Philips NE5532AN, NE5532N, NE5532D8, NE5532D, NE5532NB Datasheet

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INTEGRATED CIRCUITS

NE/SA/SE5532/5532A

Internally-compensated dual low noise operational amplifier

Product specification

1997 Sept 29

IC11 Data Handbook

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Philips Semiconductors

Product specification

 

 

 

 

 

 

Internally-compensated dual low noise

NE/SA/SE5532/5532A

operational amplifier

DESCRIPTION

PIN CONFIGURATIONS

The 5532 is a dual high-performance low noise operational amplifier. Compared to most of the standard operational amplifiers, such as the 1458, it shows better noise performance, improved output drive capability and considerably higher small-signal and power bandwidths.

This makes the device especially suitable for application in high-quality and professional audio equipment, instrumentation and control circuits, and telephone channel amplifiers. The op amp is internally compensated for gains equal to one. If very low noise is of prime importance, it is recommended that the 5532A version be used because it has guaranteed noise voltage specifications.

FEATURES

Small-signal bandwidth: 10MHz

Output drive capability: 600Ω, 10VRMS

Input noise voltage: 5nV Hz (typical)

DC voltage gain: 50000

AC voltage gain: 2200 at 10kHz

Power bandwidth: 140kHz

Slew rate: 9V/μs

Large supply voltage range: ±3 to ±20V

Compensated for unity gain

FE, N, D8 Packages

 

OUTPUT A

1

8

V+

INVERTING INPUT A

2

7

OUTPUT B

 

A

B

 

NON-INVERTING INPUT A

3

6

INVERTING INPUT B

V-

4

5

NON-INVERTING INPUT B

TOP VIEW

 

 

D Package1

 

±INA

1

16

NC

+INA

2

15

NC

NC

3

14

NC

±VCC

4

13

OUTA

NC

5

12

+VCC

 

 

 

NC

6

11

OUTB

+INB

7

10

NC

 

 

 

±INB

8

9

NC

TOP VIEW

NOTE:

1. SOL and non-standard pinout.

SL00332

 

Figure 1. Pin Configurations

ORDERING INFORMATION

DESCRIPTION

TEMPERATURE RANGE

ORDER CODE

DWG #

 

 

 

 

8-Pin Plastic Dual In-Line Package (DIP)

0 to 70°C

NE5532N

SOT97-1

 

 

 

 

8-Pin Plastic Dual In-Line Package (DIP)

±40°C to +85°C

SA5532N

SOT97-1

 

 

 

 

8-Pin Plastic Dual In-Line Package (DIP)

±40°C to +85°C

SA5532AN

SOT97-1

 

 

 

 

8-Pin Ceramic Dual In-Line Package (CERDIP)

0 to 70°C

NE5532FE

0580A

 

 

 

 

8-Pin Plastic Dual In-Line Package (DIP)

0 to 70°C

NE5532AN

SOT97-1

 

 

 

 

8-Pin Ceramic Dual In-Line Package (CERDIP)

0 to 70°C

NE5532AF

0580A

 

 

 

 

8-Pin Ceramic Dual In-Line Package (CERDIP)

-55°C to +125°C

SE5532FE

0580A

 

 

 

 

8-Pin Ceramic Dual In-Line Package (CERDIP)

-55°C to +125°C

SE5532AF

0580A

 

 

 

 

8-Pin Small Outline Package (SO)

0 to 70°C

NE5532AD8

SOT96-1

 

 

 

 

8-Pin Small Outline Package (SO)

±40°C to 85°C

SA5532D8

SOT96-1

 

 

 

 

8-Pin Small Outline Package (SO)

±40°C to 85°C

SA5532AD8

SOT96-1

 

 

 

 

8-Pin Small Outline Package (SO)

-55°C to +125°C

SE5532AD8

SOT96-1

 

 

 

 

8-Pin Small Outline Package (SO)

0 to 70°C

NE5532D8

SOT96-1

 

 

 

 

8-Pin Small Outline Package (SO)

±40°C to 85°C

SA5532D8

SOT96-1

 

 

 

 

8-Pin Small Outline Package (SO)

±40°C to 85°C

SA5532AD8

SOT96-1

 

 

 

 

8-Pin Small Outline Package (SO)

-55°C to +125°C

SE5532D8

SOT96-1

 

 

 

 

16-Pin Plastic Small Outline Large (SOL) Package

0 to 70°C

NE5532D

SOT162-1

 

 

 

 

16-Pin Plastic Dual In-Line Package (DIP)

-55°C to +125°C

SE5532N

SOT38-4

 

 

 

 

1997 Sept 29

2

853-0949 16639

Philips NE5532AN, NE5532N, NE5532D8, NE5532D, NE5532NB Datasheet

Philips Semiconductors

Product specification

 

 

 

Internally-compensated dual low noise

NE/SA/SE5532/5532A

operational amplifier

EQUIVALENT SCHEMATIC (EACH AMPLIFIER)

+

_

SL00333

Figure 2. Equivalent Schematic (Each Amplifier)

ABSOLUTE MAXIMUM RATINGS

SYMBOL

 

PARAMETER

RATING

UNIT

 

 

 

 

VS

Supply voltage

±22

V

VIN

Input voltage

±VSUPPLY

V

VDIFF

Differential input voltage1

±0.5

V

TA

Operating temperature range

 

°C

 

SA5532/A

±40 to +85

 

NE5532/A

0 to 70

°C

 

SE5532/A

-55 to +125

°C

 

 

 

 

TSTG

Storage temperature

-65 to +150

°C

TJ

Junction temperature

150

°C

PD

Maximum power dissipation,

 

 

 

T =25°C (still-air)2

 

 

 

A

 

 

 

 

8

D8 package

780

mW

 

8

N package

1200

mW

 

8

FE package

1000

mW

 

16

D package

1200

mW

 

 

 

 

TSOLD

Lead soldering temperature (10sec max)

300

°C

NOTES:

1.Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential input voltage exceeds 0.6V. Maximum current should be limited to ±10mA.

