NEC NEZ7177-3A(1), NEZ7177-3AM, NEZ7177-3AM(1), NEZ7177-3B, NEZ7177-3B(2) Datasheet

PRELIMINARY DATA SHEET

GaAs MES FET

4W/8W C-BAND POWER GaAs FET NEZ Series

4W/8W C-BAND POWER GaAs FET

N-CHANNEL GaAs MES FET

DESCRIPTION

PACKAGE DIMENSIONS (unit: mm)

The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications.

Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band.

To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure.

NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.

SELECTION CHART

C1.5 4PLACES

SOURCE

R1.6 2PLACES

05.0±45.6

NEZ PART NUMBER	FREQUENCY BAND (GHz)
NEZ3642-4D, 8D, 8DD	3.6 to 4.2
		0		2
		1.
NEZ4450-4D, 4DD/8D, 8DD	4.4 to 5.0			2.0±6.		6.1
		05.0–	1.+0
NEZ5964-4D, 4DD/8D, 8DD	5.9 to 6.45
NEZ6472-4D, 4DD/8D, 8DD	6.4 to 7.2
NEZ7177-4D, 4DD/8D, 8DD	7.1 to 7.7
NEZ7785-4D, 4DD/8D, 8DD	7.7 to 8.5

	0.5±0.1
	GATE	2.4	.2
			.5MIN

2.3	±9.12
	2.0
	.2
DRAIN	.5MIN
17.0±0.2
21.0±0.3
10.7

.2MAX.0	0MAX.5
	.

12.0

FEATURES

•Internally matched to 50 Ω

•High power output

•High linear gain

•High reliability

•Low distortion

Document No. P10981EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan	©	1996

4W/8W C-BAND POWER-GaAs FET NEZ Series

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

RATINGS

UNIT

NEZ-4D, 4DD

NEZ-8D, 8DD

Drain to Source Voltage

VDS

15

15

V

Gate to Source Voltage

VGS

– 12

–12

V

Gate to Drain Voltage

VGD

– 18

– 18

V

Drain Current

ID

4.5

9.0

A

Gate Current

IG

25

50

mA

Total Power Dissipation

PT*

25

50

W

Channel Temperature

Tch

175

175

˚C

Storage Temperature

Tstg

– 65 to + 175

– 65 to + 175

˚C

*TC = 25 ˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

SYMBOL

Part No.

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Saturated Drain Current

IDSS

NEZ-4D

1.0

2.3

3.5

A

VDS = 2.5 V, VGS = 0 V

NEZ-8D, 8DD

2.0

4.5

7.0

Pinch-off Voltage

VP

NEZ-4D, 4DD

– 3.5

– 2.0

– 0.5

V

VDS = 2.5 V, IDS = 15 mA

NEZ-8D, 8DD

– 3.5

– 2.0

– 0.5

VDS = 2.5 V, IDS = 30 mA

Trans-Conductance

gm

NEZ-4D, 4DD

—

1300

—

mS

VDS = 2.5 V, IDS = 1 A

NEZ-8D, 8DD

—

2600

—

VDS = 2.5 V, IDS = 2 A

Gate to Drain Voltage

BVGD0

NEZ-4D, 4DD

20

22

—

V

IGD = 15 mA

NEZ-8D, 8DD

20

22

—

IGD = 30 mA

Thermal Resistance

Rth

NEZ-4D, 4DD

—

5.0

6.0

˚C/W

Channel to Case

NEZ-8D, 8DD

—

2.5

3.0

2

4W/8W C-BAND Power-GaAs FET NEZ Series

4W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, ZS = ZL = 50 Ω)

