Samsung K4F170812D-F, K4F170811D-B, K4F160811D-F, K4F160811D-B, K4F170812D-B Datasheet

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K4F170811D, K4F160811D

CMOS DRAMK4F170812D, K4F160812D

This is a family of 2,097,152 x 8 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells

within the same row. Power supply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power con-

sumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-

before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version.

This 2Mx8 Fast Page Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power

consumption and high reliability. It may be used as graphic memory unit for microcomputer, personal computer and portable machines.

• Part Identification

- K4F170811D-B(F) (5V, 4K Ref.)

- K4F160811D-B(F) (5V, 2K Ref.)

- K4F170812D-B(F) (3.3V, 4K Ref.)

- K4F160812D-B(F) (3.3V, 2K Ref.)

• Fast Page Mode operation

• CAS-before-RAS refresh capability

• RAS-only and Hidden refresh capability

• Self-refresh capability (L-ver only)

• Fast parallel test mode capability

• TTL(5V)/LVTTL(3.3V) compatible inputs and outputs

• Early Write or output enable controlled write

• JEDEC Standard pinout

• Available in Plastic SOJ and TSOP(II) packages

• Single +5V±10% power supply (5V product)

• Single +3.3V±0.3V power supply (3.3V product)

Control

Clocks

RAS

CAS

Vcc

Vss

DQ0

DQ7

A0-A11

(A0 - A10)*1

A0 - A8

(A0 - A9)*1

Memory Array

2,097,152 x 8

Cells

SAMSUNG ELECTRONICS CO., LTD. reserves the right to

change products and specifications without notice.

2M x 8Bit CMOS Dynamic RAM with Fast Page Mode

DESCRIPTION

FEATURES

FUNCTIONAL BLOCK DIAGRAM

• Refresh Cycles

Part

NO.

VCC

Refresh

cycle

Refresh period

Normal L-ver

K4F170811D 5V

4K 64ms

128ms

K4F170812D 3.3V

K4F160811D 5V

2K 32ms

K4F160812D 3.3V

• Performance Range

Speed

tRAC tCAC tRC tPC

Remark

-50 50ns 13ns 90ns 35ns 5V/3.3V

-60 60ns 15ns 110ns 40ns 5V/3.3V

• Active Power Dissipation

Speed

3.3V 5V

4K 2K 4K 2K

-50 324 396 495 605

-60 288 360 440 550

Unit : mW

Sense Amps & I/O

Data out

Buffer

Data in

Buffer

Note) *1 : 2K Refresh

Col. Address Buffer

Row Address Buffer

Refresh Counter

Refresh Control

Refresh Timer

Column Decoder

Row Decoder

VBB Generator

K4F170811D, K4F160811D

CMOS DRAMK4F170812D, K4F160812D

VCC

DQ0

DQ1

DQ2

DQ3

RAS

*A11(N.C)

A10

VCC

VSS

DQ7

DQ6

DQ5

DQ4

CAS

VSS

PIN CONFIGURATION (Top Views)

Pin Name Pin Function

A0 - A11 Address Inputs (4K Product)

A0 - A10 Address Inputs (2K Product)

DQ0 - 7 Data In/Out

VSS Ground

RAS Row Address Strobe

CAS Column Address Strobe

W Read/Write Input

OE Data Output Enable

VCC

Power(+5V)

Power(+3.3V)

N.C No Connection (2K Ref. product)

VCC

DQ0

DQ1

DQ2

DQ3

RAS

*A11(N.C)

A10

VCC

VSS

DQ7

DQ6

DQ5

DQ4

CAS

VSS

*A11 is N.C for K160811(2)D(5V/3.3V, 2K Ref. product)

B : 300mil 28 SOJ

F : 300mil 28 TSOP II

• K4F17(6)0811(2)D-B

• K4F17(6)0811(2)D-F

K4F170811D, K4F160811D

CMOS DRAMK4F170812D, K4F160812D

ABSOLUTE MAXIMUM RATINGS

* Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted

to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for

extended periods may affect device reliability.

