FAGOR FS0808DI, FS0808BI, FS0809MI, FS0809DI, FS0809BI Datasheet

FS08...I

STANDARDSCR

	IPAK
	(Plastic)	On-State Current	Gate Trigger Current
		8 Amp		>0.5 to <15 mA
		Off-State Voltage
	A	200 V ÷ 600 V
K		These series of Silicon Controlled
A		R ectifier use a high performance
G		PNPN technology.
		These parts are intended for general
		purpose applications where high gate
		sensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL	PARAMETER	CONDITIONS		Min.	Max.	Unit
IT(RMS)	On-state Current	180º Conduction Angle, Tc = 110 ºC			8	A
IT(AV)	Average On-state Current	Half Cycle, Θ = 180 º, TC = 110 ºC			5	A
ITSM	Non-repetitive On-State Current	Half Cycle, 60 Hz			73	A
ITSM	Non-repetitive On-State Current	Half Cycle, 50 Hz			70	A
I2t	Fusing Current	tp = 10ms, Half Cycle			24.5	A2s
VGRM	Peak Reverse Gate Voltage	IGR = 10 µA			5	V
IGM	Peak Gate Current	20 µs max.			4	A
PGM	Peak Gate Dissipation	20 µs max.			5	W
PG(AV)	Gate Dissipation	20ms max.			1	W
Tj	Operating Temperature			-40	+125	ºC
Tstg	Storage Temperature			-40	+150	ºC
Tsld	Soldering Temperature	10s max.			260	ºC
SYMBOL	PARAMETER	CONDITIONS		VOLTAGE		Unit
			B	D	M
VDRM	Repetitive Peak Off State	RGK = 1 KΩ	200	400	600	V
VRRM	Voltage

Dec - 02

FS08...I

STANDARD

SCR

Electrical Characteristics

SYMBOL

PARAMETER

CONDITIONS

SENSITIVITY

Unit

08

09

IGT

Gate Trigger Current

VD = 12 VDC , RL = 33Ω. Tj = 25 ºC

MIN

0.5

2

mA

MAX

5

15

IDRM / IRRM

Off-State Leakage Current

VD = VDRM ,

Tj = 125 ºC

MAX

2

mA

VR = VRRM ,

Tj = 25 ºC

MAX

5

µA

VTM

On-state Voltage

at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC

MAX

1.6

V

VGT

Gate Trigger Voltage

VD = 12 VDC , RL = 33Ω, Tj = 25 ºC

MAX

1.3

V

VGD

Gate Non Trigger Voltage

VD = VDRM , RL = 3.3KΩ,

MIN

0.2

V

Tj = 125 ºC

IH

Holding Current

IT = 100 mA ,

Gate Open

MAX

25

40

mA

IL

Latching Current

IG = 1.2 IGT

RGK = 220Ω

MAX

30

50

mA

dv / dt

Critical Rate of Voltage Rise

VD = 0.67 x VDRM , Gate Open

MIN

50

150

V/µs

di / dt

Critical Rate of Current Rise

IG = 2 x IGT Tr ≤ 100 ns, Tj = 125 ºC

MIN

50

A/µs

Rth(j-c)

Thermal Resistance

Tj = 125 ºC

20

ºC/W

Junction-Case for DC

Rth(j-a)

Thermal Resistance

Tj = 125 ºC

100

ºC/W

Junction-Amb

Vt0

Threshold Voltage

Tj = 125 ºC

MAX

0.85

V

Rd

Dynamic resistance

Tj = 125 ºC

MAX

46

mΩ

PARTNUMBERINFORMATION

F S 08

08 B

I 00 TU

FAGOR

PACKAGING

SCR

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Dec - 02