FAGOR FT1216MH, FT1216DH, FT1216BH, FT1214MH, FT1214DH Datasheet

FT12...H

HIGHCOMMUTATIONTRIAC

MT1

MT2

TO220-AB

On-State Current	Gate Trigger Current
12 Amp	≤ 25 mA to ≤ 50 mA

MT2	Off-State Voltage
	200 V ÷ 600 V

		This series of TRIACs uses a high
		performance PNPN technology.
	G	These parts are intended for general
		purpose AC switching applications with
		highly inductive loads.

AbsoluteMaximumRatings,accordingtoIECpublicationNo.134

SYMBOL	PARAMETER		CONDITIONS				Min.		Max.	Unit
IT(RMS)	RMS On-state Current	Full sine wave, TC = 105 ºC					12			A
ITSM	Non-repetitive On-State Current	Full Cycle, 60 Hz		t = 16.7 ms			125			A
ITSM	Non-repetitive On-State Current	Full Cycle, 50 Hz		t = 20 ms			120			A
I2t	Fusing Current	tp = 10 ms, Half Cycle					80			A2s
IGM	Peak Gate Current	20 µs max.	Tj =125ºC						4	A
PG(AV)	Average Gate Power Dissipation	Tj =125ºC							1	W
di/dt	Critical rate of rise of on-state current	IG = 2x IGT, tr ≤100ns					50			A/µs
		f= 120 Hz, Tj =125ºC
Tj	Operating Temperature						-40		+125	ºC
Tstg	Storage Temperature						-40		+150	ºC
SYMBOL	PARAMETER					VOLTAGE				Unit
					B	D			M
VDRM	Repetitive Peak Off State				200	400			600	V
VRRM	Voltage

Jun - 03

FT12...H

HIGHCOMMUTATIONTRIAC

Electrical Characteristics

SYMBOL	PARAMETER	CONDITIONS			Quadrant		SENSITIVITY			Unit
							11	14	16
IGT (1)	Gate Trigger Current	VD = 12 VDC , RL = 30Ω,		Tj = 25 ºC	Q1÷Q3	MAX	25	35	50	mA
IDRM /IRRM	Off-State Leakage Current	VD = VDRM , RGK = 1KΩ, Tj = 125 ºC				MAX		1		mA
		VR = VRRM ,		Tj = 25 ºC		MAX		5		µA
Vto (2)	Threshold Voltage	Tj = 125 ºC				MAX		0.85		V
Rd(2)	Dynamic Resistance	Tj = 125 ºC				MAX		35		mΩ
VTM (2)	On-state Voltage	IT = 17 Amp, tp = 380 µs, Tj = 25 ºC				MAX		1.55		V
VGT	Gate Trigger Voltage	Ω		Tj = 25 ºC	Q1÷Q3	MAX		1.3		V
		VD = 12 VDC , RL = 30	,
VGD	Gate Non Trigger Voltage	Ω	,	Tj = 125 ºC	Q1÷Q3	MIN		0.2		V
		VD = VDRM , RL = 3.3K
IH (2)	Holding Current	IT = 100 mA , Gate open,		Tj = 25 ºC		MAX	25	35	50	mA
IL	Latching Current	IG = 1.2 IGT, Tj = 25 ºC			Q1,Q3	MAX	40	50	70	mA
					Q2	MAX	50	60	80
dv / dt (2)	Critical Rate of Voltage Rise	VD = 0.67 x VDRM , Gate open				MIN	200	500	1000	V/µs
		Tj = 125 ºC
(dI/dt)c (2)	Critical Rate of Current Rise	(dv/dt)c= 0.1 V/µs		Tj = 125 ºC		MIN	-	-	-	A/ms
		(dv/dt)c= 10 V/µs		Tj = 125 ºC		MIN	-	-	-
		without snubber		Tj = 125 ºC		MIN	5.3	6.5	12
Rth(j-c)	Thermal Resistance	for AC 360º conduction angle						1.4		ºC/W
	Junction-Case
Rth(j-a)	Thermal Resistance							60		ºC/W
	Junction-Ambient

(1)Minimum IGT is guaranted at 5% of IGT max.

(2)For either polarity of electrode MT2 voltage with reference to electrode MT1.

PARTNUMBERINFORMATION

F T 12

14 B H 00 TU

FAGOR

PACKAGING

TRIAC

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Jun - 03