FS0809.H
STANDARD
SCR
TO220-AB
K
A
G
On-State Current |
Gate Trigger Current |
8 Amp |
> 2 mA to < 15 mA |
Off-State Voltage
200 V ÷ 600 V
These series of Silicon Controlled R ectifier use a high performance PNPN technology.
These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology.
Absolute
Maximum
Ratings,
according
to
IEC
publication
No.
134
SYMBOL |
PARAMETER |
CONDITIONS |
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Min. |
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Max. |
Unit |
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IT(RMS) |
On-state Current |
180º Conduction Angle, Tc = 110 ºC |
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8 |
A |
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IT(AV) |
Average On-state Current |
Half Cycle, Θ = 180 º, TC = 110 ºC |
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5 |
A |
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ITSM |
Non-repetitive On-State Current |
Half Cycle, 60 Hz |
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100 |
A |
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ITSM |
Non-repetitive On-State Current |
Half Cycle, 50 Hz |
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95 |
A |
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I2t |
Fusing Current |
tp = 10ms, Half Cycle |
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45 |
A2s |
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VGRM |
Peak Reverse Gate Voltage |
IGR = 10 µA |
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5 |
V |
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IGM |
Peak Gate Current |
20 µs max. |
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4 |
A |
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PGM |
Peak Gate Dissipation |
20 µs max. |
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5 |
W |
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PG(AV) |
Gate Dissipation |
20ms max. |
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1 |
W |
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Tj |
Operating Temperature |
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-40 |
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+125 |
ºC |
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Tstg |
Storage Temperature |
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-40 |
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+150 |
ºC |
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Tsld |
Soldering Temperature |
10s max. |
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260 |
ºC |
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SYMBOL |
PARAMETER |
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CONDITIONS |
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VOLTAGE |
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Unit |
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B |
D |
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M |
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VDRM |
Repetitive Peak Off State |
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RGK = 1 KΩ |
200 |
400 |
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600 |
V |
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VRRM |
Voltage |
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Dec - 02
FS0809.H
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STANDARD |
SCR |
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Electrical Characteristics |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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SENSITIVITY |
Unit |
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09 |
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IGT |
Gate Trigger Current |
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Ω |
. Tj = 25 ºC |
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MIN |
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2 |
mA |
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VD = 12 VDC , RL = 140 |
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MAX |
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15 |
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IDRM / IRRM |
Off-State Leakage Current |
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Ω |
Tj = 125 ºC |
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MAX |
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2 |
mA |
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VD = VDRM , RGK = 220 |
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VR = VRRM , |
Tj = 25 ºC |
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MAX |
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5 |
µA |
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VTM |
On-state Voltage |
at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC |
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MAX |
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1.6 |
V |
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VGT |
Gate Trigger Voltage |
VD = 12 VDC , RL = 140Ω, Tj = 25 ºC |
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MAX |
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1.3 |
V |
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VGD |
Gate Non Trigger Voltage |
VD = VDRM , RL = 3.3KΩ, RGK = 220Ω |
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MIN |
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0.2 |
V |
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Tj = 125 ºC |
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IH |
Holding Current |
IT = 100 mA , Gate open |
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MAX |
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30 |
mA |
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IL |
Latching Current |
IG = 1.2 IGT |
Tj = 25 ºC |
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MAX |
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70 |
mA |
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dv / dt |
Critical Rate of Voltage Rise |
VD = 0.67 x VDRM , Gate open Tj = 125 ºC |
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MIN |
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150 |
V/µs |
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di / dt |
Critical Rate of Current Rise |
IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, |
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MIN |
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50 |
A/µs |
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Tj = 125 ºC |
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Rth(j-c) |
Thermal Resistance |
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20 |
ºC/W |
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Junction-Case for DC |
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Rth(j-a) |
Thermal Resistance |
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60 |
ºC/W |
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Junction-Amb for DC |
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Vt0 |
Threshold Voltage |
Tj = 125 ºC |
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MAX |
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0.85 |
V |
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Rd |
Dynamic resistance |
Tj = 125 ºC |
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MAX |
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46 |
mΩ |
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PART
NUMBER
INFORMATION
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F S 08 |
09 B H 00 TU |
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FAGOR |
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PACKAGING |
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SCR |
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FORMING |
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CURRENT |
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VOLTAGE |
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SENSITIVITY |
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Dec - 02
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