FT04...E/F
LOGICLEVELTRIAC
TO202-1 (E) |
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TO202-3 (F) |
On-State Current |
Gate Trigger Current |
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4 Amp |
< 5 mA to < 10 mA |
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Off-State Voltage |
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MT2 |
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200 V ÷ 600 V |
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MT2 |
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This series of TRIACs uses a high |
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MT1 |
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performance PNPN technology. |
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MT1 |
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MT2 |
These parts are intended for general |
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MT2 |
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purpose AC switching applications with |
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G |
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highly inductive loads. |
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Absolute Maximum Ratings, according to IEC publication No. 134 |
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SYMBOL |
PARAMETER |
CONDITIONS |
Min. |
Max. |
Unit |
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IT(RMS) |
RMS On-state Current |
All Conduction Angle, Tc = 110 ºC |
4 |
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A |
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ITSM |
Non-repetitive On-State Current |
Half Cycle, 60 Hz |
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21 |
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A |
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ITSM |
Non-repetitive On-State Current |
Half Cycle, 50 Hz |
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20 |
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A |
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I2t |
Fusing Current |
tp = 10 ms, Half Cycle |
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2.2 |
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A2s |
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IGM |
Peak Gate Current |
20 µs max. |
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1.2 |
A |
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PGM |
Peak Gate Dissipation |
20 µs max. |
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2 |
W |
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PG(AV) |
Gate Dissipation |
20 ms max. |
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0.2 |
W |
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di/dt |
Critical rate of rise of on-state current |
IG = 2 x IGT Tr ≤ 200 ns, |
F = 120 Hz |
20 |
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A/µs |
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Tj = 125 ºC |
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Tj |
Operating Temperature |
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-40 |
+125 |
ºC |
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Tstg |
Storage Temperature |
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-40 |
+150 |
ºC |
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Tsld |
Soldering Temperature |
1.6 mm from case, 10s max. |
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260 |
ºC |
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SYMBOL |
PARAMETER |
CONDITIONS |
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VOLTAGE |
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Unit |
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B |
D |
M |
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VDRM |
Repetitive Peak Off State |
RGK = 1 KΩ |
200 |
400 |
600 |
V |
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VRRM |
Voltage |
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Jul - 02
FT04...E/F
LOGICLEVELTRIAC
Electrical Characteristics
SYMBOL |
PARAMETER |
CONDITIONS |
Quadrant |
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SENSITIVITY |
Unit |
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05 |
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09 |
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IGT |
Gate Trigger Current |
VD = 12 VDC , RL = 30Ω, |
Tj = 25 ºC |
Q1÷Q3 |
MAX |
5 |
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10 |
mA |
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Q4 |
MAX |
5 |
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10 |
mA |
IDRM /IRRM |
Off-State Leakage Current |
VD = VDRM , |
Tj = 125 ºC |
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MAX |
0.5 |
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mA |
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VR = VRRM , |
Tj = 25 ºC |
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MAX |
5 |
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µA |
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Vto |
Threshold Voltage |
Tj = 125 ºC |
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MAX |
0.95 |
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V |
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Rd |
Dynamic Resistance |
Tj = 125 ºC |
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MAX |
180 |
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mΩ |
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VTM * |
On-state Voltage |
IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC |
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MAX |
2 |
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V |
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VGT |
Gate Trigger Voltage |
VD = 12 VDC , RL = 30Ω, |
Tj = 25 ºC |
Q1÷Q4 |
MAX |
1.3 |
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V |
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VGD |
Gate Non Trigger Voltage |
VD = VDRM , RL = 3.3KΩ, |
Tj = 125 ºC |
Q1÷Q4 |
MIN |
0.2 |
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V |
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IH* |
Holding Current |
IT = 50 mA |
Tj = 25 ºC |
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MAX |
7 |
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10 |
mA |
IL |
Latching Current |
GT |
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Q1,Q3,Q4 |
MAX |
10 |
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15 |
mA |
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IG = 1.2 I , Tj = 25 ºC |
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Q2 |
MAX |
15 |
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25 |
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dv / dt* |
Critical Rate of Voltage Rise |
VD = 0.67 x VDRM , Gate open |
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MIN |
20 |
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100 |
V/µs |
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Tj = 125 ºC |
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(dv/dt)c* |
Critidal rise rate of |
(di/dt)c= 1.8 A/ms |
Tj = 110 ºC |
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MIN |
1 |
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2 |
V/µs |
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commutating off-state |
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Voltage |
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Thermal Resistance |
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Rth(j-l) |
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15 |
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ºC/W |
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Junction-Leads for AC |
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Rth(j-a) |
Thermal Resistance |
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100 |
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ºC/W |
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Junction-Ambient |
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(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.
PARTNUMBERINFORMATION
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F T 04 |
09 B E 00 TU |
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FAGOR |
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PACKAGING |
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SCR |
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FORMING |
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CASE |
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CURRENT |
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VOLTAGE |
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SENSITIVITY |
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Jul - 02