FS0802.H
SENSITIVE
GATE
SCR
TO220-AB |
On-State Current |
Gate Trigger Current |
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8 Amp |
< 200 µA |
A |
Off-State Voltage |
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200 V ÷ 600 V |
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These series of Silicon Controlled |
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R ectifier use a high performance |
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PNPN technology. |
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These parts are intended for general |
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A |
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purpose applications where high gate |
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sensitivity is required using surface |
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mount technology. |
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Absolute Maximum Ratings, according to IEC publication No. 134 |
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SYMBOL |
PARAMETER |
CONDITIONS |
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Min. |
Max. |
Unit |
IT(RMS) |
On-state Current |
180º Conduction Angle, Tc = 110 ºC |
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8 |
A |
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IT(AV) |
Average On-state Current |
Half Cycle, Θ = 180 º, TC = 110 ºC |
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5 |
A |
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ITSM |
Non-repetitive On-State Current |
Half Cycle, 60 Hz |
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73 |
A |
ITSM |
Non-repetitive On-State Current |
Half Cycle, 50 Hz |
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70 |
A |
I2t |
Fusing Current |
tp = 10ms, Half Cycle |
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24.5 |
A2s |
VGRM |
Peak Reverse Gate Voltage |
IGR = 10 µA |
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8 |
V |
IGM |
Peak Gate Current |
20 µs max. |
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4 |
A |
PGM |
Peak Gate Dissipation |
20 µs max. |
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5 |
W |
PG(AV) |
Gate Dissipation |
20ms max. |
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1 |
W |
Tj |
Operating Temperature |
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-40 |
+125 |
ºC |
Tstg |
Storage Temperature |
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-40 |
+150 |
ºC |
Tsld |
Soldering Temperature |
10s max. |
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260 |
ºC |
SYMBOL |
PARAMETER |
CONDITIONS |
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VOLTAGE |
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Unit |
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B |
D |
M |
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VDRM |
Repetitive Peak Off State |
RGK = 1 KΩ |
200 |
400 |
600 |
V |
VRRM |
Voltage |
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Apr - 03
FS0802.H
SENSITIVE
GATE
SCR
Electrical Characteristics
SYMBOL |
PARAMETER |
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CONDITIONS |
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SENSITIVITY |
Unit |
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02 |
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IGT |
Gate Trigger Current |
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Ω |
. Tj = 25 ºC |
MAX |
200 |
µA |
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VD = 12 VDC , RL = 140 |
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IDRM / IRRM |
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mA |
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Off-State Leakage Current |
VD = VDRM , RGK = 220Ω |
Tj = 125 ºC |
MAX |
1 |
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VR = VRRM , |
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Tj = 25 ºC |
MAX |
5 |
µA |
VTM |
On-state Voltage |
at IT = 16 Amp, tp = 380 µs, Tj = 25 ºC |
MAX |
1.6 |
V |
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VGT |
Gate Trigger Voltage |
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Ω |
, Tj = 25 ºC |
MAX |
0.8 |
V |
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VD = 12 VDC , RL = 140 |
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VGD |
Gate Non Trigger Voltage |
VD = VDRM , RL = 3.3KΩ, |
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RGK = 220Ω |
MIN |
0.1 |
V |
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Tj = 125 ºC |
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IH |
Holding Current |
IT = 50 mA, |
RGK = 1KΩ |
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Tj = 25 ºC |
MAX |
5 |
mA |
IL |
Latching Current |
IG = 1 mA, |
RGK = 1 KΩ |
MAX |
6 |
mA |
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dv / dt |
Critical Rate of Voltage Rise |
VD = 0.67 x VDRM , RGK = 220Ω, |
MIN |
5 |
V/µs |
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Tj = 125 ºC |
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di / dt |
Critical Rate of Current Rise |
IG = 2 x IGT Tr ≤ 100 ns, F = 60 Hz, |
MIN |
50 |
A/µs |
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Tj = 125 ºC |
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Rth(j-c) |
Thermal Resistance |
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20 |
ºC/W |
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Junction-Case for DC |
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Rth(j-a) |
Thermal Resistance |
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60 |
ºC/W |
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Junction-Amb for DC |
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Vt0 |
Threshold Voltage |
Tj = 125 ºC |
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MAX |
0.85 |
V |
Rd |
Dynamic resistance |
Tj = 125 ºC |
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MAX |
46 |
mΩ |
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PART
NUMBER
INFORMATION
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F S 08 |
02 B H 00 TR |
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FAGOR |
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PACKAGING |
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SCR |
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FORMING |
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CASE |
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CURRENT |
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VOLTAGE |
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SENSITIVITY |
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Apr - 03
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