FAGOR FS0204DB, FS0204DA, FS0204BB, FS0204BA, FS0203NA Datasheet

FS02...A/B

SENSITIVEGATESCR

TO92	RD26
(Plastic)	(Plastic)

K A

G A G K

FS02...A

FS02...B

On-State Current	Gate Trigger Current
1.25 Amp	< 200 µA

Off-State Voltage

200 V ÷ 800 V

These series of Silicon Controlled R ectifier use a high performance PNPN technology.

These parts are intended for general purpose applications where high gate sensitivity is required.

AbsoluteMaximumRatings,accordingtoIECpublicationNo.134

SYMBOL

PARAMETER

CONDITIONS

Min.

Max.

Unit

IT(RMS)

On-state Current

All Conduction Angle, TL = 60 ºC

1.25

A

IT(AV)

Average On-state Current

Half Cycle, Θ = 180 º, TL = 60 ºC

0.8

A

ITSM

Non-repetitive On-State Current

Half Cycle, 60 Hz, Tj = 25 ºC

25

A

ITSM

Non-repetitive On-State Current

Half Cycle, 50 Hz, Tj = 25º C

22.5

A

I2t

Fusing Current

tp = 10ms, Half Cycle

2.5

A2s

VGRM

Peak Reverse Gate Voltage

IGR = 10 µA, Tj = 25 ºC

8

V

IGM

Peak Gate Current

20 µs max.

1.2

A

PGM

Peak Gate Dissipation

20 µs max.

3

W

PG(AV)

Gate Dissipation

20ms max.

0.2

W

Tj

Operating Temperature

-40

+125

ºC

Tstg

Storage Temperature

-40

+150

ºC

Tsld

Soldering Temperature

1.6 mm from case, 10s max.

260

ºC

SYMBOL

PARAMETER

CONDITIONS

VOLTAGE

Unit

B

D

M

N

VDRM

Repetitive Peak Off State

RGK = 1 KΩ

200

400

600

800

V

VRRM

Voltage

Jun - 02

FS02...A/B

SENSITIVEGATESCR

Electrical Characteristics

SYMBOL

PARAMETER

CONDITIONS

SENSITIVITY

Unit

01

04

02

03

IGT

Gate Trigger Current

VD = 12 VDC , RL = 140Ω, Tj = 25 ºC

MIN

1

15

20

µA

MAX

20

50

200

200

IDRM / IRRM

Off-State Leakage Current

Ω

Tj = 125 ºC

MAX

500

µA

VD = VDRM , RGK = 1K ,

VR = VRRM ,

Tj = 25 ºC

MAX

5

VTM

On-state Voltage

at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC

MAX

1.45

V

VT(O)

On-state Threshold Voltage

Tj = 125 ºC

MAX

0.9

V

rd

Dinamic Resistance

Tj = 125 ºC

MAX

200

mΩ

VGT

Gate Trigger Voltage

Ω

, Tj = 25 ºC

MAX

0.8

V

VD = 12 VDC , RL = 140

VGD

Gate Non Trigger Voltage

Ω

RGK = 1K

Ω

,

MIN

0.1

V

VD = VDRM , RL = 3.3K ,

Tj = 125 ºC

IH

Holding Current

Ω

MAX

5

mA

IT = 50 mA , RGK = 1K , Tj = 25 ºC

IL

Latching Current

Ω

MAX

6

mA

IG = 1 mA , RGK = 1K , Tj = 25 ºC

dv / dt

Critical Rate of Voltage

VD = 0.67 x VDRM , RGK = 1KΩ,

MIN

15

15

10

20

V/µs

Rise

Tj = 125 ºC

di / dt

Critical Rate of Current Rise

IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz,

MIN

50

A/µs

Tj = 125 ºC

Rth(j-l)

Thermal Resistance

60

ºC/W

Junction-Leads for DC

Rth(j-a)

Thermal Resistance

150

ºC/W

Junction-Ambient

PARTNUMBERINFORMATION

F S 02

01 B A 00 BU

FAGOR

PACKAGING

SCR

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Jun - 02