FAGOR FT0808DI, FT0808BI, FT0807MI, FT0807BI, FT0808MI Datasheet

FT08...I

LOGICLEVELTRIAC

IPAK
(Plastic)		On-State Current	Gate Trigger Current
		8 Amp	< 5 mA to < 10 mA
		Off-State Voltage
		200 V ÷ 600 V
	MT2
		This series of TRIACs uses a high performance
MT1		PNPN technology.
MT2		These devices are intended for AC control
G		applications using surface mount technology.
		The high commutation performances combined with
		high sensitivity, make them perfect in all applications
		like solid state relays, home appliances, power tools,
		small motor drives...

AbsoluteMaximumRatings,accordingtoIECpublicationNo.134

	SYMBOL	PARAMETER	CONDITIONS				Min.		Max.	Unit
	IT(RMS)	RMS On-state Current	All Conduction Angle, TC = 110 ºC				8			A
	ITSM	Non-repetitive On-State Current	Half Cycle, 60 Hz				84			A
	ITSM	Non-repetitive On-State Current	Half Cycle, 50 Hz				80			A
	I2t	Fusing Current	tp = 10 ms, Half Cycle				36			A2s
	IGM	Peak Gate Current	20 µs max.						4	A
	PGM	Peak Gate Dissipation	20 µs max.						10	W
	PG(AV)	Gate Dissipation	20 ms max.						1	W
	di/dt	Critical rate of rise of on-state current	IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz				20			A/µs
			Tj = 125 ºC
	Tj	Operating Temperature Range					-40		+125	ºC
	Tstg	Storage Temperature Range					-40		+150	ºC
	TL	Lead Temperature for soldering	10s max.						260	ºC
	SYMBOL	PARAMETER			VOLTAGE					Unit
				B		D			M
	VDRM	Repetitive Peak Off State		200		400			600	V
	VRRM	Voltage

Jul - 02

FT08...I

LOGICLEVELTRIAC

Electrical Characteristics

SYMBOL

PARAMETER

CONDITIONS

Quadrant

SENSITIVITY

Unit

07

08

IGT

Gate Trigger Current

VD = 12 VDC , RL = 33Ω

Q1÷Q3

MAX

5

10

mA

Tj = 25 ºC

Q4

7

I

/I

RRM

Off-State Leakage Current

V = V

DRM

,

Tj = 125 ºC

MAX

1

mA

DRM

R

VR = VRRM ,

Tj = 25 ºC

MAX

5

µA

VTM

On-state Voltage

IT = 11 Amp, tp = 380 µs,

Tj = 25 ºC

MAX

1.55

V

VGT

Gate Trigger Voltage

VD = 12 VDC , RL = 33Ω,

Tj = 25 ºC

Q1÷Q3

MAX

1.3

V

VGD

Gate Non Trigger Voltage

VD = VDRM , RL = 3.3KΩ,

Tj = 125 ºC

Q1÷Q3

MIN

0.2

V

IH*

Holding Current

IT = 100 mA , Gate open,

Tj = 25 ºC

MAX

10

15

mA

IL

Latching Current

IG = 1.2 IGT, Tj = 25 ºC

Q1,Q3

MAX

10

20

mA

Q2

MAX

15

30

dv / dt*

Critical Rate of Voltage Rise

VD = 0.67 x VDRM , Gate open

MIN

20

100

V/µs

Tj = 125 ºC

(di/dt)c*

Critical Rate of Current Rise

(dv/dt)c= 0.1 V/µs

Tj = 125 ºC

MIN

3.5

5.4

A/ms

(dv/dt)c= 15 V/µs

Tj = 125 ºC

MIN

1.8

2.8

Rth(j-c)

without snubber

Tj = 125 ºC

MIN

Thermal Resistance

1.6

ºC/W

Junction-Case

Rth(j-a)

Thermal Resistance

100

ºC/W

Junction-Ambient

(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.

PARTNUMBERINFORMATION

F T 08

07 B I 00 TU

FAGOR

PACKAGING

TRIAC

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Jul - 02