FEATURES
•Isolation Test Voltage: 2500 VACRMS
•TTL Compatible
•High Bit Rates: 1 Mbit/s
•High Common-Mode Interference Immunity
•Bandwidth 2 MHz
•Open-Collector Output
•External Base Wiring Possible
•Field-Effect Stable by TRIOS*
•Underwriters Lab File #E52744
DESCRIPTION
The 6N135 and 6N136 are optocouplers with a GaAIAs infrared emitting diode, optically coupled with an integrated photodetector which consists of a photodiode and a high-speed transistor in a DIP- 8 plastic package.
Signals can be transmitted between two electrically separated circuits up to frequencies of 2 MHz. The potential difference between the circuits to be coupled is not allowed to exceed the maximum permissible reference voltages.
Maximum Ratings |
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Emitter |
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Reverse Voltage ................................................. |
5 |
V |
Forward Current ............................................ |
25 mA |
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Peak Forward Current |
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(t =1 ms, duty cycle 50%) ............................ |
50 mA |
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Maximum Surge Forward Current |
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(t ≤1 µs, 300 pulses/s)....................................... |
1 A |
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Thermal Resistance................................... |
700 K/W |
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Total Power Dissipation (TA≤70°C) ............... |
45 mW |
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Detector |
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Supply Voltage ..................................... |
–0.5 to 15 |
V |
Output Voltage .................................... |
–0.5 to 15 |
V |
Emitter-Base Voltage ......................................... |
5 |
V |
Output Current................................................. |
8 mA |
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Maximum Output Current.............................. |
16 mA |
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Base Current .................................................. |
5 mA |
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Thermal Resistance................................... |
300 K/W |
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Total Power Dissipation (TA≤70°C) ............. |
100 mW |
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Package
Isolation Test Voltage (between emitter and detector climate per DIN 40046,
part 2, Nov. 74 (t=1min.) ............... |
2500 VACRMS |
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Pollution Degree (DIN VDE 0109) ......................... |
2 |
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Creepage ........................................................... |
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≥7 mm |
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Clearance........................................................... |
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≥7 mm |
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Comparative Tracking Index per |
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DIN IEC112/VDE 0303 part 1, |
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Group IIIa per DIN VDE 6110 ........................ |
175 |
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Isolation Resistance |
≥1012 Ω |
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V |
=500 V, T |
= 25°C ............................... |
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IO |
A |
= 100°C |
≥1011 Ω |
V |
=500 V, T |
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IO |
A |
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–55°C to +125°C |
Storage Temperature Range ....... |
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Ambient Temperature Range ...... |
–55°C to +100°C |
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Soldering Temperature (max. ≤10 sec., |
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dip soldering ≥0.5 mm from |
260°C |
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case bottom).............................................. |
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*TRIOS—TRansparent IOn Shield
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6N135 |
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6N136 |
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HIGH-SPEED 2.5 kV TRIOS |
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OPTOCOUPLER |
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Dimensions in inches (mm) |
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4 |
3 |
2 |
1 |
Pin |
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One |
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I.D. |
NC |
1 |
8 |
Cathode |
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(VCC) |
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.268 (6.81) |
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Anode |
2 |
7 |
Base |
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(VB) |
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.255 (6.48) |
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Cathode |
3 |
6 |
Collector |
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(VO) |
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NC |
4 |
5 |
Emitter |
5 |
6 |
7 |
8 |
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(GND) |
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.390 (9.91) |
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.379 (9.63) |
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.045 (1.14) |
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.305 typ. |
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(7.75) typ. |
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.030 (.76) |
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.150 (3.81) |
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.130 (3.30) |
.135 (3.43) |
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4° |
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.115 (2.92) |
.040 (1.02) |
10° |
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Typ. |
.030 (.76 ) |
Typ. |
.022 (.56) |
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3°–9° .012 (.30) |
.018 (.46) |
.100 (2.54) |
.008 (.20) |
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Typ. |
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Characteristics (T =0 to 70°C unless otherwise specified, T=25°C typ.) |
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A |
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A |
Emitter |
Symbol |
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Unit |
Condition |
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Forward Voltage |
VF |
1.6 (≤1.9) |
V |
IF=16 mA |
Breakdown Voltage |
VBR |
≥5 |
V |
IR=10 µA |
Reverse Current |
IR |
0.5 (≤10) |
µA |
VR=5 V |
Capacitance |
CO |
125 |
pF |
VR=0 V, f=1 MHz |
Temperature Coeffi- |
VF / TA |
-1.7 |
mV/°C |
IF=16 mA |
cient, Forward Voltage |
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Detector |
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Supply Current |
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µA |
IF=16 mA, VO open, |
Logic Low |
ICCL |
150 |
VCC=15 V |
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Supply Current |
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0.01 (≤1) |
µA |
IF=0 mA, VO open, |
Logic High |
ICCH |
VCC=15 V |
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Output Voltage, |
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IF=16 mA, |
Output Low |
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0.1 (≤0.4) |
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VCC=4.5 V |
6N135 |
VOL |
V |
IO=1.1 mA |
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6N136 |
VOL |
0.1 (≤0.4) |
V |
IO=2.4 mA |
Output Current, |
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3 (≤500) |
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Output High |
ICH |
nA |
IF=0 mA, |
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VO=VCC=5.5 V |
Output Current, |
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0.01 (≤1) |
µA |
IF=0 mA |
Output High |
ICH |
VO=VCC=15 V |
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Current Gain |
HFE |
150 |
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VO=5 V, IO=3 mA |
Package |
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Coupling Capacitance |
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Input-Output |
CIO |
0.6 |
pF |
f=1 MHz |
Current Transfer Ratio |
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6N135 |
CTR |
16 (≥7) |
% |
IF=16 mA, VO=0.4 V, |
6N136 |
CTR |
35 (≥19) |
% |
VCC=4.5 V, TA=25°C |
6N135 |
CTR |
≥5 |
% |
IF=16 mA, VO=0.5 V, |
6N136 |
CTR |
≥15 |
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VCC=4.5 V |
5–1 |
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