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FS08...D |
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SURFACE MOUNT SCR |
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DPAK |
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(Plastic) |
On-State Current |
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Gate Trigger Current |
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8 Amp |
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0.5 to 15 mA |
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Off-State Voltage |
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A |
200 V ÷ 600 V |
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K |
A |
These series of Silicon Controlled |
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R ectifier use a high performance |
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G |
PNPN technology. |
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These parts are intended for general |
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purpose applications where high gate |
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sensitivity is required using surface |
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mount technology. |
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Absolute Maximum Ratings, according to IEC publication No. 134 |
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SYMBOL |
PARAMETER |
CONDITIONS |
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Min. |
Max. |
Unit |
IT(RMS) |
On-state Current |
180º Conduction Angle, Tc = 110 ºC |
8 |
A |
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IT(AV) |
Average On-state Current |
Half Cycle, Θ = 180 º, TC = 110 ºC |
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5 |
A |
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ITSM |
Non-repetitive On-State Current |
Half Cycle, 60 Hz |
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73 |
A |
ITSM |
Non-repetitive On-State Current |
Half Cycle, 50 Hz |
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70 |
A |
I2t |
Fusing Current |
tp = 10ms, Half Cycle |
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24.5 |
A2s |
VGRM |
Peak Reverse Gate Voltage |
IGR = 10 µA |
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5 |
V |
IGM |
Peak Gate Current |
20 µs max. |
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4 |
A |
PGM |
Peak Gate Dissipation |
20 µs max. |
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5 |
W |
PG(AV) |
Gate Dissipation |
20ms max. |
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1 |
W |
Tj |
Operating Temperature |
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-40 |
+125 |
ºC |
Tstg |
Storage Temperature |
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-40 |
+150 |
ºC |
Tsld |
Soldering Temperature |
10s max. |
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260 |
ºC |
SYMBOL |
PARAMETER |
CONDITIONS |
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VOLTAGE |
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Unit |
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B |
D |
M |
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VDRM |
Repetitive Peak Off State |
RGK = 1 KΩ |
200 |
400 |
600 |
V |
VRRM |
Voltage |
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Dec - 02
FS08...D
SURFACEMOUNTSCR
Electrical Characteristics
SYMBOL
IGT
IDRM / IRRM
VTM
VGT
VGD
IH
IL
dv / dt
di / dt
Rth(j-c)
Rth(j-a)
Vt0
Rd
PARAMETER
Gate Trigger Current
Off-State Leakage Current
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
Critical Rate of Current Rise
Thermal Resistance
Junction-Case for DC
Thermal Resistance
Junction-Amb for DC
Threshold Voltage
Dynamic resistance
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CONDITIONS |
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SENSITIVITY |
Unit |
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08 |
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09 |
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VD = 12 VDC , RL = 33Ω. Tj = 25 ºC |
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MIN |
0.5 |
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2 |
mA |
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MAX |
5 |
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15 |
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VD = VDRM , |
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Tj = 125 ºC |
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MAX |
2 |
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mA |
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VR = VRRM , |
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Tj = 25 ºC |
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MAX |
5 |
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µA |
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at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC |
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MAX |
1.6 |
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V |
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VD = 12 VDC , RL = 33Ω, Tj = 25 ºC |
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MAX |
1.3 |
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V |
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VD = VDRM , RL = 3.3KΩ, |
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MIN |
0.2 |
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V |
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Tj = 125 ºC |
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IT = 100 mA , |
Gate open |
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MAX |
25 |
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40 |
mA |
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IG = 1.2 IGT |
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Tj = 25 ºC |
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MAX |
30 |
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50 |
mA |
VD = 0.67 x VDRM , Gate open |
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MIN |
50 |
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150 |
V/µs |
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IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, |
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MIN |
50 |
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A/µs |
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Tj = 125 ºC |
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20 |
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ºC/W |
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S = 0.5 cm2 |
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70 |
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ºC/W |
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Tj = 125 ºC |
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MAX |
0.85 |
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V |
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Tj = 125 ºC |
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MAX |
46 |
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mΩ |
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S = Cooper surface under tab
F S 08 08 B D 00 TR
FAGOR |
PACKAGING |
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FORMING
SCR
CASE
VOLTAGE
CURRENT
SENSITIVITY
Dec - 02