ST TN1215, TS1220, TYN612, TYN812, TYN1012 User Manual

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TN1215, TS1220 TYN612, TYN812, TYN1012

Sensitive and standard 12 A SCRs

Features

■On-state rms current, IT(RMS) 12 A

■Repetitive peak off-state voltage, VDRM/VRRM 600 to 1000 V

■Triggering gate current, IGT 0.2 to 15 mA

Description

Available either in sensitive (TS1220) or standard (TN1215 / TYNx12) gate triggering levels, the 12 A SCR series is suitable to fit all modes of control, found in applications such as overvoltage

crowbar protection, motor control circuits in power tools and kitchen aids, inrush current limiting circuits, capacitive discharge ignition and voltage regulation circuits.

Available in through-hole or surface-mount packages, they provide an optimized performance in a limited space area.

A A

G K A

DPAK

A TN1215-xxxB TS1220-xxxB

K A A

D2PAK

TN1215-xxxG

TS1220-xxxG K

IPAK

A TN1215-xxxH

TS1220-xxxH

K	A	A
	A	G
		G

TO-220AB TYNx12RG

TYNx12TRG

TO-220AB

TS1220-xxxT

Table 1.	Device summary
Order code			Voltage (xxx) VDRM/VRRM				Sensitivity	Package
Order code		600 V	700 V		800 V	1000 V	IGT	Package
		600 V	700 V		800 V	1000 V	IGT
TN1215-xxxB		X			X		15 mA	DPAK

TN1215-xxxG		X			X		15 mA	D2PAK
TN1215-xxxH		X			X		15 mA	IPAK

TS1220-xxxB		X	X				0.2 mA	DPAK

TS1220-xxxH		X					0.2 mA	IPAK

TS1220-xxxT		X					0.2 mA	TO-220AB

TYNx12RG		X			X	X	15 mA	TO-220AB

TYNx12TRG		X			X	X	5 mA	TO-220AB

September 2011				Doc ID 7475 Rev 7				1/13

www.st.com

Characteristics			TN1215, TS1220, TYN612, TYN812, TYN1012

1	Characteristics
Table 2.	Absolute ratings (limiting values)

							Value
Symbol	Parameter								Unit
Symbol	Parameter				TN1215-G			TN1215-B/-H	Unit
					TN1215-G			TN1215-B/-H
					TYNx12			TS1220-B/-H/T

IT(RMS)	RMS on-state current (180 °Conduction angle)			Tc = 105 °C		12			A
IT(AV)	Average on-state current (180 °Conduction angle)			Tc = 105 °C		8			A
ITSM	Non repetitive surge peak on-state	tp = 8.3 ms		Tj = 25 °C	145			115	A
ITSM	current	tp = 10 ms		Tj = 25 °C	140			110	A
		tp = 10 ms			140			110
I²t	I²t Value for fusing	tp = 10 ms		Tj = 25 °C	98			60	A2S
dI/dt	Critical rate of rise of on-state	F = 60 Hz		Tj = 125 °C		50			A/µs
dI/dt	current IG = 2 x IGT, tr ≤ 100 ns	F = 60 Hz		Tj = 125 °C		50			A/µs
	current IG = 2 x IGT, tr ≤ 100 ns
IGM	Peak gate current	tp = 20 µs		Tj = 125 °C		4			A
PG(AV)	Average gate power dissipation			Tj = 125 °C		1			W
Tstg	Storage junction temperature range					- 40 to + 150			°C
Tj	Operating junction temperature range					- 40 to + 125
VRGM	Maximum peak reverse gate voltage					5			V
VRGM	(for TN1215 and TYNx12 only)					5			V
Table 3.	Sensitive electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol	Test conditions							TS1220	Unit

IGT	VD = 12 V, RL = 140 Ω				MAX.		200		µA
VGT	VD = 12 V, RL = 140 Ω				MAX.		0.8		V
VGT					MAX.		0.8		V
VGD	VD = VDRM, RL = 3.3 kΩ, RGK = 220 Ω		Tj = 125 °C		MIN.		0.1		V
VRG	IRG = 10 µA				MIN.		8		V
IH	IT = 50 mA, RGK = 1 kΩ				MAX.		5		mA
IL	IG = 1 mA, RGK = 1 kΩ				MAX.		6		mA
dV/dt	VD = 65 % VDRM, RGK = 220 Ω		Tj = 125 °C		MIN.		5		V/µs
VTM	ITM = 24 A, tp = 380 µs		Tj = 25 °C		MAX.		1.6		V
Vt0	Threshold voltage		Tj = 125 °C		MAX.		0.85		V
Rd	Dynamic resistance		Tj = 125 °C		MAX.		30		mΩ
IDRM	VDRM = VRRM, RGK = 220 Ω		Tj = 25 °C		MAX.		5		µA
IRRM	VDRM = VRRM, RGK = 220 Ω		Tj = 125 °C		MAX.		2		mA
IRRM			Tj = 125 °C				2		mA

2/13	Doc ID 7475 Rev 7

TN1215, TS1220, TYN612, TYN812, TYN1012

Characteristics

Table 4.

