SGS Thomson Microelectronics BTB16-800B, BTB16-700B, BTB16-600B, BTB16-400B, BTA16-800B Datasheet

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SGS Thomson Microelectronics BTB16-800B, BTB16-700B, BTB16-600B, BTB16-400B, BTA16-800B Datasheet

BTA16 B

BTB16 B

STANDARD TRIACS

.FEATURES

.HIGH SURGE CURRENT CAPABILITY

.COMMUTATION : (dV/dt)c > 10V/μs

BTA Family :

INSULATING VOLTAGE = 2500V(RMS)

(UL RECOGNIZED : E81734)

DESCRIPTION

The BTA/BTB16 B triac family are high performance glass passivated PNPN devices.

These parts are suitables for general purpose applications where high surge current capability is required. Application such as phase control and static switching on inductive or resistive load.

ABSOLUTE RATINGS (limiting values)

A1

A2 G

TO220AB

(Plastic)

Symbol

IT(RMS)

ITSM

I2t

dI/dt

 

Parameter

 

Value

Unit

RMS on-state current

BTA

Tc = 80 °C

16

A

(360° conduction angle)

BTB

Tc = 90 °C

 

 

 

 

 

Non repetitive surge peak on-state current

tp = 8.3 ms

170

A

( Tj initial = 25°C )

 

tp = 10 ms

160

 

 

 

 

I2t value

 

tp = 10 ms

128

A2s

Critical rate of rise of on-state current

Repetitive

10

A/μs

Gate supply : IG = 500mA

diG/dt = 1A/μs

F = 50 Hz

 

 

 

 

 

Non

 

 

50

 

 

 

Repetitive

 

 

 

 

Tstg

Storage and operating junction temperature range

 

-

40

to + 150

°C

Tj

 

 

 

-

40

to + 125

°C

Tl

Maximum lead temperature for soldering during 10 s at

4.5 mm

 

 

260

°C

 

from case

 

 

 

 

 

 

Symbol

Parameter

 

BTA / BTB16-... B

 

Unit

 

 

400

600

700

800

 

VDRM

Repetitive peak off-state voltage

400

600

700

800

V

VRRM

Tj = 125 °C

 

 

 

 

 

 

March 1995

1/5

BTA16 B / BTB16 B

THERMAL RESISTANCES

Symbol

Parameter

 

Value

Unit

Rth (j-a)

Junction to ambient

 

60

°C/W

Rth (j-c) DC

Junction to case for DC

BTA

2.9

°C/W

 

 

BTB

2.3

 

Rth (j-c) AC

Junction to case for 360° conduction angle

BTA

2.2

°C/W

 

( F= 50 Hz)

 

 

 

 

 

BTB

1.75

 

GATE CHARACTERISTICS (maximum values)

PG (AV) = 1W

PGM = 10W (tp = 20 μs) IGM = 4A (tp = 20 μs)

VGM = 16V (tp = 20 μs).

 

 

ELECTRICAL CHARACTERISTICS

 

 

 

 

 

Symbol

 

 

Test Conditions

 

Quadrant

 

Suffix

Unit

 

 

 

 

 

 

 

 

B

 

IGT

 

VD=12V

 

(DC) RL=33Ω

Tj=25°C

I-II-III

MAX

50

mA

 

 

 

 

 

 

IV

MAX

100

 

VGT

 

VD=12V

 

(DC) RL=33Ω

Tj=25°C

I-II-III-IV

MAX

1.5

V

VGD

 

VD=VDRM RL=3.3kΩ

Tj=125°C

I-II-III-IV

MIN

0.2

V

tgt

 

VD=VDRM

IG = 500mA

Tj=25°C

I-II-III-IV

TYP

2

μs

 

 

dIG/dt = 3A/μs

 

 

 

 

 

IL

 

IG=1.2 IGT

 

Tj=25°C

I-III-IV

TYP

40

mA

 

 

 

 

 

 

II

 

70

 

IH *

 

IT= 500mA

gate open

Tj=25°C

 

MAX

50

mA

VTM

*

ITM= 22.5A tp= 380μs

Tj=25°C

 

MAX

1.6

V

IDRM

VDRM

Rated

Tj=25°C

 

MAX

0.01

mA

IRRM

VRRM

Rated

Tj=125°C

 

MAX

2

 

 

 

 

 

 

 

 

dV/dt

*

Linear slope up to VD=67%VDRM

Tj=125°C

 

MIN

250

V/μs

 

 

gate open

 

 

 

 

 

 

(dV/dt)c

*

(dI/dt)c = 7A/ms

Tj=125°C

 

MIN

10

V/μs

* For either polarity of electrode A2 voltage with reference to electrode A1.

2/5

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