FAGOR FT0414MI, FT0414DI, FT0414BI, FT0411MI, FT0411DI Datasheet

FT04...I

HIGHCOMMUTATIONTRIAC

	IPAK
	(Plastic)	On-State Current	Gate Trigger Current
		4 Amp	< 25 mA to < 35 mA
		Off-State Voltage
	MT2	200 V ÷ 600 V
MT1
MT2		This series of TRIACs uses a high
G		performance PNPN technology.
		These parts are intended for general
		purpose applications.
Absolute Maximum Ratings, according to IEC publication No. 134
SYMBOL	PARAMETER	CONDITIONS	Min.	Max.	Unit
IT(RMS)	RMS On-state Current	All Conduction Angle, Tc = 110 ºC		4	A
ITSM	Non-repetitive On-State Current	Half Cycle, 60 Hz		31	A
ITSM	Non-repetitive On-State Current	Half Cycle, 50 Hz		30	A
I2t	Fusing Current	tp = 10 ms, Half Cycle		5.1	A2s
IGM	Peak Gate Current	20 µs max.		4	A
PGM	Peak Gate Dissipation	20 µs max.		3	W
PG(AV)	Gate Dissipation	20 ms max.		1	W
di/dt	Critical rate of rise of on-state current	IG = 2 x IGT Tr ≤ 100 ns, F = 120 Hz		50	A/µs
		Tj = 125 ºC
Tj	Operating Temperature		-40	+125	ºC
Tstg	Storage Temperature		-40	+150	ºC
Tsld	Soldering Temperature	4.5 mm from case, 10s max.		260	ºC
SYMBOL	PARAMETER		VOLTAGE		Unit
		B	D	M
VDRM	Repetitive Peak Off State	200	400	600	V
VRRM	Voltage

Apr - 03

FT04...I

HIGHCOMMUTATIONTRIAC

Electrical Characteristics

SYMBOL	PARAMETER	CONDITIONS		Quadrant		SENSITIVITY			Unit
						11		14
IGT	Gate Trigger Current	Ω	Tj = 25 ºC	Q1÷Q3	MAX	25		35	mA
		VD = 12 VDC , RL = 30 ,
IDRM /IRRM	Off-State Leakage Current	VD = VDRM ,	Tj = 125 ºC		MAX	1			mA
		VR = VRRM ,	Tj = 25 ºC		MAX	5			µA
Vto	Threshold Voltage	Tj = 125 ºC			MAX	0.9			V
Rd	Dynamic Resistance	Tj = 125 ºC			MAX	120			mΩ
VTM *	On-state Voltage	IT = 5.5 Amp, tp = 380 µs, Tj = 25 ºC			MAX	1.6			V
VGT	Gate Trigger Voltage	Ω	Tj = 25 ºC	Q1÷Q3	MAX	1.3			V
		VD = 12 VDC , RL = 30 ,
VGD	Gate Non Trigger Voltage	VD = VDRM , RL = 3.3KΩ,	Tj = 125 ºC	Q1÷Q3	MIN	0.2			V
IH *	Holding Current	IT = 100 mA , Gate Open	Tj = 25 ºC		MAX	25		35	mA
IL	Latching Current	IG = 1.2 IGT, Tj = 25 ºC		Q1, Q3	MAX	25		50	mA
	Critical Rate of Voltage Rise			Q2	MAX	50		60
dv / dt*		VD = 0.67 x VDRM , Gate open			MIN	200		400	V/µs
		Tj = 110 ºC
Rth(j-c)	Thermal Resistance								ºC/W
	Junction-Case for AC					2.6
Rth(j-a)	Thermal Resistance					100			ºC/W
	Junction-Ambient

(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.

PARTNUMBERINFORMATION

F T 04

11 B I 00 TU

FAGOR

PACKAGING

SCR

FORMING

CASE

CURRENT

VOLTAGE

SENSITIVITY

Apr - 03