FAGOR FT0408MI, FT0408DI, FT0408BI, FT0407MI, FT0407DI Datasheet

					FT04...I
		LOGIC LEVEL TRIAC
	IPAK
	(Plastic)	On-State Current	Gate Trigger Current
		4 Amp		< 5 mA to < 10 mA
		Off-State Voltage
	MT2	200 V ÷ 600 V
MT1		This series of TRIACs uses a high
MT2		performance PNPN technology.
G		These parts are intended for general
		purpose applications where logic
		compatible gate sensitivity is required, like
		touch dimmers, fan, electrovalve control.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL	PARAMETER	CONDITIONS		Min.	Max.	Unit
IT(RMS)	RMS On-state Current	All Conduction Angle, Tc = 110 ºC		4		A
ITSM	Non-repetitive On-State Current	Half Cycle, 60 Hz		31		A
ITSM	Non-repetitive On-State Current	Half Cycle, 50 Hz		30		A
I2t	Fusing Current	tp = 10 ms, Half Cycle		5.1		A2s
IGM	Peak Gate Current	20 µs max.			4	A
PGM	Peak Gate Dissipation	20 µs max.			3	W
PG(AV)	Gate Dissipation	20 ms max.			1	W
di/dt	Critical rate of rise of on-state current	IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz		50		A/µs
		Tj = 125 ºC
Tj	Operating Temperature			-40	+125	ºC
Tstg	Storage Temperature			-40	+150	ºC
Tsld	Soldering Temperature	4.5 mm from case, 10s max.			260	ºC
SYMBOL	PARAMETER		VOLTAGE			Unit
		B		D	M
VDRM	Repetitive Peak Off State	200	400		600	V
VRRM	Voltage

Jul - 02

FT04...I

LOGICLEVELTRIAC

Electrical Characteristics

SYMBOL	PARAMETER	CONDITIONS		Quadrant		SENSITIVITY			Unit
						07		08
IGT	Gate Trigger Current	Ω		Q1÷Q3	MAX	5		10	mA
		VD = 12 VDC , RL = 30 , Tj = 25 ºC
				Q4	MAX	7
IDRM /IRRM	Off-State Leakage Current	VD = VDRM ,	Tj = 125 ºC		MAX	1			mA
		VR = VRRM ,	Tj = 25 ºC		MAX	5			µA
Vto	Threshold Voltage	Tj = 125 ºC			MAX	0.9			V
Rd	Dynamic Resistance	Tj = 125 ºC			MAX	120			mΩ
VTM *	On-state Voltage	IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC			MAX	1.6			V
VGT	Gate Trigger Voltage	VD = 12 VDC , RL = 30Ω,	Tj = 25 ºC	Q1÷Q3	MAX	1.3			V
VGD	Gate Non Trigger Voltage	VD = VDRM , RL = 3.3KΩ,	Tj = 125 ºC	Q1÷Q3	MIN	0.2			V
IH*	Holding Current	IT = 100 mA , Gate Open	Tj = 25 ºC		MAX	10		15	mA
IL	Latching Current	IG = 1.2 IGT, Tj = 25 ºC		Q1,Q3,Q4	MAX	10		20	mA
				Q2	MAX	15		30
dv / dt*	Critical Rate of Voltage Rise	VD = 0.67 x VDRM , Gate open			MIN	20		100	V/µs
		Tj = 125 ºC
Rth(j-c)	Thermal Resistance								ºC/W
	Junction-Case for AC					2.6
Rth(j-a)	Thermal Resistance					100			ºC/W
	Junction-Ambient

(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.

PARTNUMBERINFORMATION

F T 04

07 B I 00 TU

FAGOR

PACKAGING

SCR

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Jul - 02