink |
|
Rth(j−a) |
||||
dTj |
|
|
June 1999 - Ed: 3A |
1/5 |
|
|
BAT54, A, C, S
THERMAL RESISTANCE
Symbol |
Parameter |
Value |
Unit |
|
|
|
|
Rth (j-a) |
Junction to ambient (*) |
500 |
°C/W |
|
|
|
|
(*) Mounted on epoxy board with recommended pad layout.
STATIC ELECTRICAL CHARACTERISTICS (per diode)
Symbol |
Parameters |
|
|
Tests conditions |
Min. |
|
Typ. |
Max. |
Unit |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
VF * |
Forward voltage drop |
|
Tj = 25°C |
IF = 0.1 mA |
|
|
|
240 |
mV |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IF = 1 mA |
|
|
|
320 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IF = 10 mA |
|
|
|
400 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IF = 30 mA |
|
|
|
500 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
IF = 100 mA |
|
|
|
900 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
IR ** |
Reverse leakage current |
Tj = 25°C |
VR = 30 V |
|
|
|
1 |
μA |
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Tj = 100°C |
|
|
|
|
100 |
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Pulse test : |
* tp = 380 μs, δ < 2% |
|
|
|
|
|
|
|
|
|
|
||
|
|
** tp = 5 ms, δ < 2% |
|
|
|
|
|
|
|
|
|
|
|
DYNAMIC CHARACTERISTICS (Tj = 25 °C) |
|
|
|
|
|
|
|
|
|||||
|
|
|
|
|
|
|
|
|
|
|
|||
Symbol |
|
Parameters |
|
|
Tests conditions |
Min. |
|
Typ. |
|
Max. |
Unit |
||
|
|
|
|
|
|
|
|
|
|
|
|
||
C |
|
Junction |
|
Tj = 25°C |
VR = 1 V F = 1 MHz |
|
|
|
|
10 |
pF |
||
|
|
capacitance |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
trr |
|
Reverse recovery |
|
IF = 10 mA |
IR = 10 mA Tj = 25°C |
|
|
|
|
5 |
ns |
||
|
|
time |
|
Irr = 1 mA |
RL = 100 Ω |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Fig.1 : Average forward power dissipation versus |
Fig.2 : Average forward current versus ambient |
||||||||||||
average forward current. |
|
|
|
temperature ( δ |
= 1). |
|
|
|
|
||||
PF(av)(W) |
|
|
|
|
|
IF(av)(A) |
|
|
|
|
|
||
0.35 |
|
δ = 0.1 |
|
|
|
|
0.35 |
|
|
|
|
|
|
|
|
δ = 0.2 |
δ = 0.5 |
|
|
0.30 |
|
|
|
|
|
|
|
0.30 |
δ = 0.05 |
|
|
|
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|||
0.25 |
|
|
|
|
|
|
0.25 |
|
|
|
|
|
|
0.20 |
|
|
|
|
δ = 1 |
|
0.20 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
||
0.15 |
|
|
|
|
|
|
0.15 |
|
|
|
|
|
|
0.10 |
|
|
|
|
T |
|
0.10 |
T |
|
|
|
|
|
0.05 |
|
|
IF(av) (A) |
|
|
0.05 |
|
|
Tamb(°C) |
|
|
|
|
0.00 |
|
|
δ=tp/T |
tp |
δ=tp/T |
tp |
|
|
|
|
|||
0.05 |
0.10 |
0.15 |
0.20 |
0.25 |
0.30 |
0.00 |
25 |
50 |
75 |
100 |
125 |
150 |
|
0.00 |
0 |
||||||||||||
2/5 |
|
|
|
|
|
|
|
|
|
|
|
|
|