MA5114
2/12
Symbol Parameter Min. Max. Units
V
CC
Supply Voltage -0.5 7 V
V
I
Input Voltage -0.3 V
DD
+0.3 V
T
A
Operating Temperature -55 125 °C
T
S
Storage Temperature -65 150 °C
Figure 3: Absolute Maximum Ratings
Stresses above those listed may cause permanent
damage to the device. This is a stress rating only and
functlonal operation of the device at these condltions,
or at any other condition above those indicated in the
operations section of this specification, is not Implied
Exposure to absolute maxlmum rating conditions for
extended perlods may affect device reliability.
Notes for Tables 4 and 5:
1. Characteristics apply to pre radiation at T
A
= -55°C to +125°C with V
DD
= 5V ±10% and to post 100k Rad(Si) total dose
radiation at T
A
= 25°C with V
DD
= 5V ±10% (characteristics at higher radiation levels available on request).
2. Worst case at T
A
= +125°C, guaranteed but not tested at T
A
= -55°C.
GROUP A SUBGROUPS 1, 2, 3.
Symbol Parameter Conditions Min. Typ. Max. Units
V
DD
Supply voltage - 4.5 5.0 5.5 V
V
lH
Input High Voltage - V
DD
/2 - V
DD
V
V
lL
Input Low Voltage - V
SS
- 0.8 V
V
OH
Output High Voltage I
OH1
= -1mA 2.4 - - V
V
OL
Output Low Voltage I
OL
= 2mA - - 0.4 V
I
LI
Input Leakage Current (note 2) All inputs except CS --±10 µA
I
LO
Output Leakage Current (note 2) Output disabled, V
OUT
= V
SS
or V
DD
--±20 µA
I
PUI
Input Pull-Up Current V
IN
= V
SS
on CS input only - - -100 µA
I
PDI
Input Leakage Current V
IN
= V
SS
on CS input only - - 5 µA
I
DD
Power Supply Current f
RC
= 1MHz, CS = 50% mark:space- 12 16 mA
I
SB1
Selected Supply Current CS = V
SS
-2535mA
I
SB2
Standby Supply Current Chip disabled - 50 3000 µA
Figure 4: Electrical Characteristics
Symbol Parameter Conditions Min. Typ. Max. Units
V
DR
V
CC
for Data Retention CS = V
DR
2.0 - - V
I
DDR
Data Retention Current CS = V
DR
, V
DR
= 2.0V - 30 2000 µA
Figure 5: Data Retention Characteristics
CHARACTERISTICS AND RATINGS