FS04...I
SENSITIVEGATESCR
IPAK |
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(Plastic) |
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On-State Current |
Gate Trigger Current |
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4 Amp |
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< 200 µA |
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Off-State Voltage |
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A |
200 V ÷ 600 V |
K |
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These series of Silicon Controlled Rectifier use |
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a high performance PNPN technology. |
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These parts are intended for general purpose |
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applications where high gate sensitivity is |
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required like small engine ignition, SMPS |
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crowbar protection, food procesor. |
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Absolute Maximum Ratings, according to IEC publication No. 134 |
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SYMBOL |
PARAMETER |
CONDITIONS |
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Min. |
Max. |
Unit |
IT(RMS) |
On-state Current |
180º Conduction Angle, Tc = 105 ºC 4 |
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Ta = 25 ºC |
1.35 |
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IT(AV) |
Average On-state Current |
Half Cycle, Θ = 180 º, Tc = 105 ºC |
2.5 |
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A |
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Ta = 25 ºC |
0.9 |
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ITSM |
Non-repetitive On-State Current |
Half Cycle, 60 Hz |
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33 |
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A |
ITSM |
Non-repetitive On-State Current |
Half Cycle, 50 Hz |
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30 |
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A |
I2t |
Fusing Current |
t = 10ms, Half Cycle |
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4.5 |
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A2s |
VGRM |
Peak Reverse Gate Voltage |
IGR = 10 µA |
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8 |
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V |
IGM |
Peak Gate Current |
20 µs max. |
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1.2 |
A |
PGM |
Peak Gate Dissipation |
20 µs max. |
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3 |
W |
PG(AV) |
Gate Dissipation |
20 ms max. |
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0.2 |
W |
Tj |
Operating Temperature |
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-40 |
+125 |
ºC |
Tstg |
Storage Temperature |
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-40 |
+150 |
ºC |
TL |
Lead Temperature for Soldering |
10s at 4.5mm from case |
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260 |
ºC |
SYMBOL |
PARAMETER |
CONDITIONS |
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VOLTAGE |
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Unit |
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B |
D |
M |
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VDRM |
Repetitive Peak Off State |
RGK = 1 KΩ |
200 |
400 |
600 |
V |
VRRM |
Voltage |
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Jun - 02
FS04...I
SENSITIVEGATESCR
Electrical Characteristics
SYMBOL |
PARAMETER |
CONDITIONS |
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SENSITIVITY |
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Unit |
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01 |
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04 |
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02 |
03 |
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IGT |
Gate Trigger Current |
VD = 12 VDC , RL = 33Ω, Tj = 25 ºC |
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MIN |
1 |
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15 |
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20 |
µA |
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MAX |
20 |
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50 |
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200 |
200 |
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IDRM / IRRM |
Off-State Leakage Current |
VD = VDRM , RGK = 220Ω, |
Tj = 125 ºC |
MAX |
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1 |
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mA |
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VR = VRRM , |
Tj = 25 ºC |
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MAX |
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5 |
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µA |
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VTM |
On-state Voltage |
at IT = 8 Amp, tp = 380 µs, Tj = 25 ºC |
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MAX |
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1.6 |
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V |
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VGT |
Gate Trigger Voltage |
VD = 12 VDC , RL = 33Ω, Tj = 25 ºC |
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MAX |
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0.8 |
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V |
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VGD |
Gate Non Trigger Voltage |
Ω |
RGK = 220 |
Ω |
, |
MIN |
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0.1 |
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V |
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VD = VDRM , RL = 3.3K , |
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Tj = 125 ºC |
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IH |
Holding Current |
IT = 50 mA , RGK = 1KΩ, Tj = 25 ºC |
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MAX |
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5 |
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mA |
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IL |
Latching Current |
IG = 1 mA , RGK = 1KΩ, Tj = 25 ºC |
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MAX |
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6 |
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mA |
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dv / dt |
Critical Rate of Voltage |
VD = 0.67 x VDRM , RGK = 220Ω, |
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MIN |
10 |
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10 |
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10 |
V/µs |
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5 |
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Rise |
Tj = 125 ºC |
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di / dt |
Critical Rate of Current Rise |
IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, |
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MIN |
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50 |
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A/µs |
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Tj = 125 ºC |
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Rth(j-c) |
Thermal Resistance |
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7.5 |
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ºC/W |
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Junction-Case for DC |
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Rth(j-a) |
Thermal Resistance |
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100 |
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ºC/W |
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Junction-Ambient |
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PARTNUMBERINFORMATION
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F S 04 |
01 B I 00 TU |
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FAGOR |
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PACKAGING |
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SCR |
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FORMING |
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CASE |
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CURRENT |
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VOLTAGE |
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SENSITIVITY |
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Jun - 02