NEC NEZ3642-4D, NEZ3642-8D, NEZ3642-4DD, NEZ3642-8DD, NEZ4450-15B Datasheet

PRELIMINARY DATA SHEET

GaAs MES FET

15 W C-BAND POWER GaAs FET NEZ SERIES

15 W C-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band.

To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure.

NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.

SELECTION CHART

PACKAGE DIMENSIONS (unit: mm)

		SOURCE										0.5 ±0.1													.2
C1.0 4PLACES																									5
							GATE																		.MIN
R1.2 4PLACES
																									4.17
																							5 4.2
0.8
1.±0																						6.			2.±0

5.2

DRAIN

MIN.

20.4 ±0.2

20.4 ±0.3

NEZ PART NUMBER

FREQUENCY BAND (GHz)

NEZ3642-15D, 15DD

3.6 to 4.2

NEZ4450-15D, 15DD

4.4 to 5.0

1.0

NEZ5964-15D, 15DD

5.9 to 6.45

05.0–

1.+0

.±042.

61.

NEZ6472-15D, 15DD

6.4 to 7.2

2

NEZ7785-15D

7.7 to 8.5

FEATURES

•Internally matched to 50 Ω

•High power output

•High linear gain

•High reliability

•Low distortion

16.0

16.0

								.MAX 0.5
					0
						.MAX 2.

Document No. P10982EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan	©	1996

15 W C-BAND Po GaAs FET NEZ SERIES

NEZ-15D/15DD

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

CHARACTERISTIC	SYMBOL	RATINGS	UNIT
Drain to Source Voltage	VDS	15	V
Gate to Source Voltage	VGS	–12	V
Gate to Drain Voltage	VGD	–18	V
Drain Current	ID	18	A
Gate Current	IG	100	mA
Total Power Dissipation	PT*	100	W
Channel Temperature	Tch	175	˚C
Storage Temperature	Tstg	–65 to +175	˚C

* TC = 25 ˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC	SYMBOL	Part No.	MIN.	TYP.	MAX.	UNIT	TEST CONDITIONS
Saturated Drain Current	IDSS	NEZ-15D	4.0	9.2	14.0	A	VDS = 2.5 V, VGS = 0 V
		NEZ-15DD
Pinch-off Voltage	VP	NEZ-15D	–3.5	–2.2	–0.5	V	VDS = 2.5 V, IDS = 60 mA
		NEZ-15DD
Trans-Conductance	gm	NEZ-15D	–	5200	–	mS	VDS = 2.5 V, IDS = 4 A
		NEZ-15DD
Gate to Drain Voltage	BVGDO	NEZ-15D	20	22	–	V	IGD = 60 mA
		NEZ-15DD
Thermal Resistance	Rth	NEZ-15D	–	1.3	1.5	˚C/W	Channel to Case
		NEZ15DD

2

15 W C-BAND Po GaAs FET NEZ SERIES

15W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, Zs = ZL = 50 Ω)

	p1dB				GL			IDS		GL		IM3		ηadd			TEST CONDITIONS
PART NUMBER	(dBm)			(dB)				(A)		(dB)		(dBc)		(%)	VDS	IDS		FREQUENCY		IM3 TEST
		*1						*2		*3,4		*4				*5		BAND		FREQ.
															(V)	(A)		(GHz)		(GHz)*6
	MIN.		TYP.	MIN.		TYP.	TYP.		MAX.	MAX.	TYP.		MAX.	TYP.
NEZ3642-15D	41.5		42.5	9.0		10.0	4.8		6.0	–	–		–	35	10	4.0		3.6 to 4.2		–
NEZ3642-15DD	41.5		42.5	9.0		10.0	4.8		6.0	1.0	–		–42	35	10	4.0		3.6 to 4.2		4.2
NEZ4450-15D	41.5		42.5	9.0		10.0	4.8		6.0	–	–		–	35	10	4.0		4.4 to 5.0		–
NEZ4450-15DD	41.5		42.5	9.0		10.0	4.8		6.0	1.0	–		–42	35	10	4.0		4.4 to 5.0		5.0
NEZ5964-15D	41.5		42.5	8.0		9.0	4.8		6.0	–	–		–	33	10	4.0		5.9 to 6.45		–
NEZ5964-15DD	41.5		42.5	8.0		9.0	4.8		6.0	1.0	–		–42	33	10	4.0		5.9 to 6.45		6.45
NEZ6472-15D	41.5		42.5	6.5		7.5	4.8		6.0	–	–		–	31	10	4.0		6.4 to 7.2		–
NEZ6472-15DD	41.5		42.5	6.5		7.5	4.8		6.0	1.0	–		–42	31	10	4.0		6.4 to 7.2		7.2
NEZ7785-15D	41.5		42.5	6.0		7.0	4.8		6.0	–	–		–	27	10	4.0		7.7 to 8.5		–

Notes *1	Output power at 1 dB gain compression point
*2	IDS values are specified at P1dB point.
*3	Gain flatness
*4	Applies to –15DD option only
*5	RF OFF
*6	IM3 test conditions: f = 10 MHz, 2 tones test, PO = 31.5 dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max. (Ω)		VDS max. (V)
50		10

Rg max is the maximum series resistance between the gate supply and the FET gate.

3

										15 W C-BAND Po GaAs FET NEZ SERIES
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
										NEZ3642-15D/15DD
		TOTAL POWER DISSIPATION vs.									Pout	OUTPUT POWER vs. INPUT POWER
		CASE TEMPERATURE									(dBm)
	110									ID	45
											Test Conditions:		Pout
	100									(A)	Freq = 3.9 (GHz),
							Infinite Heat sink			6	VDS = 10.0 (V),
W	90										IDS = 4.0 (A)
											Pout: Pin = 35.0 (dBm),
-
	80										40 GL: Pin = 24.0 (dBm),
Dissipation
				–15D/–15DD							Rg = 50 (Ω)
	70
	60									5				ID
Power-	50									4	35			EFF	50
	30
	40														EFF
															(%)
PT	20										30				40
															30
	10														20
															10
	0	25	50	75	100	125	150	175	200	3	20	25	30	35	0
	0
			TC - Case Temperature - ˚C									Pin - Input Power - dBm
NEZ4450-15D/15DD										NEZ5964-15D/15DD

ID

(A)

6

5

4

3

Pout		OUTPUT POWER vs. INPUT POWER																											Pout			OUTPUT POWER vs. INPUT POWER
(dBm)																													(dBm)
45																											45
	Test Conditions:																	Pout										ID			Test Conditions:																	Pout
	Freq = 4.7 (GHz),																										(A)
																															Freq = 6.2 (GHz),
	VDS = 10.0 (V),																												5		VDS = 10.0 (V),
	IDS = 4.0 (A)
																															ID = 4.0 (A)
	Pout: Pin = 37.0 (dBm),
																															Rg = 50 (Ω)
40	GL: Pin = 26.0 (dBm),																												40
	Rg = 50 (Ω)																			ID
																													4																						ID
35																								EFF					35																											EFF
																								(%)					3																											(%)
																										50																																50
30																		EFF								40			30																				EFF									40
																										30																																30
																										20																																20
																										10																																10
																										0			2																													0
20		25					30									35															25						30							35				40
					Pin		- Input Power - dBm																												Pin		- Input Power - dBm

4