FAGOR FS0808DD, FS0808BD, FS0809MD, FS0809DD, FS0809BD Datasheet

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FAGOR FS0808DD, FS0808BD, FS0809MD, FS0809DD, FS0809BD Datasheet

 

 

 

 

 

FS08...D

 

 

SURFACE MOUNT SCR

 

 

DPAK

 

 

 

 

 

 

(Plastic)

On-State Current

 

Gate Trigger Current

 

 

 

 

 

8 Amp

 

0.5 to 15 mA

 

 

 

Off-State Voltage

 

 

 

A

200 V ÷ 600 V

 

 

K

A

These series of Silicon Controlled

 

 

 

 

R ectifier use a high performance

 

 

 

G

PNPN technology.

 

 

 

 

 

 

 

 

 

 

 

 

These parts are intended for general

 

 

 

purpose applications where high gate

 

 

 

sensitivity is required using surface

 

 

 

mount technology.

 

 

 

 

Absolute Maximum Ratings, according to IEC publication No. 134

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

 

Min.

Max.

Unit

IT(RMS)

On-state Current

180º Conduction Angle, Tc = 110 ºC

8

A

IT(AV)

Average On-state Current

Half Cycle, Θ = 180 º, TC = 110 ºC

 

5

A

ITSM

Non-repetitive On-State Current

Half Cycle, 60 Hz

 

 

73

A

ITSM

Non-repetitive On-State Current

Half Cycle, 50 Hz

 

 

70

A

I2t

Fusing Current

tp = 10ms, Half Cycle

 

 

24.5

A2s

VGRM

Peak Reverse Gate Voltage

IGR = 10 µA

 

 

5

V

IGM

Peak Gate Current

20 µs max.

 

 

4

A

PGM

Peak Gate Dissipation

20 µs max.

 

 

5

W

PG(AV)

Gate Dissipation

20ms max.

 

 

1

W

Tj

Operating Temperature

 

 

-40

+125

ºC

Tstg

Storage Temperature

 

 

-40

+150

ºC

Tsld

Soldering Temperature

10s max.

 

 

260

ºC

SYMBOL

PARAMETER

CONDITIONS

 

VOLTAGE

 

Unit

 

 

 

B

D

M

 

VDRM

Repetitive Peak Off State

RGK = 1 KΩ

200

400

600

V

VRRM

Voltage

 

 

 

 

 

Dec - 02

FS08...D

SURFACEMOUNTSCR

Electrical Characteristics

SYMBOL

IGT

IDRM / IRRM

VTM

VGT

VGD

IH

IL

dv / dt

di / dt

Rth(j-c)

Rth(j-a)

Vt0

Rd

PARAMETER

Gate Trigger Current

Off-State Leakage Current

On-state Voltage

Gate Trigger Voltage

Gate Non Trigger Voltage

Holding Current

Latching Current

Critical Rate of Voltage Rise

Critical Rate of Current Rise

Thermal Resistance

Junction-Case for DC

Thermal Resistance

Junction-Amb for DC

Threshold Voltage

Dynamic resistance

 

CONDITIONS

 

 

SENSITIVITY

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

08

 

09

 

VD = 12 VDC , RL = 33Ω. Tj = 25 ºC

 

MIN

0.5

 

2

mA

 

 

 

 

 

 

MAX

5

 

15

 

VD = VDRM ,

 

Tj = 125 ºC

 

MAX

2

 

mA

 

 

 

VR = VRRM ,

 

Tj = 25 ºC

 

MAX

5

 

µA

at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC

 

MAX

1.6

 

V

VD = 12 VDC , RL = 33Ω, Tj = 25 ºC

 

MAX

1.3

 

V

VD = VDRM , RL = 3.3KΩ,

 

MIN

0.2

 

V

Tj = 125 ºC

 

 

 

 

 

 

 

 

IT = 100 mA ,

Gate open

 

MAX

25

 

40

mA

 

 

IG = 1.2 IGT

 

Tj = 25 ºC

 

MAX

30

 

50

mA

VD = 0.67 x VDRM , Gate open

 

MIN

50

 

150

V/µs

IG = 2 x IGT Tr 100 ns, F = 60 Hz,

 

MIN

50

 

A/µs

 

Tj = 125 ºC

 

 

 

 

 

 

 

 

 

 

 

20

 

ºC/W

S = 0.5 cm2

 

 

 

 

70

 

ºC/W

Tj = 125 ºC

 

 

 

MAX

0.85

 

V

Tj = 125 ºC

 

 

 

MAX

46

 

mΩ

 

 

 

 

 

 

 

 

 

S = Cooper surface under tab

F S 08 08 B D 00 TR

FAGOR

PACKAGING

 

FORMING

SCR

CASE

VOLTAGE

CURRENT

SENSITIVITY

Dec - 02

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