INTEGRATED CIRCUITS
NE56632-XX
Active-LOW system reset with adjustable delay time
Product data |
2002 Mar 25 |
P s
on o s
Philips Semiconductors |
Product data |
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Active-LOW system reset with adjustable delay time |
NE56632-XX |
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DESCRIPTION
The NE56632-XX is a family of Active-LOW, power-on reset that offers precision threshold voltage detection within ±1.5% and super low operating supply current of typically 3.0 μA. It includes a reset delay that is user adjustable with an external capacitor.
Several detection threshold voltages are available at 1.9V , 2.0 V,
2.7 V, 2.8 V, 2.9 V, 3.0 V, 3.1 V, 4.2 V, 4.3 V, 4.4 V, 4.5 V, and 4.6 V.
Other thresholds are offered upon request at 100 mV steps from 1.9 V to 4.6 V.
With its ultra low supply current and high precision voltage threshold detection capability, the NE56632-XX is well suited for various battery powered applications such as reset circuits for logic and microprocessors, voltage check, and level detecting. It is available in the SOT23-5 package.
FEATURES |
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APPLICATIONS |
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•High precision threshold detection voltage: VS ±1.5% |
•Reset for microprocessor and logic circuits |
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•Super low operating supply current: 3 μA typ. |
•Voltage level detection circuit |
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•Built-in hysteresis voltage: |
50 mV typ. |
•Battery voltage check circuit |
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•Detection threshold voltage: |
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1.9 V, 2.0 V, 2.7 V, 2.8 V, 2.9 V, |
•Detection circuit for battery back-up |
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3.0 V, 3.1 V, 4.2 V, 4.3 V, 4.4 V, 4.5 V, and 4.6 V. |
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•Reset Output: Active-LOW, open collector |
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•Other detection threshold voltages available upon request at |
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100 mV steps from 1.9 V to 4.6 V. |
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•Large low reset output current: 30 mA typ. |
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•Power-on reset delay time adjustable with external capacitor: |
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200 μs to 200 ms |
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•Reset assertion with VCC down to 0.65 V |
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SIMPLIFIED SYSTEM DIAGRAM |
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TO VCC |
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TO RESET |
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RPU |
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TERMINAL |
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OF CPU |
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NE56632-XX |
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CD |
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SL01605
Figure 1. Simplified system diagram.
2002 Mar 25 |
2 |
853±2329 27919 |
Philips Semiconductors |
Product data |
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Active-LOW system reset with adjustable delay time |
NE56632-XX |
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ORDERING INFORMATION
TYPE NUMBER |
PACKAGE |
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TEMPERATURE |
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NAME |
DESCRIPTION |
RANGE |
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NE56632-XXD |
SOT23-5 / SOT25 (SO5) |
plastic small outline package; 5 leads (see dimensional drawing) |
±20 to +75 °C |
NOTE:
The device has 12 voltage output options, indicated by the XX on the `Type number'.
XX |
VOLTAGE (Typical) |
191.9 V
202.0 V
272.7 V
282.8 V
292.9 V
303.0 V
313.1 V
424.2 V
434.3 V
444.4 V
454.5 V
464.6 V
PIN CONFIGURATION
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TC |
1 |
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5 |
VCC |
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NE56632-XX |
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SUB |
2 |
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GND |
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VOUT |
3 |
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4 |
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SL01604
Figure 2. Pin configuration.
MAXIMUM RATINGS
Part number marking
The package is marked with a four letter code. The first three letters designate the product. The fourth letter, represented by `x', is a date tracking code.
