Philips BZX84-C75, BZX84-C6V8, BZX84-C6V2, BZX84-C8V2, BZX84-C7V5 Datasheet
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
BZX84 series
Voltage regulator diodes
Product specification |
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1999 May 18 |
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Supersedes data of 1996 Apr 26 |
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Philips Semiconductors |
Product specification |
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Voltage regulator diodes |
BZX84 series |
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FEATURES
∙Total power dissipation: max. 250 mW
∙Three tolerance series: ±1%, ±2% and approx. ±5%
∙Working voltage range: nom. 2.4 to 75 V (E24 range)
∙Non-repetitive peak reverse power dissipation: max. 40 W.
APPLICATIONS
∙ General regulation functions.
DESCRIPTION
Low-power voltage regulator diodes in small SOT23 plastic SMD packages.
The diodes are available in the normalized E24 ±1% (BZX84-A), ±2% (BZX84-B) and approx. ±5% (BZX84-C) tolerance range.
The series consists of 37 types with nominal working voltages from
2.4 to 75 V.
PINNING
PIN |
DESCRIPTION |
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1 |
anode |
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2 |
not connected |
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3 |
cathode |
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handbook, halfpage |
1 |
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2
n.c. 1
3
3
Top view |
MAM243 |
Fig.1 Simplified outline (SOT23) and symbol.
1999 May 18 |
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Philips Semiconductors |
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Product specification |
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Voltage regulator diodes |
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BZX84 series |
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MARKING |
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TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
TYPE |
MARKING |
NUMBER |
CODE(1) |
NUMBER |
CODE(1) |
NUMBER |
CODE(1) |
NUMBER |
CODE |
Marking codes for BZX84-C2V4 to BZX84-C75 |
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BZX84-C2V4 |
Z11 |
BZX84-C6V2 |
Z4 |
BZX84-C16 |
Y5 |
BZX84-C43 |
Y15 |
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BZX84-C2V7 |
Z12 |
BZX84-C6V8 |
Z5 |
BZX84-C18 |
Y6 |
BZX84-C47 |
Y16 |
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BZX84-C3V0 |
Z13 |
BZX84-C7V5 |
Z6 |
BZX84-C20 |
Y7 |
BZX84-C51 |
Y17 |
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BZX84-C3V3 |
Z14 |
BZX84-C8V2 |
Z7 |
BZX84-C22 |
Y8 |
BZX84-C56 |
Y18 |
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BZX84-C3V6 |
Z15 |
BZX84-C9V1 |
Z8 |
BZX84-C24 |
Y9 |
BZX84-C62 |
Y19 |
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BZX84-C3V9 |
Z16 |
BZX84-C10 |
Z9 |
BZX84-C27 |
Y10 |
BZX84-C68 |
Y20 |
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BZX84-C4V3 |
Z17 |
BZX84-C11 |
Y1 |
BZX84-C30 |
Y11 |
BZX84-C75 |
Y21 |
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BZX84-C4V7 |
Z1 |
BZX84-C12 |
Y2 |
BZX84-C33 |
Y12 |
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− |
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BZX84-C5V1 |
Z2 |
BZX84-C13 |
Y3 |
BZX84-C36 |
Y13 |
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− |
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BZX84-C5V6 |
Z3 |
BZX84-C15 |
Y4 |
BZX84-C39 |
Y14 |
− |
− |
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Marking codes for BZX84-B2V4 to BZX84-B75 |
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BZX84-B2V4 |
Z50 |
BZX84-B6V2 |
Z60 |
BZX84--B16 |
Z70 |
BZX84-B43 |
Z80 |
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BZX84-B2V7 |
Z51 |
BZX84-B6V8 |
Z61 |
BZX84-B18 |
Z71 |
BZX84-B47 |
Z81 |
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BZX84-B3V0 |
Z52 |
BZX84-B7V5 |
Z62 |
BZX84-B20 |
Z72 |
BZX84-B51 |
Z82 |
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BZX84-B3V3 |
Z53 |
BZX84-B8V2 |
Z63 |
BZX84-B22 |
Z73 |
BZX84-B56 |
Z83 |
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BZX84-B3V6 |
Z54 |
BZX84-B9V1 |
Z64 |
BZX84-B24 |
Z74 |
BZX84-B62 |
Z84 |
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BZX84-B3V9 |
Z55 |
BZX84-B10 |
Z65 |
BZX84-B27 |
Z75 |
BZX84-B68 |
Z85 |
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BZX84-B4V3 |
Z56 |
BZX84-B11 |
Z66 |
BZX84-B30 |
Z76 |
BZX84-B75 |
Z86 |
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BZX84-B4V7 |
Z57 |
BZX84-B12 |
Z67 |
BZX84-B33 |
Z77 |
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− |
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BZX84-B5V1 |
Z58 |
BZX84-B13 |
Z68 |
BZX84-B36 |
Z78 |
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− |
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BZX84-B5V6 |
Z59 |
BZX84-B15 |
Z69 |
BZX84-B39 |
Z79 |
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− |
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Marking codes for BZX84-A2V4 to BZX84-A75 |
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BZX84-A2V4 |
Y50 |
BZX84-A6V2 |
Y60 |
BZX84-A16 |
Y70 |
BZX84-A43 |
Y80 |
