FAGOR FS0404MD, FS0404DD, FS0404BD, FS0403MD, FS0403DD Datasheet

On-State Current

4 Amp

FS04...D

SURFACE MOUNT SCR

These series of Silicon Controlled

Rectifier use a high performance

PNPN technology.

These par ts are intended for general
purpose applications where high gate
sensitivity is required using surface
mount technology.

Jun - 02

Absolute Maximum Ratings, according to IEC publication No. 134

On-state Current

Average On-State Current

Non-repetitive On-State Current

Non-repetitive On-State Current

Fusing Current

Peak Reverse Gate Voltage

Peak Gate Current

Peak Gate Dissipation

Gate Dissipation

Operating Temperature

Storage Temperature

Soldering Temperature

I

T(RMS)

PARAMETER CONDITIONS Min. Max. Unit

DPAK

(Plastic)

Gate Trigger Current

< 200 µA

Off-State Voltage

200 V ÷ 600 V

SYMBOL

I

T(AV)

I

TSM

I2t
V

GRM

I

GM

P

G(AV)

T

j

T

stg

T

sld

180º Conduction Angle, TC = 115 ºC

Half Cycle, Θ=180º, T

C

= 115 ºC

Half Cycle, 60 Hz

Half Cycle, 50 Hz

t = 10 ms, Half Cycle

I

GR

= 10µA

20 µs max.

20 µs max.

20 ms max.

10s max

4

2.5

33

30

4.5

8

-40

-40

A

A

A

A

A

2

s

V

A

W

W

ºC

ºC

ºC

1.2

3

0.2

+125

+150

260

Repetitive Peak Off State

Voltage

PARAMETER CONDITIONS VOLTAGE UnitSYMBOL

V

DRM

V

RRM

R

GK

= 1 KΩ

B

200 V

D

400

I

TSM

P

GM

K

A

G

A

M

600

FS04...D

SURFACE MOUNT SCR

Jun - 02

Electrical Characteristics

Gate Trigger Current

Off-State Leakage Current

On-state Voltage

Gate Trigger Voltage

Gate Non Trigger Voltage

Holding Current

Latching Current

PARAMETER CONDITIONS SENSITIVITY

Unit

SYMBOL

I

GT

I

DRM

VD = 12 V

DC

, R

L

= 33Ω. T

j

= 25 ºC

01

1

20

µA

04

15

5002200

03

20

200

1

5

1.6

0.8

0.1

5

6

10 10 5 10

mA

µA

V

V

V

mA

mA

V/µs

MIN

MAX

MAX

MAX

MAX

MAX

MIN

MAX

MAX

MIN

MIN

50

3

70

A/µs

/ I

RRM

V

TM

V

GT

I

H

I

L

dv / dt

di / dt

R

th(j-c)

R

th(j-a)

Critical Rate of Voltage
Rise

Critical Rate of Current Rise

Thermal Resistance
Junction-Case for DC

Thermal Resistance
Junction-Amb (S=0.5 cm

2

)

ºC/W

ºC/W

V

D

= V

DRM

, R

GK

= 220Ω, T

j

= 125 ºC

T

j

= 25 ºC

V

R

= V

RRM

,

at IT = 8 Amp, tp = 380 µs, Tj = 25 ºC
VD = 12 V

DC

, R

L

= 33Ω, T

j

= 25 ºC

I

T

= 50 mA , R

GK

= 1KΩ, T

j

= 25 ºC

I

G

= 1 mA , R

GK

= 1KΩ, T

j

= 25 ºC

V

D

= 0.67 x V

DRM

, R

GK

= 220Ω,

T

j

= 125 ºC

PART NUMBER INFORMATION

V

GD

VD =V

DRM

, R

L

= 3.3 KΩ, RGK = 220Ω

T

j

= 125 ºC

FAGOR

SCR

CURRENT

CASE

VOLTAGE

SENSITIVITY

F S 04 01 B D 00

FORMING

TR

PACKAGING

Tr ≤ 100 ns, F = 60 Hz,

T

j

= 125 ºC

I

G

= 2 x I

GT