FAGOR FS0802MI, FS0802DI, FS0802BI Datasheet

FS0802.I

SENSITIVEGATESCR

	IPAK
	(Plastic)	On-State Current		Gate Trigger Current
		8 Amp		< 200 µA
		Off-State Voltage
	A	200 V ÷ 600 V
K		These series of Silicon Controlled
A		R ectifier use a high performance
G		PNPN technology.
		These parts are intended for general
		purpose applications where high gate
		sensitivity is required.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL	PARAMETER	CONDITIONS		Min.	Max.	Unit
IT(RMS)	On-state Current	180º Conduction Angle, Tc = 110 ºC			8	A
IT(AV)	Average On-state Current	Half Cycle, Θ = 180 º, TC = 110 ºC			5	A
ITSM	Non-repetitive On-State Current	Half Cycle, 60 Hz			73	A
ITSM	Non-repetitive On-State Current	Half Cycle, 50 Hz			70	A
I2t	Fusing Current	tp = 10ms, Half Cycle			24.5	A2s
VGRM	Peak Reverse Gate Voltage	IGR = 10 µA			8	V
IGM	Peak Gate Current	20 µs max.			4	A
PGM	Peak Gate Dissipation	20 µs max.			5	W
PG(AV)	Gate Dissipation	20ms max.			1	W
Tj	Operating Temperature			-40	+125	ºC
Tstg	Storage Temperature			-40	+150	ºC
Tsld	Soldering Temperature	10s max.			260	ºC
SYMBOL	PARAMETER	CONDITIONS		VOLTAGE		Unit
			B	D	M
VDRM	Repetitive Peak Off State	RGK = 1 KΩ	200	400	600	V
VRRM	Voltage

Feb - 03

FS0802.I

SENSITIVE

GATE

SCR

Electrical Characteristics

SYMBOL

PARAMETER

CONDITIONS

SENSITIVITY

Unit

02

IGT

Gate Trigger Current

VD = 12 VDC , RL = 140Ω. Tj = 25 ºC

MIN

µA

MAX

200

IDRM / IRRM

Off-State Leakage Current

VD = VDRM ,

RGK = 220Ω

Tj = 125 ºC

MAX

1

mA

VR = VRRM ,

Tj = 25 ºC

MAX

5

µA

VTM

On-state Voltage

at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC

MAX

1.6

V

VGT

Gate Trigger Voltage

VD = 12 VDC , RL = 140Ω, Tj = 25 ºC

MAX

0.8

V

VGD

Gate Non Trigger Voltage

VD = VDRM , RL = 3.3KΩ,

RGK = 220Ω

MIN

0.1

V

Tj = 125 ºC

IH

Holding Current

IT = 50 mA ,

RGK =1KΩ

Tj = 25 ºC

MAX

5

mA

IL

Latching Current

IG = 1 mA

RGK =1KΩ

MAX

6

mA

dv / dt

Critical Rate of Voltage Rise

VD = 0.67 x VDRM , RGK = 220Ω

MIN

5

V/µs

Tj = 125 ºC

di / dt

Critical Rate of Current Rise

IG = 2 x IGT

Tr ≤ 100 ns,

Tj = 125 ºC

MIN

50

A/µs

Rth(j-c)

Thermal Resistance

20

ºC/W

Junction-Case for DC

Rth(j-a)

Thermal Resistance

100

ºC/W

Junction-Amb for DC

Vt0

Threshold Voltage

Tj = 125 ºC

MAX

0.85

V

Rd

Dynamic resistance

Tj = 125 ºC

MAX

46

mΩ

PARTNUMBERINFORMATION

F S 08

02 B

I 00 TR

FAGOR

PACKAGING

SCR

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Feb - 03