Parameter Symbol

Rating

Units

3.3V 5V

Voltage on any pin relative to VSS VIN,VOUT -0.5 to +4.6 -1.0 to +7.0 V

Voltage on VCC supply relative to VSS VCC -0.5 to +4.6 -1.0 to +7.0 V

Storage Temperature Tstg -55 to +150 -55 to +150 °C

Power Dissipation PD 1 1 W

Short Circuit Output Current IOS Address 50 50 mA

RECOMMENDED OPERATING CONDITIONS (Voltage referenced to Vss, TA= 0 to 70°C)

*1 : VCC+1.3V/15ns(3.3V), VCC+2.0V/20ns(5V), Pulse width is measured at VCC

*2 : -1.3V/15ns(3.3V), -2.0V/20ns(5V), Pulse width is measured at VSS

Parameter Symbol

3.3V 5V

Units

Min Typ Max Min Typ Max

Supply Voltage VCC 3.0 3.3 3.6 4.5 5.0 5.5 V

Ground VSS 0 0 0 0 0 0 V

Input High Voltage VIH 2.0 -

VCC+0.3

2.4 -

VCC+1.0

Input Low Voltage VIL

-0.3

- 0.8

-1.0

- 0.8 V

DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted.)

Max Parameter Symbol Min Max Units

3.3V

Input Leakage Current (Any input 0≤VIN≤VIN+0.3V,

all other input pins not under test=0 Volt)

II(L) -5 5 uA

Output Leakage Current

(Data out is disabled, 0V≤VOUT≤VCC)

IO(L) -5 5 uA

Output High Voltage Level(IOH=-2mA) VOH 2.4 - V

Output Low Voltage Level(IOL=2mA) VOL - 0.4 V

Input Leakage Current (Any input 0≤VIN≤VIN+0.5V,

all other input pins not under test=0 Volt)

II(L) -5 5 uA

Output Leakage Current

(Data out is disabled, 0V≤VOUT≤VCC)

IO(L) -5 5 uA

Output High Voltage Level(IOH=-5mA) VOH 2.4 - V

Output Low Voltage Level(IOL=4.2mA) VOL - 0.4 V

K4F170811D, K4F160811D

CMOS DRAMK4F170812D, K4F160812D

*Note :

ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open.

ICC is specified as an average current. In ICC1, ICC3 and ICC6 address can be changed maximum once while RAS=VIL. In ICC4,

address can be changed maximum once within one fast page mode cycle time, tPC.

DC AND OPERATING CHARACTERISTICS (Continued)

ICC1* : Operating Current (RAS and CAS cycling @tRC=min.)

ICC2 : Standby Current (RAS=CAS=W=VIH)

ICC3* : RAS-only Refresh Current (CAS=VIH, RAS cycling @tRC=min.)

ICC4* : Fast Page Mode Current (RAS=VIL, CAS, Address cycling @tPC=min.)

ICC5 : Standby Current (RAS=CAS=W=VCC-0.2V)

ICC6* : CAS-Before-RAS Refresh Current (RAS and CAS cycling @tRC=min.)

ICC7 : Battery back-up current, Average power supply current, Battery back-up mode

Input high voltage(VIH)=VCC-0.2V, Input low voltage(VIL)=0.2V, CAS=0.2V,

DQ=Don′t care, TRC=31.25us(4K/L-ver), 62.5us(2K/L-ver),

TRAS=TRASmin~300ns

ICCS : Self Refresh Current

RAS=CAS=VIL, W=OE=A0 ~ A11=VCC-0.2V or 0.2V,

DQ0 ~ DQ7=VCC-0.2V, 0.2V or Open

Symbol Power Speed

Max

Units

K4F170812D K4F160812D K4F170811D K4F160811D

ICC1 Don′t care

-50

-60

110

100

110

100

ICC2

Normal

Don′t care

ICC3 Don′t care

-50

-60

110

100

110

100

ICC4 Don′t care

-50

-60

ICC5

Normal

Don′t care

0.5

200

0.5

200

250

ICC6 Don′t care

-50

-60

110

100

110

100

ICC7 L Don′t care 250 250 300 300 uA

ICCS L Don′t care 200 200 250 250 uA

K4F170811D, K4F160811D

CMOS DRAMK4F170812D, K4F160812D

CAPACITANCE (TA=25°C, VCC=5V or 3.3V, f=1MHz)

