DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
PLVA400A series
Low-voltage avalanche regulator diodes
Product specification |
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1996 Apr 26 |
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Supersedes data of April 1992 |
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Philips Semiconductors |
Product specification |
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Low-voltage avalanche regulator diodes |
PLVA400A series |
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FEATURES
·Very low dynamic impedance at low currents: approximately 1¤20 of conventional series
·Hard breakdown knee
·Low noise: approximately 1¤10 of conventional series
·Total power dissipation: max. 400 mW
·Small tolerances of VZ
·Working voltage range: nom. 5.0 to 6.8 V
·Non-repetitive peak reverse power dissipation: max. 30 W.
APPLICATIONS
·Low current, low power, low noise applications
·CMOS RAM back-up circuits
·Voltage stabilizers
·Voltage limiters
·Smoke detector relays.
LIMITING VALUES
DESCRIPTION
High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages.
The series consists of PLVA450A to PLVA468A.
handbook, halfpage k |
a |
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MAM239 |
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
MARKING
TYPE NUMBER |
MARKING CODE |
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PLVA450A |
450APH |
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PLVA453A |
453APH |
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PLVA456A |
456APH |
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PLVA459A |
459APH |
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PLVA462A |
462APH |
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PLVA465A |
465APH |
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PLVA468A |
468APH |
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In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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IF |
continuous forward current |
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- |
250 |
mA |
IZRM |
repetitive peak working current |
tp = 100 ms; d = 10% |
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250 |
mA |
Ptot |
total power dissipation |
Ttp £ 55 °C; note 1 |
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400 |
mW |
PZSM |
non-repetitive peak reverse power |
tp = 100 ms; Tj = 150 °C |
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30 |
W |
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dissipation |
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Tstg |
storage temperature |
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-65 |
+200 |
°C |
Tj |
junction temperature |
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- |
175 |
°C |
Note
1. Lead length 8 mm.
1996 Apr 26 |
2 |