Part Number |
Marking |
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NE56632-19D |
AKZx |
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NE56632-20D |
ALAx |
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NE56632-27D |
ALBx |
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NE56632-28D |
ALCx |
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NE56632-29D |
ALDx |
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NE56632-30D |
ALEx |
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NE56632-31D |
ALFx |
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NE56632-42D |
ALGx |
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NE56632-43D |
ALHx |
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NE56632-44D |
ALJx |
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NE56632-45D |
ALKx |
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NE56632-46D |
ALLx |
PIN DESCRIPTION
PIN |
SYMBOL |
DESCRIPTION |
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1 |
TC |
Delay time control; set with external |
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capacitor. |
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SUB |
Substrate. Connect to ground (GND). |
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3 |
GND |
Ground. Negative supply. |
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4 |
VOUT |
Reset output voltage. Active-LOW. |
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VCC |
Positive supply voltage; detection threshold |
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voltage input. |
SYMBOL |
PARAMETER |
MIN. |
MAX. |
UNIT |
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VCC |
Supply voltage |
±0.3 |
+10 |
V |
Tamb |
Ambient operating temperature |
±20 |
+75 |
°C |
Tstg |
Storage temperature |
±40 |
+125 |
°C |
P |
Power dissipation |
± |
150 |
mW |
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2002 Mar 25 |
3 |
Philips Semiconductors |
Product data |
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Active-LOW system reset with adjustable delay time |
NE56632-XX |
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ELECTRICAL CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
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-XX |
MIN. |
TYP. |
MAX. |
UNIT |
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VS |
Detection threshold |
VCC = HIGH-to-LOW; RL = 4.7 kΩ; S1=ON; |
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46 |
4.531 |
4.600 |
4.669 |
V |
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VOL ≤ 0.4 V; |
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45 |
4.432 |
4.500 |
4.568 |
V |
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Test Circuit 1 (Figure 27) |
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44 |
4.334 |
4.400 |
4.466 |
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43 |
4.235 |
4.300 |
4.365 |
V |
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42 |
4.137 |
4.200 |
4.263 |
V |
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31 |
3.053 |
3.100 |
3.147 |
V |
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30 |
2.955 |
3.000 |
3.045 |
V |
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29 |
2.856 |
2.900 |
2.944 |
V |
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28 |
2.758 |
2.800 |
2.842 |
V |
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27 |
2.659 |
2.700 |
2.741 |
V |
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20 |
1.970 |
2.000 |
2.030 |
V |
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19 |
1.871 |
1.900 |
1.929 |
V |
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Vhys |
Hysteresis voltage |
RL = 4.7 kΩ; VCC = LOW-to-HIGH-to-LOW; S1 = ON; Test |
25 |
50 |
100 |
mV |
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Circuit 1 (Figure 27) |
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VS/ T |
Detection threshold voltage |
RL = 4.7 kΩ; Tamb = ±20 °C to +75 °C; S1 = ON; |
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±0.01 |
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%/°C |
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temperature coefficient |
Test Circuit 1 (Figure 27) |
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VOL |
LOW-level output voltage |
VCC1 = VS(min) ± 0.05 V; RL = 4.7 kΩ; S1 = ON; |
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0.2 |
0.4 |
V |
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Test Circuit 1 (Figure 27) |
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ILO |
Output leakage current |
VCC1 = VCC2 = 10 V; S2 = ON; Test Circuit 1 (Figure 27) |
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±0.1 |
μA |
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ICCL |
Supply current (ON time) |
VCC1 = VS(min) ± 0.05 V; RL = ∞ ; Test Circuit 1 (Figure 27) |
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5.0 |
9.0 |
μA |
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ICCH |
Supply current (OFF time) |
VCC1 = VS(typ)/0.85; RL = ∞ ; Test Circuit 1 (Figure 27) |
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3.0 |
5.0 |
μA |
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tPLH |
LOW-to-HIGH delay time |
CL = 100 pF; RL = 4.7 kΩ; CD = 10 nF (Note 1) |
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(Note 3) |
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tPHL |
HIGH-to-LOW delay time |
CL = 100 pF; RL = 4.7 kΩ; CD = 10 nF (Note 2) |
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(Note 3) |
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μs |
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VOPL |
Minimum operating |
RL = 4.7 kΩ; VOL ≤ 0.4 V; S1 = ON; |
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0.65 |
0.80 |
V |
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threshold voltage |
Test Circuit 1 (Figure 27) |
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IOL1 |
Output current (ON Time 1) |
VO = 0.4 V; RL = 0; VCC1 = VS(min) ± 0.05 V; |
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mA |
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VCC2 = 0.4 V; S2 = ON; Test Circuit 1 (Figure 27) |
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IOL2 |
Output current (ON Time 2) |
VO = 0.4 V; RL = 0; VCC1 |
= VS(min) ± 0.05 V; |
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mA |
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Tamb = ±20 °C to +75 |
°C; S2 = ON; |
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Test Circuit 1 (Figure 27) |
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NOTES:
1.tPLH: VCC = (VS(typ) ± 0.4 V) to (VS(typ) + 0.4 V); tPLH is release delay time (Test Circuit 2, Figure 28).