2.Thermal resistances of the above packages are as follows:

N package at 100°C/W

F package at 135°C/W

D package at 105°C/W

D8 package at 160°C/W

1997 Sept 29

3

Philips Semiconductors

Product specification

 

 

 

Internally-compensated dual low noise

NE/SA/SE5532/5532A

operational amplifier

DC ELECTRICAL CHARACTERISTICS

T =25°C V

=±15V, unless otherwise specified. 1, 2, 3

 

 

 

 

 

 

 

 

A

S

 

 

 

 

 

 

 

 

 

 

SYMBOL

 

PARAMETER

TEST CONDITIONS

SE/5532/5532A

NE/SA/5532/5532A

UNIT

 

 

 

 

 

 

 

 

Min

Typ

Max

Min

Typ

Max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VOS

 

 

Offset voltage

 

 

0.5

2

 

0.5

4

mV

 

 

 

 

Over temperature

 

 

3

 

 

5

mV

VOS/

T

 

 

 

 

5

 

 

5

 

μV/°C

IOS

 

 

Offset current

 

 

 

100

 

10

150

nA

 

 

 

 

Over temperature

 

 

200

 

 

200

nA

IOS/

T

 

 

 

 

200

 

 

200

 

pA/°C

IB

 

 

Input current

 

 

200

400

 

200

800

nA

 

 

 

 

Over temperature

 

 

700

 

 

1000

nA

IB/ T

 

 

 

 

 

5

 

 

5

 

nA/°C

 

 

 

 

 

 

8

10.5

 

8

16

mA

ICC

 

 

Supply current

 

 

 

 

 

 

 

 

 

 

 

 

Over temperature

 

 

13

 

 

 

mA

 

 

 

 

 

 

 

 

 

 

 

 

VCM

 

 

Common-mode input range

 

±12

±13

 

±12

±13

 

V

CMRR

 

Common-mode rejection ratio

 

80

100

 

70

100

 

dB

 

 

 

 

 

 

 

 

 

 

 

 

PSRR

 

 

Power supply rejection ratio

 

 

10

50

 

10

100

μV/V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL2kΩ, VO=±10V

50

100

 

25

100

 

V/mV

AVOL

 

 

Large-signal voltage gain

Over temperature

25

 

 

15

 

 

V/mV

 

 

RL600Ω, VO=±10V

40

50

 

15

50

 

V/mV

 

 

 

 

 

 

 

 

 

 

Over temperature

20

 

 

10

 

 

V/mV

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RL600Ω

±12

±13

 

±12

±13

 

 

 

 

 

 

Over temperature

±10

±12

 

±10

±12

 

 

VOUT

 

 

Output swing

RL600Ω, VS=±18V

±15

±16

 

±15

±16

 

V

 

 

Over temperature

±12

±14

 

±12

±14

 

 

 

 

 

 

 

 

 

 

 

 

RL2kΩ

±13

±13.5

 

±13

±13.5

 

 

 

 

 

 

Over temperature

±12

±12.5

 

±10

±12.5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

RIN

 

 

Input resistance

 

30

300

 

30

300

 

kΩ

ISC

 

 

Output short circuit current

 

10

38

60

10

38

60

mA

NOTES:

1.Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential input voltage exceeds 0.6V. Maximum current should be limited to ±10mA.

2.For operation at elevated temperature, derate packages based on the package thermal resistance.

3.Output may be shorted to ground at VS=±15V, TA=25°C Temperature and/or supply voltages must be limited to ensure dissipation rating is not exceeded.

AC ELECTRICAL CHARACTERISTICS

TA=25°C VS=±15V, unless otherwise specified.

SYMBOL

PARAMETER

TEST CONDITIONS

NE/SA/SE5532/5532A

UNIT

 

 

 

Min

Typ

Max

 

 

 

 

 

 

 

 

 

 

 

ROUT

Output resistance

AV=30dB Closed-loop

 

0.3

 

Ω

f=10kHz, RL=600Ω

 

 

 

 

 

 

 

 

 

 

Voltage-follower

 

 

 

 

 

Overshoot

VIN=100mVP-P

 

10

 

%

 

 

CL=100pF, RL=600Ω

 

 

 

 

AV

Gain

f=10kHz

 

2.2

 

V/mV

GBW

Gain bandwidth product

CL=100pF, RL=600Ω

 

10

 

MHz

SR

Slew rate

 

 

9

 

V/μs

 

 

 

 

 

 

 

 

 

VOUT=±10V

 

140

 

kHz

 

Power bandwidth

VOUT=±14V, RL=600Ω,

 

100

 

kHz

 

 

VCC=±18V

 

 

 

 

1997 Sept 29

4

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