ON Semiconductor MJD44H11, MJD45H11 Service Manual

MJD44H11 (NPN)

MJD45H11 (PNP)

Preferred Device

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers.

Features

• Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

• Straight Lead Version in Plastic Sleeves (“-1” Suffix)

• Electrically Similar to Popular D44H/D45H Series

• Low Collector Emitter Saturation Voltage - VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

• Fast Switching Speeds

• Complementary Pairs Simplifies Designs

• Epoxy Meets UL 94 V-0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V

• Pb-Free Packages are Available

MAXIMUM RATINGS

Rating	Symbol	Max	Unit
Collector-Emitter Voltage	VCEO	80	Vdc
Emitter-Base Voltage	VEB	5	Vdc
Collector Current - Continuous	IC	8	Adc
- Peak		16
Total Power Dissipation	PD		W
@ TC = 25°C		20	W/°C
Derate above 25°C		0.16
Total Power Dissipation (Note 1)	PD	1.75	W
@ TA = 25°C			W/°C
°		0.014
Derate above 25 C
Operating and Storage Junction	TJ, Tstg	-55 to +150	°C
Temperature Range
THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Thermal Resistance, Junction-to-Case	RqJC	6.25	°C/W
Thermal Resistance, Junction-to-Ambient	RqJA	71.4	°C/W
(Note 1)
Lead Temperature for Soldering	TL	260	°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1.These ratings are applicable when surface mounted on the minimum pad sizes recommended.

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SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS, 20 WATTS

		MARKING
		DIAGRAMS
	4	YWW
		J4
1 2		xH11G
3		DPAK
		CASE 369C
		STYLE 1
	4
		YWW
		J4
1		xH11G
2
3		DPAK-3
		CASE 369D
		STYLE 1

Y= Year

WW = Work Week

J4xH11 = Device Code

x = 4 or 5

G= Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.

Preferred devices are recommended choices for future use and best overall value.

♥ Semiconductor Components Industries, LLC, 2008	1	Publication Order Number:
January, 2008 - Rev. 8		MJD44H11/D

MJD44H11 (NPN) MJD45H11 (PNP)

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic		Symbol	Min	Typ	Max	Unit
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage		VCEO(sus)	80			Vdc
(IC = 30 mA, IB = 0)
Collector Cutoff Current		ICES			1.0	mA
(VCE = Rated VCEO, VBE = 0)
Emitter Cutoff Current		IEBO			1.0	mA
(VEB = 5 Vdc)
ON CHARACTERISTICS
Collector-Emitter Saturation Voltage		VCE(sat)			1	Vdc
(IC = 8 Adc, IB = 0.4 Adc)
Base-Emitter Saturation Voltage		VBE(sat)			1.5	Vdc
(IC = 8 Adc, IB = 0.8 Adc)
DC Current Gain		hFE	60			-
(VCE = 1 Vdc, IC = 2 Adc)
DC Current Gain			40
(VCE = 1 Vdc, IC = 4 Adc)
DYNAMIC CHARACTERISTICS
Collector Capacitance		Ccb				pF
(VCB = 10 Vdc, ftest = 1 MHz)	MJD44H11			45
	MJD45H11			130
Gain Bandwidth Product		fT				MHz
(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz)	MJD44H11			85
	MJD45H11			90
SWITCHING TIMES
Delay and Rise Times		td + tr				ns
(IC = 5 Adc, IB1 = 0.5 Adc)	MJD44H11			300
	MJD45H11			135
Storage Time		ts				ns
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)	MJD44H11			500
	MJD45H11			500
Fall Time		tf				ns
(IC = 5 Adc, IB1 = IB2 = 0.5 Adc	MJD44H11			140
	MJD45H11			100

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2

MJD44H11 (NPN) MJD45H11 (PNP)

		1
EFFECTIVE TRANSIENT THERMAL		0.7		D = 0.5
		0.5
	RESISTANCE (NORMALIZED)	0.3		0.2
		0.2
													RqJC(t) = r(t) RqJC					P(pk)
				0.1
		0.1		0.05									RqJC = 6.25°C/W MAX
													D CURVES APPLY FOR POWER
		0.07
				0.02									PULSE TRAIN SHOWN						t1
		0.05
													READ TIME AT t1						t
						0.01							TJ(pk) - TC = P(pk) qJC(t)						2
		0.03																DUTY CYCLE, D = t1/t2
		0.02	SINGLE PULSE
r(t),
		0.01		0.02	0.03	0.05	0.1	0.2	0.3	0.5	1	2	3	5	10	20	30	50	100	200	300	500
		0.01																					1 k

t, TIME (ms)

Figure 1. Thermal Response

	20
(AMP)	10					500 ms	100 ms
	5
								1 ms
CURRENT	3		dc		5 ms
	2
	1
, COLLECTOR	0.5	THERMAL LIMIT @ TC = 25°C
	0.3	WIRE BOND LIMIT
	0.1
C
I	0.05
	0.02	3	5	7	10	20	30	50	70	100
	1

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 2. Maximum Forward Bias

Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the limitations imposed by second breakdown.

PD, POWER DISSIPATION (WATTS)

TA TC 2.5 25

2 20

1.5 15

1 10

0.5 5

00

25

TC

TA

SURFACE

MOUNT

50

75

100

125

150

T, TEMPERATURE (°C)

Figure 3. Power Derating

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