Standard electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

TN1215

TYN

Unit

B / H

x12T

x12

IGT

MIN.

0.5

RL = 33 Ω

VD = 12 V

MAX.

VGT

MAX.

1.3

VGD

VD = VDRM

RL = 3.3 kΩ

Tj = 125 °C

MIN.

0.2

IT = 500 mA

Gate open

MAX.

IG = 1.2 IGT

MAX.

dV/dt

VD = 67 % VDRM Gate open

Tj =125 °C

MIN.

200

V/µs

VTM

ITM = 24 A

tp = 380 µs

Tj = 25 °C

MAX.

1.6

Vt0

Threshold voltage

Tj = 125 °C

MAX.

0.85

Dynamic resistance

Tj = 125 °C

MAX.

mΩ

IDRM

VDRM = VRRM

Tj = 25 °C

MAX.

µA

IRRM

Tj = 125 °C

Table 5.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (DC)

1.3

°C/W

S(1) = 0.5 cm²

DPAK

Rth(j-a)

Junction to ambient (DC)

S(1) = 1 cm²

D2PAK

°C/W

IPAK

100

TO-220AB

1. S = Copper surface under tab

Figure 1. Maximum average power dissipation versus average on-state current

Figure 2. Average and DC on-state current versus case temperature

P(W)										IT(AV)(A)
12										IT(AV)(A)
12										14
										14
11	α = 180°												D.C.
	α = 180°
10										12
9										10
8										10
8													α = 180°
7													α = 180°
7										8
										8
6
5										6
4										4
3								360°		4
3								360°
2										2
1				IT(AV)(A)				α					Tcase(°C)
0				IT(AV)(A)				α		0			Tcase(°C)
										0
										0	25	50	75	100	125
0	1	2	3	4	5	6	7	8	9	0	25	50	75	100	125
0	1	2	3	4	5	6	7	8	9

Doc ID 7475 Rev 7

3/13

ST TN1215, TS1220, TYN612, TYN812, TYN1012 User Manual

Characteristics	TN1215, TS1220, TYN612, TYN812, TYN1012

Figure 3. Average and D.C. on-state current	Figure 4. Relative variation of thermal
versus ambient temperature	impedance junction to case versus
(DPAK)	pulse duration

IT(AV)(A)						K=[Zth(j-c)/Rth(j-c)]
3.0						K=[Zth(j-c)/Rth(j-c)]
3.0						1.0
						1.0
			Device mounted on FR4 with
2.5			recommended pad layout
		D.C.
2.0		D2PAK				0.5
1.5
α = 180°
1.0	DPAK
1.0						0.2
						0.2
0.5								tp(s)
		Tamb(°C)						tp(s)
0.0		Tamb(°C)				0.1
						0.1
						1E-3	1E-2	1E-1	1E+0
0	25	50	75	100	125	1E-3	1E-2	1E-1	1E+0
0	25	50	75	100	125

Figure 5. Relative variation of thermal impedance junction to ambient versus pulse duration (DPAK)

Figure 6. Relative variation of gate trigger and holding current versus junction temperature for TS1220 series

1.00	K=[Zth(j-a)/Rth(j-a)]		IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
1.00			IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
			2.0
		Device mounted on FR4 with	1.8


		recommended pad layout

		DPAK				1.6		IGT
		DPAK				1.4		IGT
						1.4
		D2PAK				1.2
0.10			TO-220AB / IPAK			1.0							IH & IL
			TO-220AB / IPAK
						0.8
						0.8							RGK = 1kΩ
						0.6
						0.4
		tp(s)				0.2				Tj(°C)
0.01		tp(s)				0.0				Tj(°C)
						0.0
						-40	-20	0	20	40	60	80	100	120	140
1E-2	1E-1	1E+0	1E+1	1E+2	5E+2	-40	-20	0	20	40	60	80	100	120	140
1E-2	1E-1	1E+0	1E+1	1E+2	5E+2

Figure 7. Relative variation of gate trigger	Figure 8. Relative variation of holding
and holding current versus junction	current versus gate-cathode
temperature	resistance (typical values)

IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]										IH[RGK] / IH[RGK=1kΩ]
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]										5.0
2.4										5.0
2.4											TS1220 Series		Tj = 25°C
										4.5			Tj = 25°C
2.2
2.2						TN1215 and TYNx12 Series
2.0						TN1215 and TYNx12 Series
2.0										4.0
1.8		IGT								3.5
1.6										3.5
1.6
1.4										3.0
1.4
1.2										2.5
1.0										2.0
0.8							IH & IL			2.0
0.8							IH & IL			1.5
0.6										1.5
0.6
0.4										1.0
0.2				Tj(°C)						0.5
0.0				Tj(°C)						0.5	RGK(kΩ)
0.0										0.0	RGK(kΩ)
-40	-20	0	20	40	60	80	100	120	140	0.0
-40	-20	0	20	40	60	80	100	120	140	1E-2	1E-1	1E+0	1E+1
										1E-2	1E-1	1E+0	1E+1

4/13	Doc ID 7475 Rev 7

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