FAGOR FT0408MD, FT0408DD, FT0408BD, FT0407MD, FT0414MD Datasheet

FT04...D

SURFACEMOUNTTRIAC

	DPAK
	(Plastic)	On-State Current	Gate Trigger Current
		4 Amp	< 5 mA to < 35 mA
		Off-State Voltage
	MT2	200 V ÷ 600 V
MT1
		This series of TRIACs uses a high performance
MT2		PNPN technology.
G		These devices are intended for AC control
		applications using surface mount technology.
		The high commutation performances combined with
		high sensitivity, make them perfect in all applications
		like solid state relays, home appliances, power tools,
		small motor drives...

AbsoluteMaximumRatings,accordingtoIECpublicationNo.134

SYMBOL	PARAMETER	CONDITIONS				Min.		Max.	Unit
IT(RMS)	RMS On-state Current	All Conduction Angle, TC = 110 ºC				4			A
ITSM	Non-repetitive On-State Current	Half Cycle, 60 Hz				31			A
ITSM	Non-repetitive On-State Current	Half Cycle, 50 Hz				30			A
I2t	Fusing Current	tp = 10 ms, Half Cycle				5.1			A2s
IGM	Peak Gate Current	20 µs max.						4	A
PGM	Peak Gate Dissipation	20 µs max.						3	W
PG(AV)	Gate Dissipation	20 ms max.						1	W
di/dt	Critical rate of rise of on-state current	IG = 2 x IGT Tr ≤ 200 ns, F = 120 Hz				50			A/µs
		Tj = 125 ºC
Tj	Operating Temperature							+125	ºC
Tstg	Storage Temperature					-40		+150	ºC
TL	Lead Temperature for Soldering	4.5 mm from case, 10s max.				-40		260	ºC
SYMBOL	PARAMETER				VOLTAGE				Unit
			B		D			M
VDRM	Repetitive Peak Off State		200		400			600	V
VRRM	Voltage

Jul - 03

FT04...D

SURFACEMOUNTTRIAC

Electrical Characteristics

SYMBOL	PARAMETER	CONDITIONS		Quadrant			SENSITIVITY				Unit
						07	08		11	14
IGT (1)	Gate Trigger Current	VD = 12 VDC , RL = 30Ω		Q1÷Q3	MAX	5	10		25	35	mA
		Tj = 25 ºC		Q4		7					mA
IDRM /IRRM	Off-State Leakage Current	VR = VDRM ,	Tj = 125 ºC		MAX			1			mA
		VR = VRRM ,	Tj = 25 ºC		MAX			5			µA
Vto (2)	Threshold Voltage	Tj = 125 ºC			MAX			0.9			V
Rd(2)	Dynamic Resistance	Tj = 125 ºC			MAX			120			mΩ
VTM (2)	On-state Voltage	IT = 5.5 Amp, tp = 380 µs,	Tj = 25 ºC		MAX			1.6			V
VGT	Gate Trigger Voltage	Ω	Tj = 25 ºC	Q1÷Q3	MAX			1.3			V
		VD = 12 VDC , RL = 30 ,
VGD	Gate Non Trigger Voltage	VD = VDRM , RL = 3.3KΩ,	Tj = 125 ºC	Q1÷Q3	MIN			0.2			V
IH (2)	Holding Current	IT = 100 mA , Gate open,	Tj = 25 ºC		MAX	10	15		25	35	mA
IL	Latching Current	IG = 1.2 IGT, Tj = 25 ºC		Q1,Q3	MAX	10	20		25	50	mA
				Q2	MAX	15	30		50	60
dv / dt (2)	Critical Rate of Voltage Rise	VD = 0.67 x VDRM , Gate open			MIN	20	100		200	400	V/µs
		Tj = 125 ºC
(dI/dt)c (2)	Critical Rate of Current Rise	(dv/dt)c= 0.1 V/µs	Tj = 125 ºC		MIN	1.8	2.7		4.4	-	A/ms
		(dv/dt)c= 10 V/µs	Tj = 125 ºC		MIN	0.9	2.0		2.7	-
		without snubber	Tj = 125 ºC		MIN	-	-		-	2.5
tgd	Gate Controlled	IG = 2xIGT, VD = VDRM		Q1÷Q3	TYP			2			µs
	Delay Time	diG/dt = 3 A/µs, ITM = 5.5 A
Rth(j-c)	Thermal Resistance							2.6			ºC/W
	Junction-Case
Rth(j-a)	Thermal Resistance							70			ºC/W
	Junction-Ambient

(1)Minimum IGT is guaranted at 5% of IGT max.

(2)For either polarity of electrode MT2 voltage with reference to electrode MT1.

PARTNUMBERINFORMATION

F T 04

11 B D 00 TR

FAGOR

PACKAGING

SCR

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Jul - 03