2.tPHL: VCC = (VS(typ) + 0.4 V) to (VS(typ) ± 0.4 V); tPHL is assertion delay time (Test Circuit 2, Figure 28).
3.See Table 1.
Table 1. NE56632-XX series typical delay time
±XX |
tPLH |
tPHL |
46 |
195 ms |
140 μs |
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45 |
190 ms |
140 μs |
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44 |
185 ms |
140 μs |
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43 |
180 ms |
140 μs |
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42 |
175 ms |
140 μs |
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31 |
120 ms |
120 μs |
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30 |
115 ms |
120 μs |
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29 |
110 ms |
120 μs |
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28 |
105 ms |
100 μs |
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27 |
100 ms |
100 μs |
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20 |
65 ms |
100 μs |
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19 |
60 ms |
100 μs |
2002 Mar 25 |
4 |
Philips Semiconductors |
Product data |
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Active-LOW system reset with adjustable delay time |
NE56632-XX |
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TYPICAL PERFORMANCE CURVES, NE56632-20
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2.0050 |
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(V) |
2.0025 |
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THRESHOLD |
2.0000 |
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1.9975 |
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1.9950 |
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DETECTION |
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1.9925 |
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1.9900 |
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Test Circuit 1 |
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VCC = HIGH-to-LOW |
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S |
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V |
1.9875 |
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RL = 4.7 kΩ |
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VOL ≤ 0.4 V |
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1.9850 |
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S1 = ON |
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±40 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
AMBIENT TEMPERATURE, Tamb (°C)
SL01620
Figure 3. Detection threshold versus temperature.
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0.225 |
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(V) |
0.220 |
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VOLTAGE |
0.215 |
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0.210 |
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OUTPUT |
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0.205 |
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LEVEL |
0.200 |
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0.195 |
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, LOW- |
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Test Circuit 1 |
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0.190 |
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VCC1 = VS(min) ± 0.05 V |
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OL |
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RL = 4.7 kΩ |
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V |
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S1 = ON |
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0.185 |
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±40 |
±20 |
0 |
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40 |
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80 |
100 |
AMBIENT TEMPERATURE, Tamb (°C)
SL01622
Figure 5. LOW-level output voltage versus temperature.
μA) |
4.5 |
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(OFF time), |
4.0 |
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CURRENT |
3.5 |
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3.0 |
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, SUPPLY |
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2.5 |
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CCH |
Test Circuit 1 |
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RL = ∞ |
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VCC1 = VS(typ)/0.85 |
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2.0 |
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±40 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
AMBIENT TEMPERATURE, Tamb (°C)
SL01624
Figure 7. Supply current (OFF time) versus temperature.
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(mV) |
90 |
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VOLTAGE |
80 |
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70 |
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HYSTERESIS |
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60 |
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50 |
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Test Circuit 1 |
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hys |
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VCC = LOW-to-HIGH-to-LOW |
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V |
40 |
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RL = 4.7 kΩ |
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S1 = ON |
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30 |
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±40 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
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AMBIENT TEMPERATURE, Tamb (°C) |
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SL01621 |
Figure 4. Hysteresis voltage versus temperature.
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(μA) |
8 |
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(ON time), |
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7 |
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CURRENT |
6 |
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, SUPPLY |
5 |
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4 |
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CCL |
Test Circuit 1 |
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VCC1 |
= VS(min) ± 0.05 V |
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I |
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3 |
RL = ∞ |
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±40 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
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AMBIENT TEMPERATURE, Tamb (°C) |
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SL01623 |
Figure 6. Supply current (ON time) versus temperature.
(V) |
0.9 |
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VOLTAGE |
0.8 |
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THRESHOLD |
0.7 |
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0.6 |
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OPERATING |
0.5 |
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0.4 |
Test Circuit 1 |
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RL = 4.7 kΩ |
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, MIN. |
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VOL ≤ 0.4 V |
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S1 = ON |
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OPL |
0.3 |
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±40 |
±20 |
0 |
20 |
40 |
60 |
80 |
100 |
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V |
AMBIENT TEMPERATURE, Tamb (°C)
SL01625
Figure 8. Min. operating threshold voltage versus temperature.
2002 Mar 25 |
5 |