FT04...H
HIGHCOMMUTATIONTRIAC
MT1
MT2
TO220-AB
On-State Current |
Gate Trigger Current |
4 Amp |
≤ 25 mA to ≤ 35 mA |
MT2 |
Off-State Voltage |
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200 V ÷ 600 V |
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This series of TRIACs uses a high |
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performance PNPN technology. |
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G |
These parts are intended for general |
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purpose AC switching applications with |
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highly inductive loads. |
AbsoluteMaximumRatings,accordingtoIECpublicationNo.134
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PARAMETER |
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CONDITIONS |
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Min. |
Max. |
Unit |
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IT(RMS) |
RMS On-state Current |
All Conduction Angle, TC = 110 ºC |
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4 |
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A |
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ITSM |
Non-repetitive On-State Current |
Full Cycle, 60 Hz |
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A |
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ITSM |
Non-repetitive On-State Current |
Full Cycle, 50 Hz |
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30 |
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A |
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I2t |
Fusing Current |
tp = 10 ms, Half Cycle |
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5.1 |
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A2s |
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IGM |
Peak Gate Current |
20 µs max. |
Tj =125ºC |
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4 |
A |
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PG(AV) |
Average Gate Power Dissipation |
Tj =125ºC |
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1 |
W |
di/dt |
Critical rate of rise of on-state current |
IG = 2x IGT, tr ≤100ns |
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50 |
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A/µs |
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f= 120 Hz, Tj =125ºC |
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Tj |
Operating Temperature |
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-40 |
+125 |
ºC |
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Tstg |
Storage Temperature |
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-40 |
+150 |
ºC |
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SYMBOL |
PARAMETER |
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VOLTAGE |
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Unit |
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B |
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D |
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M |
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VDRM |
Repetitive Peak Off State |
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200 |
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400 |
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600 |
V |
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VRRM |
Voltage |
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Nov - 02
FT04...H
HIGHCOMMUTATIONTRIAC
Electrical Characteristics
SYMBOL |
PARAMETER |
CONDITIONS |
Quadrant |
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SENSITIVITY |
Unit |
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11 |
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14 |
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IGT (1) |
Gate Trigger Current |
VD = 12 VDC , RL = 33Ω, |
Tj = 25 ºC |
Q1÷Q3 |
MAX |
25 |
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35 |
mA |
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VD = VDRM , |
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mA |
IDRM /IRRM |
Off-State Leakage Current |
VR = VRRM , |
Tj = 125 ºC |
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MAX |
1 |
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mA |
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Tj = 25 ºC |
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MAX |
5 |
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µA |
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Vto |
(2) |
Threshold Voltage |
Tj = 125 ºC |
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MAX |
0.9 |
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V |
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Rd(2) |
Dynamic Resistance |
Tj = 125 ºC |
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MAX |
120 |
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mΩ |
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V |
(2) |
On-state Voltage |
IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC |
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MAX |
1.6 |
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V |
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TM |
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VGT |
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Gate Trigger Voltage |
VD = 12 VDC , RL = 33Ω, |
Tj = 25 ºC |
Q1÷Q3 |
MAX |
1.3 |
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V |
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VGD |
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Gate Non Trigger Voltage |
VD = VDRM , RL = 3.3KΩ, |
Tj = 125 ºC |
Q1÷Q3 |
MIN |
0.2 |
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V |
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IH (2) |
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Holding Current |
IT = 100 mA , Gate open, |
Tj = 25 ºC |
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MAX |
25 |
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35 |
mA |
IL |
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Latching Current |
IG = 1.2 IGT, Tj = 25 ºC |
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Q1, Q3 |
MAX |
25 |
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50 |
mA |
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VD = 0.67 x VDRM , Gate open |
Q2 |
MAX |
50 |
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60 |
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dv / dt (2) |
Critical Rate of Voltage Rise |
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MIN |
200 |
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400 |
V/µs |
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Tj = 125 ºC |
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(dI/dt)c (2) |
Critical Rate of Current Rise |
(dv/dt)c= 0.1 V/µs |
Tj = 125 ºC |
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MIN |
4.4 |
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A/ms |
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(dv/dt)c= 10 V/µs |
Tj = 125 ºC |
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MIN |
2.7 |
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without snubber |
Tj = 125 ºC |
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MIN |
- |
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2.5 |
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Rth(j-c) |
Thermal Resistance |
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2.6 |
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ºC/W |
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Junction-Case |
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Rth(j-a) |
Thermal Resistance |
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60 |
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ºC/W |
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Junction-Ambient |
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(1)Minimum IGT is guaranted at 5% of IGT max.
(2)For either polarity of electrode MT2 voltage with reference to electrode MT1.
PARTNUMBERINFORMATION
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F T 04 |
11 B H 00 TU |
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FAGOR |
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PACKAGING |
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TRIAC |
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FORMING |
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CASE |
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CURRENT |
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VOLTAGE |
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SENSITIVITY |
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Nov - 02