FAGOR FT0816DD, FT0816BD, FT0814MD, FT0814DD, FT0814BD Datasheet

FT08...D

SURFACEMOUNTTRIAC

	DPAK
	(Plastic)	On-State Current	Gate Trigger Current
		8 Amp	< 5 mA to < 50 mA
		Off-State Voltage
	MT2	200 V ÷ 600 V
MT1	MT2	This series of TRIACs uses a high performance
		PNPN technology.
	G	These devices are intended for AC control
		applications using surface mount technology.
		The high commutation performances combined with
		high sensitivity, make them perfect in all applications
		like solid state relays, home appliances, power tools,
		small motor drives...
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL	PARAMETER	CONDITIONS	Min.	Max.	Unit
IT(RMS)	RMS On-state Current	All Conduction Angle, TC = 110 ºC	8		A
ITSM	Non-repetitive On-State Current	Half Cycle, 60 Hz	84		A
ITSM	Non-repetitive On-State Current	Half Cycle, 50 Hz	80		A
I2t	Fusing Current	tp = 10 ms, Half Cycle	36		A2s
IGM	Peak Gate Current	20 µs max.		4	A
PGM	Peak Gate Dissipation	20 µs max.		10	W
PG(AV)	Gate Dissipation	20 ms max.		1	W
di/dt	Critical rate of rise of on-state current	IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz 50			A/µs
		Tj = 125 ºC
Tj	Operating Temperature Range		-40	+125	ºC
Tstg	Storage Temperature Range		-40	+150	ºC
TL	Lead Temperature for soldering	10s max.		260	ºC
SYMBOL	PARAMETER	VOLTAGE			Unit
		B	D	M
VDRM	Repetitive Peak Off State	200	400	600	V
VRRM	Voltage

Jun - 02

FT08...D

SURFACEMOUNTTRIAC

Electrical Characteristics

SYMBOL	PARAMETER	CONDITIONS		Quadrant			SENSITIVITY				Unit
						07	08	11	14	16
IGT (1)	Gate Trigger Current	VD = 12 VDC , RL = 30Ω		Q1÷Q3	MAX	5	10	25	35	50	mA
		Tj = 25 ºC				7					mA
IDRM /IRRM	Off-State Leakage Current	VR = VRRM ,	Tj = 125 ºC		MAX			1			mA
			Tj = 25 ºC		MAX			5			µA
Vto (2)	Threshold Voltage	Tj = 125 ºC			MAX			0.85			V
Rd(2)	Dynamic Resistance	Tj = 125 ºC			MAX			60			mΩ
VTM (2)	On-state Voltage	IT = 11 Amp, tp = 380 µs,	Tj = 25 ºC		MAX			1.55			V
VGT	Gate Trigger Voltage	Ω	Tj = 25 ºC	Q1÷Q3	MAX			1.3			V
		VD = 12 VDC , RL = 30 ,
VGD	Gate Non Trigger Voltage	VD = VDRM , RL = 3.3KΩ,	Tj = 125 ºC	Q1÷Q3	MIN			0.2			V
IH (2)	Holding Current	IT = 100 mA , Gate open,	Tj = 25 ºC		MAX	10	15	25	35	50	mA
IL	Latching Current	GT		Q1,Q3	MAX	10	20	25	50	80	mA
		IG = 1.2 I , Tj = 25 ºC
				Q2	MAX	15	30	50	60	80
dv / dt (2)	Critical Rate of Voltage Rise	VD = 0.67 x VDRM , Gate open			MIN	20	100	200	400	250	V/µs
		Tj = 125 ºC
(dI/dt)c (2)	Critical Rate of Current Rise	(dv/dt)c= 0.1 V/µs	Tj = 125 ºC		MIN	3.5	5.4	9	9	9	A/ms
		(dv/dt)c= 10 V/µs	Tj = 125 ºC		MIN	1.8	2.8	4.5	4.5	4.5
Rth(j-c)		without snubber	Tj = 125 ºC		MIN	-	-	-	4.5	4.5
	Thermal Resistance							1.6			ºC/W
	Junction-Case
Rth(j-a)	Thermal Resistance							70			ºC/W
	Junction-Ambient

(1)Minimum IGT is guaranted at 5% of IGT max.

(2)For either polarity of electrode MT2 voltage with reference to electrode MT1.

PARTNUMBERINFORMATION

F T 08

08 B D 00 TR

FAGOR

PACKAGING

SCR

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Jun - 02