Philips Semiconductors RF Communications Products |
Product specification |
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High frequency operational amplifier |
NE/SE5539 |
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DESCRIPTION
The NE/SE5539 is a very wide bandwidth, high slew rate, monolithic operational amplifier for use in video amplifiers, RF amplifiers, and extremely high slew rate amplifiers.
Emitter-follower inputs provide a true differential input impedance device. Proper external compensation will allow design operation over a wide range of closed-loop gains, both inverting and non-inverting, to meet specific design requirements.
FEATURES
•Bandwidth
±Unity gain - 350MHz
±Full power - 48MHz
±GBW - 1.2GHz at 17dB
•Slew rate: 600/Vμs
•AVOL: 52dB typical
•Low noise - 4nV√ Hz typical
•MIL-STD processing available
APPLICATIONS
•High speed datacom
•Video monitors & TV
PIN CONFIGURATION
D, F, N Packages
+ INPUT |
1 |
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14 |
- INPUT |
NC |
2 |
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± |
13 |
NC |
-VSUPPLY |
3 |
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12 |
FREQUENCY |
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COMPENS. |
NC |
4 |
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11 |
NC |
VOSADJ |
5 |
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10 |
+V |
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AV ADJNC |
6 |
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9 |
NC |
GROUND |
7 |
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8 |
OUTPUT |
Top View
•Satellite communications
•Image processing
•RF instrumentation & oscillators
•Magnetic storage
•Military communications
ORDERING INFORMATION
DESCRIPTION |
TEMPERATURE RANGE |
ORDER CODE |
DWG # |
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14-Pin Plastic Dual In-Line Package (DIP) |
0 to +70°C |
NE5539N |
0405B |
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14-Pin Plastic Small Outline (SO) package |
0 to +70°C |
NE5539D |
0175D |
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14-Pin Ceramic Dual In-Line Package |
0 to +70°C |
NE5539F |
0581B |
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14-Pin Ceramic Dual In-Line Package |
-55 to +125°C |
SE5539F |
0581B |
ABSOLUTE MAXIMUM RATINGS1
SYMBOL |
PARAMETER |
RATING |
UNITS |
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VCC |
Supply voltage |
±12 |
V |
PDMAX |
Maximum power dissipation, |
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T = 25°C (still-air)2 |
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A |
1.17 |
W |
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F package |
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N package |
1.45 |
W |
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D package |
0.99 |
W |
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Operating temperature range |
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T |
NE |
0 to 70 |
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A |
SE |
-55 to +125 |
C |
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°C |
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TSTG |
Storage temperature range |
-65 to +150 |
°C |
TJ |
Max junction temperature |
150 |
°C |
TSOLD |
Lead soldering temperature (10sec max) |
+300 |
°C |
NOTES:
1.Differential input voltage should not exceed 0.25V to prevent excesive input bias current and common-mode voltage 2.5V. These voltage limits may be exceeded if current is limited to less than 10mA.
2.Derate above 25°C, at the following rates:
F package at 9.3mW/°C
N package at 11.6mW/°C
D package at 7.9mW/°C
April 15, 1992 |
229 |
853-0814 06456 |
Philips Semiconductors RF Communications Products |
Product specification |
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High frequency operational amplifier |
NE/SE5539 |
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EQUIVALENT CIRCUIT
(12) FREQUENCY COMP.
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(10) +VCC |
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R18 |
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R19 |
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R3 |
R5 |
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(±) 14 |
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INVERTING INPUT |
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R2 |
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Q6 |
R8 |
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(+) 1 |
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Q1 |
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R6 |
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NON±INVERTING |
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Q4 |
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INPUT |
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Q5 |
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Q2 |
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Q3 |
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Q7 |
Q8 |
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R21 |
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R20 |
R1 |
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R4 |
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(8) OUTPUT |
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R9 |
R10 |
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2.2k |
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(7) GRD |
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R13 |
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Q9 |
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Q10 |
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R11 |
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Q11 |
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R7 |
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R15 |
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R12 |
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R14 |
R |
16 |
R |
17 |
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(3) ±VCC |
5 |
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DC ELECTRICAL CHARACTERISTICS
VCC = ±8V, TA = 25°C; unless otherwise specified.