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BZX84-A2V7 |
Y51 |
BZX84-A6V8 |
Y61 |
BZX84-A18 |
Y71 |
BZX84-A47 |
Y81 |
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BZX84-A3V0 |
Y52 |
BZX84-A7V5 |
Y62 |
BZX84-A20 |
Y72 |
BZX84-A51 |
Y82 |
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BZX84-A3V3 |
Y53 |
BZX84-A8V2 |
Y63 |
BZX84-A22 |
Y73 |
BZX84-A56 |
Y83 |
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BZX84-A3V6 |
Y54 |
BZX84-A9V1 |
Y64 |
BZX84-A24 |
Y74 |
BZX84-A62 |
Y84 |
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BZX84-A3V9 |
Y55 |
BZX84-A10 |
Y65 |
BZX84-A27 |
Y75 |
BZX84-A68 |
Y85 |
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BZX84-A4V3 |
Y56 |
BZX84-A11 |
Y66 |
BZX84-A30 |
Y76 |
BZX84-A75 |
Y86 |
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BZX84-A4V7 |
Y57 |
BZX84-A12 |
Y67 |
BZX84-A33 |
Y77 |
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− |
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BZX84-A5V1 |
Y58 |
BZX84-A13 |
Y68 |
BZX84-A36 |
Y78 |
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− |
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BZX84-A5V6 |
Y59 |
BZX84-A15 |
Y69 |
BZX84-A39 |
Y79 |
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− |
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Note
1.= p : Made in Hong Kong.= t : Made in Malaysia.
1999 May 18 |
3 |
Philips Semiconductors |
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Product specification |
|||
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Voltage regulator diodes |
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BZX84 series |
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LIMITING VALUES |
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In accordance with the Absolute Maximum Rating System (IEC 134). |
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
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MAX. |
UNIT |
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IF |
continuous forward current |
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200 |
mA |
IZSM |
non-repetitive peak reverse current |
tp = 100 μs; square wave; |
see Tables |
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Tj = 25 °C prior to surge |
1 and 2 |
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Ptot |
total power dissipation |
Tamb = 25 °C; note 1 |
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250 |
mW |
PZSM |
non-repetitive peak reverse power |
tp = 100 μs; square wave; |
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40 |
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dissipation |
Tj = 25 °C prior to surge; see Fig.2 |
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Tstg |
storage temperature |
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−65 |
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+150 |
°C |
Tj |
junction temperature |
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−65 |
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+150 |
°C |
Note
1. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total BZX84-A and B and C series
Tj = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MAX. |
UNIT |
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VF |
forward voltage |
IF = 10 mA; see Fig.3 |
0.9 |
V |
IR |
reverse current |
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BZX84-A/B/C2V4 |
VR = 1 V |
50 |
μA |
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BZX84-A/B/C2V7 |
VR = 1 V |
20 |
μA |
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BZX84-A/B/C3V0 |
VR = 1 V |
10 |
μA |
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BZX84-A/B/C3V3 |
VR = 1 V |
5 |
μA |
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BZX84-A/B/C3V6 |
VR = 1 V |
5 |
μA |
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BZX84-A/B/C3V9 |
VR = 1 V |
3 |
μA |
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BZX84-A/B/C4V3 |
VR = 1 V |
3 |
μA |
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BZX84-A/B/C4V7 |
VR = 2 V |
3 |
μA |
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BZX84-A/B/C5V1 |
VR = 2 V |
2 |
μA |
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BZX84-A/B/C5V6 |
VR = 2 V |
1 |
μA |
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BZX84-A/B/C6V2 |
VR = 4 V |
3 |
μA |
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BZX84-A/B/C6V8 |
VR = 4 V |
2 |
μA |
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BZX84-A/B/C7V5 |
VR = 5 V |
1 |
μA |
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BZX84-A/B/C8V2 |
VR = 5 V |
700 |
nA |
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BZX84-A/B/C9V1 |
VR = 6 V |
500 |
nA |
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BZX84-A/B/C10 |
VR = 7 V |
200 |
nA |
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BZX84-A/B/C11 |
VR = 8 V |
100 |
nA |
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BZX84-A/B/C12 |
VR = 8 V |
100 |
nA |
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BZX84-A/B/C13 |
VR = 8 V |
100 |
nA |
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BZX84-A/B/C15 to 75 |
VR = 0.7VZnom |
50 |
nA |
1999 May 18 |
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