Parameter Symbol Min Max Units

Input capacitance [A0 ~ A11] CIN1 - 5 pF

Input capacitance [RAS, CAS, W, OE] CIN2 - 7 pF

Output capacitance [DQ0 - DQ7] CDQ - 7 pF

Test condition (5V device) : VCC=5.0V±10%, Vih/Vil=2.4/0.8V, Voh/Vol=2.4/0.4V

Parameter Symbol

-50 -60

Units Notes

Min Max Min Max

Random read or write cycle time

tRC

90 110 ns

Read-modify-write cycle time

tRWC

133 155 ns

Access time from RAS

tRAC

50 60 ns 3,4,10

Access time from CAS

tCAC

13 15 ns 3,4,5

Access time from column address

tAA

25 30 ns 3,10

CAS to output in Low-Z

tCLZ

0 0 ns 3

Output buffer turn-off delay

tOFF

0 13 0 15 ns 6

Transition time (rise and fall)

3 50 3 50 ns 2

RAS precharge time

tRP

30 40 ns

RAS pulse width

tRAS

50 10K 60 10K ns

RAS hold time

tRSH

13 15 ns

CAS hold time

tCSH

50 60 ns

CAS pulse width

tCAS

13 10K 15 10K ns

RAS to CAS delay time

tRCD

20 37 20 45 ns 4

RAS to column address delay time

tRAD

15 25 15 30 ns 10

CAS to RAS precharge time

tCRP

5 5 ns

Row address set-up time

tASR

0 0 ns

Row address hold time

tRAH

10 10 ns

Column address set-up time

tASC

0 0 ns

Column address hold time

tCAH

10 10 ns

Column address to RAS lead time

tRAL

25 30 ns

Read command set-up time

tRCS

0 0 ns

Read command hold time referenced to CAS

tRCH

0 0 ns 8

Read command hold time referenced to RAS

tRRH

0 0 ns 8

Write command hold time

tWCH

10 10 ns

Write command pulse width

tWP

10 10 ns

Write command to RAS lead time

tRWL

13 15 ns

Write command to CAS lead time

tCWL

13 15 ns

AC CHARACTERISTICS (0°C≤TA≤70°C, See note 1,2)

Test condition (3.3V device) : VCC=3.3V±0.3V, Vih/Vil=2.0/0.8V, Voh/Vol=2.0/0.8V

K4F170811D, K4F160811D

CMOS DRAMK4F170812D, K4F160812D

AC CHARACTERISTICS (Continued)

Parameter Symbol

-50 -60

Units Note

Min Max Min Max

Data set-up time

tDS

0 0 ns 9

Data hold time

tDH

10 10 ns 9

Refresh period (2K, Normal)

tREF

32 32 ms

Refresh period (4K, Normal)

tREF

64 64 ms

Refresh period (L-ver)

tREF

128 128 ms

Write command set-up time

tWCS

0 0 ns 7

CAS to W delay time

tCWD

36 40 ns 7

RAS to W delay time

tRWD

73 85 ns 7

Column address to W delay time

tAWD

48 55 ns 7

CAS precharge to W delay time

tCPWD

53 60 ns

CAS set-up time (CAS -before-RAS refresh)

tCSR

5 5 ns

CAS hold time (CAS -before-RAS refresh)

tCHR

10 10 ns

RAS to CAS precharge time

tRPC

5 5 ns

Access time from CAS precharge

tCPA

30 35 ns 3

Fast Page cycle time

tPC

35 40 ns

Fast Page read-modify-write cycle time

tPRWC

76 85 ns

CAS precharge time (Fast Page cycle)

tCP

10 10 ns

RAS pulse width (Fast Page cycle)

tRASP

50 200K 60 200K ns

RAS hold time from CAS precharge

tRHCP

30 35 ns

OE access time

tOEA

13 15 ns

OE to data delay

tOED

13 15 ns

Output buffer turn off delay time from OE

tOEZ

0 13 0 15 ns 6

OE command hold time

tOEH

13 15 ns

Write command set-up time (Test mode in)

tWTS

10 10 ns 11

Write command hold time (Test mode in)

tWTH

10 10 ns 11

W to RAS precharge time(C-B-R refresh)

tWRP

10 10 ns

W to RAS hold time(C-B-R refresh)

tWRH

10 10 ns

RAS pulse width (C-B-R self refresh)

tRASS

100 100 us 13,14,15

RAS precharge time (C-B-R self refresh)

tRPS

90 110 ns 13,14,15

CAS hold time (C-B-R self refresh)

tCHS

-50 -50 ns 13,14,15

+ 14 hidden pages