Main product characteristics
IF(AV) |
2 x 10 A |
VRRM |
45 V |
Tj (max) |
150° C |
VF(max) |
0.5 V |
Features and benefits
■Low forward voltage drop meaning very small conduction losses
■Low switching losses allowing high frequency operation
■Insulated package: TO-220FPAB Insulating voltage = 2000 V DC Capacitance = 12 pF
■Avalanche capability specified
Description
Dual center tap Schottky rectifiers designed for high frequency switched mode power supplies and DC to DC converters.
These devices are intended for use in low voltage, high frequency inverters, free-wheeling and polarity protection applications.
A1 |
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K |
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A2 |
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A2 |
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A1 |
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A1 |
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TO-220FPAB |
TO-220AB |
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STPS20L45CFP |
STPS20L45CT |
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A2 |
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A1 |
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D2PAK |
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STPS20L45CG |
March 2007 |
Rev 4 |
1/9 |
www.st.com
Characteristics |
STPS20L45C |
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Table 1. |
Absolute Ratings (limiting values) |
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Symbol |
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Parameter |
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Value |
Unit |
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VRRM |
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Repetitive peak reverse voltage |
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45 |
V |
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IF(RMS) |
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RMS forward voltage |
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30 |
A |
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2 |
Tc =135° C |
Per diode |
10 |
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IF(AV) |
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Average forward |
TO-220AB / D PAK |
δ = 0.5 |
Per device |
20 |
A |
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current |
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TO-220FPAB |
Tc = 115° C |
Per diode |
10 |
A |
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δ = 0.5 |
Per device |
20 |
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IFSM |
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Surge non repetitive forward current |
tp = 10 ms Sinusoidal |
180 |
A |
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IRRM |
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Peak repetitive reverse current |
tp = 2 µs square F = 1 kHz |
1 |
A |
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IRSM |
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Non repetitive peak reverse current |
tp = 100 µs square |
2 |
A |
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PARM |
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Repetitive peak avalanche power |
tp = 1 µs Tj = 25°C |
4000 |
W |
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Tstg |
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Storage temperature range |
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-65 to + 150 |
°C |
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T |
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Maximum operating junction temperature (1) |
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150 |
°C |
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j |
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dV/dt |
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Critical rate of rise of reverse voltage |
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10000 |
V/µs |
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1. |
dPtot |
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1 |
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dTj |
< Rth(j – a) condition to avoid thermal runaway for a diode on its own heatsink |
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Table 2. |
Thermal resistances |
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Symbol |
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Parameter |
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Value |
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Unit |
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Per diode |
4.5 |
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Rth(j-c) |
Junction to case |
TO-220FPAB |
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Total |
3.5 |
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°C/W |
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Coupling |
2.5 |
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TO-220AB / D2PAK |
Per diode |
2.2 |
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Rth(j-c) |
Junction to case |
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Total |
1.3 |
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°C/W |
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Coupling |
0.3 |
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When the diodes 1 and 2 are used simultaneously : |
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Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c). |
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Table 3. |
Static electrical characteristics (per diode) |
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Symbol |
Parameter |
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Test Conditions |
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Min. |
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Typ. |
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Max. |
Unit |
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IR(1) |
Reverse leakage current |
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Tj = 25° C |
VR = VRRM |
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0.2 |
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mA |
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Tj = 125° C |
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65 |
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130 |
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mA |
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Tj = 25° C |
IF = 10 A |
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0.55 |
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VF(1) |
Forward voltage drop |
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Tj = 125° C |
IF = 10 A |
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0.44 |
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0.5 |
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V |
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Tj = 25° C |
IF = 20 A |
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0.73 |
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Tj = 125° C |
IF = 20 A |
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0.62 |
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0.72 |
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1. Pulse test: tp = 380 µs, δ < 2% |
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To evaluate the conduction losses use the following equation:
P = 0.28 x IF(AV) + 0.022 IF2(RMS)
2/9
STPS20L45C |
Characteristics |
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Figure 1. Average forward power |
Figure 2. Average forward current versus |
dissipation versus average forward |
ambient temperature |
current (per diode) |
(δ = 0.5, per diode) |
PF(AV)(W) |
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12 |
IF(AV)(A) |
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8 |
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δ = 0.1 |
δ = 0.2 |
δ = 0.5 |
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11 |
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Rth(j-a)=Rth(j-c) |
TO-220AB / TO-247 |
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10 |
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δ = 0.05 |
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6 |
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TO-220FPAB |
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5 |
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Rth(j-a)=15°C/W |
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7 |
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δ = 1 |
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4 |
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2 |
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T |
3 |
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T |
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1 |
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2 |
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IF(AV)(A) |
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δ=tp/T |
tp |
1 |
δ=tp/T |
tp |
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Tamb(°C) |
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0 |
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0 |
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0 |
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4 |
6 |
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10 |
12 |
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0 |
25 |
50 |
75 |
100 |
125 |
150 |
Figure 3. Normalized avalanche power |
Figure 4. Normalized avalanche power |
derating versus pulse duration |
derating versus junction |
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temperature |
PARM(tp) |
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PARM(tp) |
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PARM(1µs) |
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PARM(25°C) |
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1 |
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1.2 |
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1 |
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0.1 |
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0.8 |
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0.6 |
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0.01 |
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0.4 |
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0.2 |
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tp(µs) |
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Tj(°C) |
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0.001 |
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0 |
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0.01 |
0.1 |
1 |
10 |
100 |
1000 |
25 |
50 |
75 |
100 |
125 |
150 |
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Figure 5. Non repetitive surge peak forward Figure 6. |
Non repetitive surge peak forward |
current versus overload duration |
current versus overload duration |
(maximum values, per diode, |
(maximum values, per diode, |
TO-220AB, D2PAK) |
TO-220FPAB) |
IM(A) |
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IM(A) |
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140 |
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100 |
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120 |
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90 |
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80 |
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100 |
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70 |
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80 |
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60 |
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Tj=25°C |
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TC=25°C |
50 |
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60 |
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TC=75°C |
40 |
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TC=50°C |
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40 |
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30 |
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IM |
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TC=125°C |
20 |
IM |
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TC=100°C |
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20 |
t |
t(s) |
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t(s) |
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δ=0.5 |
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0 |
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0 |
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1E-3 |
1E-2 |
1E-1 |
1E+0 |
1E-3 |
1E-2 |
1E-1 |
1E+0 |
3/9