FS02...N
SURFACEMOUNTSCR
SOT223
(Plastic)
On-State Current |
Gate Trigger Current |
1.25 Amp |
< 200 µA |
Off-State Voltage
200 V ÷ 800 V
These series of Silicon Controlled
R ectifier use a high performance
PNPN technology.
These parts are intended for general purpose applications where high gate sensitivity is required using surface mount technology.
AbsoluteMaximumRatings,accordingtoIECpublicationNo.134
SYMBOL |
PARAMETER |
CONDITIONS |
Min. |
Max. |
Unit |
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IT(RMS) |
On-state Current* |
Half Cycle, Θ = 180 º, Ttab = 95 ºC |
1.25 |
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A |
IT(AV) |
Average On-state Current* |
Half Cycle, Θ = 180 º, Ttab = 95 ºC |
0.8 |
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A |
ITSM |
Non-repetitive On-State Current |
Half Cycle, 60 Hz, Tj = 25 ºC |
25 |
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A |
ITSM |
Non-repetitive On-State Current |
Half Cycle, 50 Hz, Tj = 25 ºC |
22.5 |
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A |
I2t |
Fusing Current |
tp = 10ms, Half Cycle |
2.5 |
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A2s |
VGRM |
Peak Reverse Gate Voltage |
IGR = 10 µA, Tj = 25 ºC |
8 |
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V |
IGM |
Peak Gate Current |
20 µs max. |
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1.2 |
A |
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PGM |
Peak Gate Dissipation |
20 µs max. |
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3 |
W |
PG(AV) |
Gate Dissipation |
20 ms max. |
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0.2 |
W |
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Tj |
Operating Temperature |
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-40 |
+125 |
ºC |
Tstg |
Storage Temperature |
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-40 |
+150 |
ºC |
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Tsld |
Soldering Temperature |
10s max. |
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260 |
ºC |
* with 5 cm2 copper (e= 35μm) surface under tab.
SYMBOL |
PARAMETER |
CONDITIONS |
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VOLTAGE |
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B |
D |
M |
N |
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VDRM |
Repetitive Peak Off State |
RGK = 1 KΩ |
200 |
400 |
600 |
800 |
V |
VRRM |
Voltage |
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Jun - 02
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FS02...N |
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SURFACE |
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MOUNT |
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SCR |
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Electrical Characteristics |
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SYMBOL |
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PARAMETER |
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CONDITIONS |
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SENSITIVITY |
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Unit |
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01 |
04 |
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02 |
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03 |
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IGT |
Gate Trigger Current |
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Ω |
, Tj = 25 ºC |
MIN |
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1 |
15 |
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20 |
µA |
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VD = 12 VDC , RL = 140 |
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MAX |
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20 |
50 |
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200 |
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200 |
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IDRM / IRRM |
Off-State Leakage Current |
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Ω |
Tj = 125 ºC |
MAX |
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500 |
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µA |
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VD = VDRM , RGK = 1K , |
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VR = VRRM , |
Tj = 25 ºC |
MAX |
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5 |
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VTM |
On-state Voltage |
at IT = 1.6 Amp, tp = 380 µs, Tj = 25 ºC |
MAX |
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1.45 |
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V |
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VT(O) |
On-state Threshold Voltage |
Tj = 125 ºC |
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MAX |
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0.9 |
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V |
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rd |
Dinamic Resistance |
Tj = 125 ºC |
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MAX |
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150 |
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mΩ |
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VGT |
Gate Trigger Voltage |
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Ω |
, Tj = 25 ºC |
MAX |
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0.8 |
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V |
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VD = 12 VDC , RL = 140 |
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VGD |
Gate Non Trigger Voltage |
VD = VDRM , RL = 3.3KΩ, |
RGK = 1KΩ, |
MIN |
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0.1 |
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V |
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Tj = 125 ºC |
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IH |
Holding Current |
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Ω |
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MAX |
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5 |
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mA |
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IT = 50 mA , RGK = 1K , Tj = 25 ºC |
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IL |
Latching Current |
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Ω |
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MAX |
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6 |
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mA |
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IG = 1 mA , RGK = 1K , Tj = 25 ºC |
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dv / dt |
Critical Rate of Voltage |
VD = 0.67 x VDRM , RGK = 1KΩ, |
MIN |
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15 |
15 |
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10 |
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20 |
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V/µs |
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Rise |
Tj = 125 ºC |
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di / dt |
Critical Rate of Current Rise |
IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, |
MIN |
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50 |
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A/µs |
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Tj = 125 ºC |
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Rth(j-l) |
Thermal Resistance |
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25 |
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ºC/W |
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Junction-Leads for DC |
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Rth(j-a) |
Thermal Resistance |
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60 |
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ºC/W |
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Junction-Ambient |
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PARTNUMBERINFORMATION
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F S 02 |
01 B N 00 RB |
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FAGOR |
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PACKAGING |
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SCR |
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FORMING |
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CASE |
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CURRENT |
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VOLTAGE |
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SENSITIVITY |
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Jun - 02