FAGOR FT1008MH, FT1008DH, FT1008BH Datasheet

0 (0)

FT1008.H

LOGICLEVELTRIAC

MT1

MT2

TO220-AB

On-State Current

Gate Trigger Current

10 Amp

10 mA

MT2

Off-State Voltage

 

 

200 V ÷ 600 V

 

This series of TRIACs uses a high

 

performance PNPN technology.

G

These parts are intended for general

purpose AC switching applications with

 

 

highly inductive loads.

AbsoluteMaximumRatings,accordingtoIECpublicationNo.134

SYMBOL

PARAMETER

 

CONDITIONS

 

Min.

Max.

Unit

 

 

 

 

 

 

 

 

 

 

IT(RMS)

RMS On-state Current

All Conduction Angle, TC = 105 ºC

 

10

 

 

A

 

 

 

 

 

 

 

 

 

 

ITSM

Non-repetitive On-State Current

Full Cycle, 60 Hz

 

105

 

A

ITSM

Non-repetitive On-State Current

Full Cycle, 50 Hz

 

100

 

A

 

 

 

 

 

 

 

 

 

 

I2t

Fusing Current

tp = 10 ms, Half Cycle

 

55

 

 

A2s

IGM

Peak Gate Current

20 µs max.

Tj =125ºC

 

 

 

4

A

PG(AV)

Average Gate Power Dissipation

Tj =125ºC

 

 

 

 

 

 

1

W

di/dt

Critical rate of rise of on-state current

IG = 2x IGT, tr 100ns

 

50

 

 

A/µs

 

 

f= 120 Hz, Tj =125ºC

 

 

 

 

 

Tj

Operating Temperature

 

 

 

 

 

-40

+125

ºC

Tstg

Storage Temperature

 

 

 

 

 

-40

+150

ºC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

 

 

 

VOLTAGE

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

B

 

D

 

M

 

VDRM

Repetitive Peak Off State

 

 

200

 

400

 

600

V

VRRM

Voltage

 

 

 

 

 

 

 

 

 

Jul - 02

FAGOR FT1008MH, FT1008DH, FT1008BH Datasheet

FT1008.H

LOGICLEVELTRIAC

Electrical Characteristics

SYMBOL

PARAMETER

IGT (1)

Gate Trigger Current

IDRM /IRRM

Off-State Leakage Current

Vto (2)

Threshold Voltage

Rd(2)

Dynamic Resistance

VTM (2)

On-state Voltage

VGT

Gate Trigger Voltage

VGD

Gate Non Trigger Current

IH (2)

Holding Current

IL

Latching Current

dv / dt (2)

Critical Rate of Voltage Rise

(dI/dt)c (2) Critical Rate of Current Rise

Rth(j-c) Thermal Resistance

Junction-Case

Rth(j-a) Thermal Resistance

Junction-Ambient

 

CONDITIONS

VD = 12 VDC , RL = 33Ω, Tj = 25 ºC

VD = VDRM ,

Tj = 125 ºC

VR = VRRM ,

Tj = 25 ºC

Tj = 125 ºC

 

Tj = 125 ºC

 

IT = 14 Amp, tp = 380 µs, Tj = 25 ºC VD = 12 VDC , RL = 33Ω, Tj = 25 ºC

VD = VDRM , RL = 3.3KΩ,

Tj = 125 ºC

IT = 500 mA , Gate open,

Tj = 25 ºC

IG = 1.2 IGT, Tj = 25 ºC

 

VD = 0.67 x VDRM , Gate open

Tj = 125 ºC

 

(dv/dt)c= 0.1 V/µs

Tj = 125 ºC

(dv/dt)c= 10 V/µs

Tj = 125 ºC

without snubber

Tj = 125 ºC

for AC 360º conduction angle

Quadrant

 

SENSITIVITY

Unit

 

 

 

 

 

 

08

 

Q1÷Q3

MAX

10

mA

 

MAX

1

mA

 

MAX

5

µA

 

MAX

0.85

V

 

MAX

40

mΩ

 

MAX

1.55

V

Q1÷Q3

MAX

1.3

V

Q1÷Q3

MIN

0.2

V

 

MAX

15

mA

Q1,Q3

MAX

25

mA

Q2

MAX

30

 

 

MIN

40

V/µs

 

MIN

6.5

A/ms

 

MIN

2.9

 

 

MIN

-

 

 

 

1.5

ºC/W

 

 

60

ºC/W

 

 

 

 

 

 

 

(1)Minimum IGT is guaranted at 5% of IGT max.

(2)For either polarity of electrode MT2 voltage with reference to electrode MT1.

PARTNUMBERINFORMATION

 

 

F T 10

08 B H 00 TU

FAGOR

 

 

 

 

 

 

 

 

 

 

 

 

 

PACKAGING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TRIAC

 

 

 

 

 

 

 

 

 

 

 

 

 

FORMING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CASE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

CURRENT

 

 

 

 

 

 

 

 

 

VOLTAGE

 

 

 

 

 

 

 

 

 

 

 

 

 

 

SENSITIVITY

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Jul - 02

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