DISCRETE SEMICONDUCTORS
DATA SHEET
M3D176
BZX79 series
Voltage regulator diodes
Product specification |
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1999 May 25 |
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Supersedes data of 1996 Apr 26 |
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Philips Semiconductors |
Product specification |
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Voltage regulator diodes |
BZX79 series |
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FEATURES
∙Total power dissipation: max. 500 mW
∙Three tolerance series: ±1%, ±2%, and approx. ±5%
∙Working voltage range: nom. 2.4 to 75 V (E24 range)
∙Non-repetitive peak reverse power dissipation: max. 40 W.
APPLICATIONS
∙Low voltage stabilizers or voltage references.
LIMITING VALUES
DESCRIPTION
Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The diodes are available in the normalized E24
±1% (BZX79-A), ±2% (BZX79-B), and approx. ±5% (BZX79-C) tolerance range. The series consists of 37 types with nominal working voltages from 2.4 to 75 V.
k |
a |
MAM239
The diodes are type branded.
Fig.1 Simplified outline (SOD27; DO-35) and symbol.
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
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IF |
continuous forward current |
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250 |
mA |
IZSM |
non-repetitive peak reverse current |
tp = 100 μs; square wave; |
see Tables |
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Tj = 25 °C prior to surge |
1, 2, 3 and 4 |
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Ptot |
total power dissipation |
Tamb = 50 °C; note 1 |
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400 |
mW |
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Tamb = 50 °C; note 2 |
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500 |
mW |
PZSM |
non-repetitive peak reverse power |
tp = 100 μs; square wave; |
− |
40 |
W |
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dissipation |
Tj = 25 °C prior to surge; see Fig.3 |
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Tstg |
storage temperature |
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−65 |
+200 |
°C |
Tj |
junction temperature |
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−65 |
+200 |
°C |
Notes
1.Device mounted on a printed circuit-board without metallization pad; lead length max.
2.Tie-point temperature ≤ 50 °C; max. lead length 8 mm.
1999 May 25 |
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Philips Semiconductors |
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Product specification |
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Voltage regulator diodes |
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BZX79 series |
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ELECTRICAL CHARACTERISTICS |
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Total BZX79-A, B and C series |
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Tj = 25 °C unless otherwise specified. |
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SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
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UNIT |
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VF |
forward voltage |
IF = 10 mA; see Fig.4 |
0.9 |
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V |
IR |
reverse current |
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BZX79-A/B/C2V4 |
VR = 1 V |
50 |
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μA |
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BZX79-A/B/C2V7 |
VR = 1 V |
20 |
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μA |
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BZX79-A/B/C3V0 |
VR = 1 V |
10 |
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μA |
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BZX79-A/B/C3V3 |
VR = 1 V |
5 |
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μA |
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BZX79-A/B/C3V6 |
VR = 1 V |
5 |
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μA |
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BZX79-A/B/C3V9 |
VR = 1 V |
3 |
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μA |
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BZX79-A/B/C4V3 |
VR = 1 V |
3 |
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μA |
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BZX79-A/B/C4V7 |
VR = 2 V |
3 |
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μA |
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BZX79-A/B/C5V1 |
VR = 2 V |
2 |
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μA |
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BZX79-A/B/C5V6 |
VR = 2 V |
1 |
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μA |
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BZX79-A/B/C6V2 |
VR = 4 V |
3 |
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μA |
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BZX79-A/B/C6V8 |
VR = 4 V |
2 |
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μA |
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BZX79-A/B/C7V5 |
VR = 5 V |
1 |
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μA |
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BZX79-A/B/C8V2 |
VR = 5 V |
700 |
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nA |
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BZX79-A/B/C9V1 |
VR = 6 V |
500 |
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nA |
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BZX79-A/B/C10 |
VR = 7 V |
200 |
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nA |
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BZX79-A/B/C11 |
VR = 8 V |
100 |
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nA |
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BZX79-A/B/C12 |
VR = 8 V |
100 |
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nA |
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BZX79-A/B/C13 |
VR = 8 V |
100 |
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nA |
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BZX79-A/B/C15 to 75 |
VR = 0.7VZnom |
50 |
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nA |
1999 May 25 |
3 |
25 May 1999
4
Table 1 Per type BZX79-A/B2V4 to A/B24
Tj = 25 °C unless otherwise specified.
