NEC NNCD11A, NNCD12A, NNCD4.7A, NNCD4.3A, NNCD6.2A Datasheet

DATA SHEET

E.S.D NOISE CLIPPING DIODES

NNCD3.3A to NNCD12A

ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES (400 mW TYPE)

This product series is a diode developed for E.S.D (Electrostatic Discharge) noise protection. Based on the IEC1000-4-2 test on electromagnetic interference (EMI), the diode assures an endurance of no less than 30 kV.

Type NNCD2.0A to NNCD12A Series is into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW.

FEATURES

•Based on the electrostatic discharge immunity test (IEC1000-4- 2), the product assures the minimum endurance of 30 kV.

•Based on the reference supply of the set, the product achieves a series over a wide range (15 product name lined up).

•DHD (Double Heatsink Diode) construction.

APPLICATIONS

PACKAGE DIMENSIONS
	(in millimeters)
φ 0.4
	25 MIN.
Cathode	MAX.
indication
φ 2.0 MAX.	2.4
	25 MIN.

•Circuit E.S.D protection.

•Circuits for Waveform clipper, Surge absorber.

MAXIMUM RATINGS (TA = 25 °C)

Power Dissipation	P	400 mW
Surge Reverse Power	PRSM	100	W (tT = 10 μs 1 pulse) Fig. 7
Junction Temperature	Tj	175	°C
Storage Temperature	Tstg	–65 °C to +175 °C

Document No. D11769EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan	©	1996

NNCD3.3A to NNCD12A

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

	Breakdown VoltageNote 1			Dynamic			Reverse Leakage		Capacitance		E.S.D Voltage
				ImpedanceNote 2
		VBR (V)					IR (μA)		Ct (pF)			(kV)
Type Number				Zz (Ω)
	MIN.	MAX.	IT (mA)	MAX.		IT (mA)	MAX.	VR (V)	TYP.	TEST	MIN.		TEST
										CONDITION			CONDITION
NNCD3.3A	3.16	3.53	5	120		5	20	1.0	220		30
NNCD3.6A	3.47	3.83	5	120		5	10	1.0	210		30
NNCD3.9A	3.77	4.14	5	120		5	5	1.0	200		30
NNCD4.3A	4.05	4.53	5	120		5	5	1.0	180		30
NNCD4.7A	4.47	4.91	5	120		5	5	1.0	170		30
NNCD5.1A	4.85	5.35	5	100		5	5	1.5	160		30		C = 150 pF
NNCD5.6A	5.29	5.88	5	70		5	5	2.5	140	VR = 0 V	30		R = 330 Ω
										f = 1 MHz			(IEC1000
NNCD6.2A	5.81	6.40	5	40		5	5	3.0	120		30
													-4-2)
NNCD6.8A	6.32	6.97	5	30		5	2	3.5	110		30
NNCD7.5A	6.88	7.64	5	25		5	0.5	4.0	90		30
NNCD8.2A	7.56	8.41	5	20		5	0.5	5.0	90		30
NNCD9.1A	8.33	9.29	5	20		5	0.5	6.0	90		30
NNCD10A	9.19	10.3	5	20		5	0.2	7.0	80		30
NNCD11A	10.18	11.26	5	20		5	0.2	8.0	70		30
NNCD12A	11.13	12.30	5	25		5	0.2	9.0	70		30

Notes 1. Tested with pulse (40 ms)

2. Zz is measured at IT give a small A.C. signal.

2

NNCD3.3A to NNCD12A

TYPICAL CHARACTERISTICS (TA = 25 °C)

Fig. 1 POWER DISSIPATION vs.

AMBIENT TEMPERATURE

mW

600

500

= 10

mm

-

Dissipation

400

= 5 mm

P.C Board

= 3

mm

7 mm

= 10 mm

300

t = 0.035 mm

= 5 mm

Power

200

P -

100

P.C Board φ 3 mm

= 3 mm

t = 0.035

00 20 40 60 80 100 120 140 160 180 200

TA - Ambient Temperature - °C

Fig. 3 IT - VBR CHARACTERISTICS

		NNCD7.5A	NNCD8.2A
		NNCD6.8A
	100 m		NNCD9.1A
	NNCD3.3A
	10 m NNCD3.6A
	NNCD3.9A
	NNCD4.3A
A	1 m
-
CurrentState	10 μ
	NNCD4.7A
	100 μ
On
IT -	1 μ

100 n NNCD5.1A

NNCD5.6A

NNCD6.2A

10 n

1 n

0	1	2	3	4	5	6	7	8	9	10
		VBR - Breakdown Voltage - V

Fig. 2 THERMAL RESISTANCE vs.

SIZE OF P.C BOARD

		600	Junction to
	°C/W	500
			anbient
	-
	Resistance	400	S
			= 10 mm
		300	= 5 mm
	Thermal		= 3 mm
		200

-	100
Rth

00	20	40	60	80	100
	S - Size of P.C Board - mm2

Fig. 4 IT - VBR CHARACTERISTICS

100 m

NNCD11A

10 m

NNCD10A

NNCD12A

A

1 m

-

StateCurrent

10

μ

On

100

μ

IT -

1

μ

100 n

10 n

1 n

0	7	8	9	10	11	12	13	14	15
		VBR - Breakdown Voltage - V

3