SYMBOL |
PARAMETER |
TEST CONDITIONS |
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SE5539 |
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NE5539 |
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UNITS |
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MIN |
TYP |
MAX |
MIN |
TYP |
MAX |
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VOS |
Input offset voltage |
VO = 0V, RS = 100Ω |
Over temp |
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2 |
5 |
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mV |
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TA = 25°C |
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3 |
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2.5 |
5 |
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VOS/ T |
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5 |
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5 |
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μV/°C |
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IOS |
Input offset current |
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Over temp |
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0.1 |
3 |
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μA |
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TA = 25°C |
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0.1 |
1 |
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2 |
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IOS/ T |
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0.5 |
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0.5 |
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nA/°C |
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IB |
Input bias current |
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Over temp |
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6 |
25 |
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μA |
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TA = 25°C |
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5 |
13 |
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5 |
20 |
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IB/ T |
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10 |
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10 |
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nA/°C |
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CMRR |
Common mode rejection ratio |
F = 1kHz, RS = 100Ω |
, VCM ±1.7V |
70 |
80 |
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70 |
80 |
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dB |
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Over temp |
70 |
80 |
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RIN |
Input impedance |
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100 |
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100 |
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kΩ |
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ROUT |
Output impedance |
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10 |
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10 |
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Ω |
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April 15, 1992 |
230 |
Philips Semiconductors RF Communications Products |
Product specification |
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High frequency operational amplifier |
NE/SE5539 |
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DC ELECTRICAL CHARACTERISTICS (Continued)
VCC = ±8V, TA = 25°C; unless otherwise specified.
SYMBOL |
PARAMETER |
TEST CONDITIONS |
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SE5539 |
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NE5539 |
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UNITS |
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MIN |
TYP |
MAX |
MIN |
TYP |
MAX |
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VOUT |
Output voltage swing |
RL = 150Ω to GND and |
+Swing |
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+2.3 |
+2.7 |
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470Ω to -VCC |
-Swing |
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-1.7 |
-2.2 |
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RL = 25Ω to GND |
+Swing |
+2.3 |
+3.0 |
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VOUT |
Output voltage swing |
Over temp |
-Swing |
-1.5 |
-2.1 |
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V |
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RL = 25Ω to GND |
+Swing |
+2.5 |
+3.1 |
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TA = 25°C |
-Swing |
-2.0 |
-2.7 |
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ICC+ |
Positive supply current |
VO = 0, R1 = ∞ , Over |
temp |
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14 |
18 |
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mA |
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VO = 0, R1 = ∞ , TA = 25°C |
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14 |
17 |
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14 |
18 |
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ICC- |
Negative supply current |
VO = 0, R1 = ∞ , Over temp |
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11 |
15 |
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mA |
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VO = 0, R1 = ∞ , TA = 25°C |
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11 |
14 |
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11 |
15 |
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PSRR |
Power supply rejection ratio |
VCC = ±1V, Over temp |
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300 |
1000 |
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μV/V |
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VCC = ±1V, TA = 25°C |
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200 |
1000 |
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AVOL |
Large signal voltage gain |
VO = +2.3V, -1.7V, RL = 150Ω to |
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47 |
52 |
57 |
dB |
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GND, 470Ω to -VCC |
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VO = +2.3V, -1.7V |
Over |
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AVOL |
Large signal voltage gain |
temp |
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dB |
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RL = 2Ω to GND |
TA = 25°C |
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47 |
52 |
57 |
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VO = +2.5V, -2.0V |
Over |
46 |
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60 |
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AVOL |
Large signal voltage gain |
temp |
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dB |
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RL = 2Ω to GND |
TA = 25°C |
48 |
53 |
58 |
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DC ELECTRICAL CHARACTERISTICS
VCC = ±6V, TA = 25°C; unless otherwise specified.
SYMBOL |
PARAMETER |
TEST CONDITIONS |
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SE5539 |
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UNITS |
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MIN |
TYP |
MAX |
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VOS |
Input offset voltage |
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Over temp |
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2 |
5 |
mV |
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TA = 25°C |
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2 |
3 |
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IOS |
Input offset current |
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Over temp |
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0.1 |
3 |
μA |
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TA = 25°C |
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0.1 |
1 |
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IB |
Input bias current |
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Over temp |
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5 |
20 |
μA |
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TA = 25°C |
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4 |
10 |
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CMRR |
Common-mode rejection ratio |
VCM = ±1.3V, RS = 100Ω |
70 |
85 |
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dB |
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ICC+ |
Positive supply current |
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Over temp |
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11 |
14 |
mA |
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TA = 25°C |
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11 |
13 |
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ICC- |
Negative supply current |
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Over temp |
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8 |
11 |
mA |
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TA = 25°CmA |
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8 |
10 |
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PSRR |
Power supply rejection ratio |
VCC = ±1V |
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Over temp |
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300 |
1000 |
μV/V |
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TA = 25°C |
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Over |
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+Swing |
+1.4 |
+2.0 |
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RL = 150Ω to GND |
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VOUT |
Output voltage swing |
temp |
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±Swing |
±1.1 |
±1.7 |
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V |
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and 390Ω to ±VCC |
TA = |
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+Swing |
+1.5 |
+2.0 |
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25°C |
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±Swing |
±1.4 |
±1.8 |
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April 15, 1992 |
231 |
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