FAGOR FS1614MH, FS1614DH, FS1614BH, FS1610MH, FS1610DH Datasheet

					FS16...H
		STANDARD SCR
	TO220-AB	On-State Current	Gate Trigger Current
		16 Amp		> 2 mA to < 40 mA
		Off-State Voltage
		200 V ÷ 600 V
		These series of Silicon Controlled
		R ectifier use a high performance
		PNPN technology.
K		These parts are intended for general
A
		purpose high current applications where
G
		moderate gate insensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL	PARAMETER	CONDITIONS		Min.	Max.	Unit
IT(RMS)	On-state Current	180º Conduction Angle, Tc = 110 ºC			16	A
IT(AV)	Average On-state Current	Half Cycle, Θ = 180 º, TC = 110 ºC			10	A
ITSM	Non-repetitive On-State Current	Half Cycle, 60 Hz			200	A
ITSM	Non-repetitive On-State Current	Half Cycle, 50 Hz			190	A
I2t	Fusing Current	tp = 10ms, Half Cycle			180	A2s
VGRM	Peak Reverse Gate Voltage	IGR = 10 µA			5	V
IGM	Peak Gate Current	20 µs max.			4	A
PGM	Peak Gate Dissipation	20 µs max.			10	W
PG(AV)	Gate Dissipation	20ms max.			1	W
Tj	Operating Temperature			-40	+125	ºC
Tstg	Storage Temperature			-40	+150	ºC
Tsld	Soldering Temperature	10s max.			260	ºC
SYMBOL	PARAMETER	CONDITIONS		VOLTAGE		Unit
			B	D	M
VDRM	Repetitive Peak Off State	RGK = 1 KΩ	200	400	600	V
VRRM	Voltage

Dec - 02

FS16...H

STANDARD

SCR

Electrical Characteristics

SYMBOL

PARAMETER

CONDITIONS

SENSITIVITY

Unit

10

14

IGT

MIN

2

4

mA

Gate Trigger Current

VD = 12 VDC , RL = 33Ω. Tj = 25 ºC

MAX

25

40

IDRM / IRRM

Off-State Leakage Current

VD = VDRM , RGK = 220Ω

Tj = 125 ºC

MAX

2

mA

VR = VRRM ,

Tj = 25 ºC

MAX

5

µA

VTM

On-state Voltage

at IT = 32 Amp, tp = 380 µs, Tj = 25 ºC

MAX

1.6

V

VGT

Gate Trigger Voltage

VD = 12 VDC , RL = 33Ω, Tj = 25 ºC

MAX

1.3

V

VGD

Gate Non Trigger Voltage

VD = VDRM ,

RL = 3.3KΩ

MIN

0.2

V

Tj = 125 ºC

IH

Holding Current

IT = 500 mA , Gate open, Tj = 25 ºC

MAX

40

50

mA

IL

Latching Current

IG = 1.2 IGT

MAX

60

90

mA

dv / dt

Critical Rate of Voltage Rise

VD = 0.67 x VDRM , Gate open Tj = 125 ºC

MIN

500

1000

V/µs

di / dt

Critical Rate of Current Rise

IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz,

MIN

50

A/µs

Tj = 125 ºC

Rth(j-c)

Thermal Resistance

1.1

ºC/W

Junction-Case for DC

Rth(j-a)

Thermal Resistance

60

ºC/W

Junction-Amb

Vt0

Threshold Voltage

Tj = 125 ºC

MAX

0.77

V

Rd

Dynamic resistance

Tj = 125 ºC

MAX

23

mΩ

PARTNUMBERINFORMATION

F S 16

10 B H 00 TU

FAGOR

PACKAGING

SCR

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Dec - 02