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WORKING VOLTAGE |
DIFFERENTIAL RESISTANCE |
TEMP. COEFF. |
DIODE CAP. |
NON-REPETITIVE PEAK |
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BZX79- |
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VZ (V) |
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rdif (Ω) |
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SZ (mV/K) |
Cd (pF) |
REVERSE CURRENT |
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at IZtest = 5 mA |
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at IZtest = 5 mA |
at f = 1 MHz; |
IZSM (A) |
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A or B |
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(see Figs 5 and 6) |
VR = 0 V |
at tp = 100 μs; Tamb = 25 °C |
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XXX |
Tol. ±1% (A) |
Tol. ±2% (B) |
at IZtest = 1 mA |
at IZtest = 5 mA |
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MIN. |
MAX. |
MIN. |
MAX. |
TYP. |
MAX. |
TYP. |
MAX. |
MIN. |
TYP. |
MAX. |
MAX. |
MAX. |
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2V4 |
2.37 |
2.43 |
2.35 |
2.45 |
275 |
600 |
70 |
100 |
−3.5 |
−1.6 |
0 |
450 |
6.0 |
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2V7 |
2.67 |
2.73 |
2.65 |
2.75 |
300 |
600 |
75 |
100 |
−3.5 |
−2.0 |
0 |
450 |
6.0 |
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3V0 |
2.97 |
3.03 |
2.94 |
3.06 |
325 |
600 |
80 |
95 |
−3.5 |
−2.1 |
0 |
450 |
6.0 |
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3V3 |
3.26 |
3.34 |
3.23 |
3.37 |
350 |
600 |
85 |
95 |
−3.5 |
−2.4 |
0 |
450 |
6.0 |
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3V6 |
3.56 |
3.64 |
3.53 |
3.67 |
375 |
600 |
85 |
90 |
−3.5 |
−2.4 |
0 |
450 |
6.0 |
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3V9 |
3.86 |
3.94 |
3.82 |
3.98 |
400 |
600 |
85 |
90 |
−3.5 |
−2.5 |
0 |
450 |
6.0 |
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4V3 |
4.25 |
4.35 |
4.21 |
4.39 |
410 |
600 |
80 |
90 |
−3.5 |
−2.5 |
0 |
450 |
6.0 |
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4V7 |
4.65 |
4.75 |
4.61 |
4.79 |
425 |
500 |
50 |
80 |
−3.5 |
−1.4 |
0.2 |
300 |
6.0 |
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5V1 |
5.04 |
5.16 |
5.00 |
5.20 |
400 |
480 |
40 |
60 |
−2.7 |
−0.8 |
1.2 |
300 |
6.0 |
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5V6 |
5.54 |
5.66 |
5.49 |
5.71 |
80 |
400 |
15 |
40 |
−2.0 |
1.2 |
2.5 |
300 |
6.0 |
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6V2 |
6.13 |
6.27 |
6.08 |
6.32 |
40 |
150 |
6 |
10 |
0.4 |
2.3 |
3.7 |
200 |
6.0 |
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6V8 |
6.73 |
6.87 |
6.66 |
6.94 |
30 |
80 |
6 |
15 |
1.2 |
3.0 |
4.5 |
200 |
6.0 |
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7V5 |
7.42 |
7.58 |
7.35 |
7.65 |
30 |
80 |
6 |
15 |
2.5 |
4.0 |
5.3 |
150 |
4.0 |
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8V2 |
8.11 |
8.29 |
8.04 |
8.36 |
40 |
80 |
6 |
15 |
3.2 |
4.6 |
6.2 |
150 |
4.0 |
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9V1 |
9.00 |
9.20 |
8.92 |
9.28 |
40 |
100 |
6 |
15 |
3.8 |
5.5 |
7.0 |
150 |
3.0 |
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10 |
9.90 |
10.10 |
9.80 |
10.20 |
50 |
150 |
8 |
20 |
4.5 |
6.4 |
8.0 |
90 |
3.0 |
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11 |
10.89 |
11.11 |
10.80 |
11.20 |
50 |
150 |
10 |
20 |
5.4 |
7.4 |
9.0 |
85 |
2.5 |
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12 |
11.88 |
12.12 |
11.80 |
12.20 |
50 |
150 |
10 |
25 |
6.0 |
8.4 |
10.0 |
85 |
2.5 |
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13 |
12.87 |
13.13 |
12.70 |
13.30 |
50 |
170 |
10 |
30 |
7.0 |
9.4 |
11.0 |
80 |
2.5 |
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15 |
14.85 |
15.15 |
14.70 |
15.30 |
50 |
200 |
10 |
30 |
9.2 |
11.4 |
13.0 |
75 |
2.0 |
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16 |
15.84 |
16.16 |
15.70 |
16.30 |
50 |
200 |
10 |
40 |
10.4 |
12.4 |
14.0 |
75 |
1.5 |
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18 |
17.82 |
18.18 |
17.60 |
18.40 |
50 |
225 |
10 |
45 |
12.4 |
14.4 |
16.0 |
70 |
1.5 |
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20 |
19.80 |
20.20 |
19.60 |
20.40 |
60 |
225 |
15 |
55 |
14.4 |
16.4 |
18.0 |
60 |
1.5 |
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22 |
21.78 |
22.22 |
21.60 |
22.40 |
60 |
250 |
20 |
55 |
16.4 |
18.4 |
20.0 |
60 |
1.25 |
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24 |
23.76 |
24.24 |
23.50 |
24.50 |
60 |
250 |
25 |
70 |
18.4 |
20.4 |
22.0 |
55 |
1.25 |
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diodes regulator Voltage
series BZX79
Semiconductors Philips
specification Product