FAGOR FT0409ME, FT0409DF, FT0409DE, FT0409BF, FT0409BE Datasheet

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FAGOR FT0409ME, FT0409DF, FT0409DE, FT0409BF, FT0409BE Datasheet

FT04...E/F

LOGICLEVELTRIAC

TO202-1 (E)

 

TO202-3 (F)

On-State Current

Gate Trigger Current

 

4 Amp

< 5 mA to < 10 mA

 

 

 

 

 

 

Off-State Voltage

 

MT2

 

200 V ÷ 600 V

 

MT2

 

 

 

 

 

 

 

 

This series of TRIACs uses a high

 

MT1

 

performance PNPN technology.

 

 

MT1

 

 

 

 

 

MT2

These parts are intended for general

 

MT2

 

G

 

purpose AC switching applications with

 

G

 

 

highly inductive loads.

 

 

 

Absolute Maximum Ratings, according to IEC publication No. 134

 

 

 

SYMBOL

PARAMETER

CONDITIONS

Min.

Max.

Unit

IT(RMS)

RMS On-state Current

All Conduction Angle, Tc = 110 ºC

4

 

A

ITSM

Non-repetitive On-State Current

Half Cycle, 60 Hz

 

21

 

A

ITSM

Non-repetitive On-State Current

Half Cycle, 50 Hz

 

20

 

A

I2t

Fusing Current

tp = 10 ms, Half Cycle

 

2.2

 

A2s

IGM

Peak Gate Current

20 µs max.

 

 

1.2

A

PGM

Peak Gate Dissipation

20 µs max.

 

 

2

W

PG(AV)

Gate Dissipation

20 ms max.

 

 

0.2

W

di/dt

Critical rate of rise of on-state current

IG = 2 x IGT Tr 200 ns,

F = 120 Hz

20

 

A/µs

 

 

Tj = 125 ºC

 

 

 

 

Tj

Operating Temperature

 

 

-40

+125

ºC

Tstg

Storage Temperature

 

 

-40

+150

ºC

Tsld

Soldering Temperature

1.6 mm from case, 10s max.

 

260

ºC

SYMBOL

PARAMETER

CONDITIONS

 

VOLTAGE

 

Unit

 

 

 

B

D

M

 

VDRM

Repetitive Peak Off State

RGK = 1 KΩ

200

400

600

V

VRRM

Voltage

 

 

 

 

 

Jul - 02

FT04...E/F

LOGICLEVELTRIAC

Electrical Characteristics

SYMBOL

PARAMETER

CONDITIONS

Quadrant

 

SENSITIVITY

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

05

 

09

 

IGT

Gate Trigger Current

VD = 12 VDC , RL = 30Ω,

Tj = 25 ºC

Q1÷Q3

MAX

5

 

10

mA

 

 

 

 

Q4

MAX

5

 

10

mA

IDRM /IRRM

Off-State Leakage Current

VD = VDRM ,

Tj = 125 ºC

 

MAX

0.5

 

mA

 

 

VR = VRRM ,

Tj = 25 ºC

 

MAX

5

 

µA

Vto

Threshold Voltage

Tj = 125 ºC

 

 

MAX

0.95

 

V

Rd

Dynamic Resistance

Tj = 125 ºC

 

 

MAX

180

 

mΩ

VTM *

On-state Voltage

IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC

 

MAX

2

 

V

VGT

Gate Trigger Voltage

VD = 12 VDC , RL = 30Ω,

Tj = 25 ºC

Q1÷Q4

MAX

1.3

 

V

VGD

Gate Non Trigger Voltage

VD = VDRM , RL = 3.3KΩ,

Tj = 125 ºC

Q1÷Q4

MIN

0.2

 

V

IH*

Holding Current

IT = 50 mA

Tj = 25 ºC

 

MAX

7

 

10

mA

IL

Latching Current

GT

 

Q1,Q3,Q4

MAX

10

 

15

mA

 

IG = 1.2 I , Tj = 25 ºC

 

 

 

 

 

 

Q2

MAX

15

 

25

 

dv / dt*

Critical Rate of Voltage Rise

VD = 0.67 x VDRM , Gate open

 

MIN

20

 

100

V/µs

 

 

Tj = 125 ºC

 

 

 

 

 

 

 

(dv/dt)c*

Critidal rise rate of

(di/dt)c= 1.8 A/ms

Tj = 110 ºC

 

MIN

1

 

2

V/µs

 

commutating off-state

 

 

 

 

 

 

 

 

 

Voltage

 

 

 

 

 

 

 

 

 

Thermal Resistance

 

 

 

 

 

 

 

 

Rth(j-l)

 

 

 

 

15

 

ºC/W

 

Junction-Leads for AC

 

 

 

 

 

 

 

 

Rth(j-a)

Thermal Resistance

 

 

 

 

100

 

ºC/W

 

Junction-Ambient

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.

PARTNUMBERINFORMATION

 

 

F T 04

09 B E 00 TU

FAGOR

 

 

 

 

 

 

 

 

 

 

 

 

 

PACKAGING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SCR

 

 

 

 

 

 

 

 

 

 

 

 

 

FORMING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SENSITIVITY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Jul - 02

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