			P1dB				GL		IDS				GL	IM3			ηadd		TEST CONDITIONS
PART NUMBER			(dBm)				(dB)		(A)				(dB)	(dBc)			(%)	VDS	IDS	FREQUENCY	IM3 TEST
					*1				*2				*3, 4		*4				(RF OFF)	BAND		FREQ.
																						(GHz) *5
			MIN.			TYP.	MIN.	TYP.	TYP.	MAX.		MAX.		TYP.		MAX.	TYP.	(V)	(A)	(GHz)
NEZ3642-4D			35.5			36.5	10.0	11.0	1.2		1.5		1.0	– 45		– 42	43	10	0.8	3.6 to 4.2		4.2
NEZ4450-4D, 4DD			35.5			36.5	9.5	10.5	1.2		1.5		1.0	– 45		– 42	40	10	0.8	4.4 to 5.0		5.0
NEZ5964-4D, 4DD			35.5			36.5	9.0	10.0	1.2		1.5		1.0	– 45		– 42	37	10	0.8	5.9 to 6.45		6.45
NEZ6472-4D, 4DD			35.5			36.5	8.0	9.0	1.2		1.5		1.0	– 45		– 42	35	10	0.8	6.4 to 7.2		7.2
NEZ7177-4D, 4DD			35.5			36.5	7.5	8.5	1.2		1.5		1.0	– 45		– 42	33	10	0.8	7.1 to 7.7		7.7
NEZ7785-4D, 4DD			35.5			36.5	7.0	8.0	1.2		1.5		1.0	– 45		– 42	33	10	0.8	7.7 to 8.5		8.5
Notes *1	Output power at 1dB gain compression point
*2	IDS values are specified at P1dB point.
*3	Gain flatness
*4	Applies to – 4DD option only
*5	IM3 test conditions:						f = 10 MHz, 2 tones test, PO = 26dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.		VDS max.
(Ω)		(V)
200		10

Rg max is the maximum series resistance between the gate supply and the FET gate.

3

4W/8W C-BAND POWER-GaAs FET NEZ Series

8W PERFORMANCE SPECIFICATIONS (TA = 25 ˚C, ZS = ZL = 50 Ω)

			P1dB				GL		IDS				GL	IM3			ηadd		TEST CONDITIONS
PART NUMBER			(dBm)				(dB)		(A)				(dB)	(dBc)			(%)	VDS	IDS	FREQUENCY	IM3 TEST
					*1				*2				*3, 4		*4				(RF OFF)	BAND		FREQ.
																						(GHz) *5
			MIN.			TYP.	MIN.	TYP.	TYP.	MAX.		MAX.		TYP.		MAX.	TYP.	(V)	(A)	(GHz)
NEZ3642-8D, 8DD			38.5			39.5	10.0	11.0	2.4		3.0		1.0	– 45		– 42	40	10	1.6	3.6 to 4.2		4.2
NEZ4450-8D, 8DD			38.5			39.5	9.5	10.5	2.4		3.0		1.0	– 45		– 42	37	10	1.6	4.4 to 5.0		5.0
NEZ5964-8D, 8DD			38.5			39.5	8.5	9.5	2.4		3.0		1.0	– 45		– 42	35	10	1.6	5.9 to 6.45		6.45
NEZ6472-8D, 8DD			38.5			39.5	7.5	8.5	2.4		3.0		1.0	– 45		– 42	32	10	1.6	6.4 to 7.2		7.2
NEZ7177-8D, 8DD			38.5			39.5	7.0	8.0	2.4		3.0		1.0	– 45		– 42	30	10	1.6	7.1 to 7.7		7.7
NEZ7785-8D, 8DD			38.5			39.5	6.5	7.5	2.4		3.0		1.0	– 45		– 42	30	10	1.6	7.7 to 8.5		8.5
Notes *1	Output power at 1dB gain compression point
*2	IDS values are specified at P1dB point.
*3	Gain flatness
*4	Applies to – 8DD option only
*5	IM3 test conditions:						f = 10 MHz, 2 tones test, PO = 29dBm (single carrier level)
MAXIMUM OPERATING LIMITS
Rg max.		VDS max.
(Ω)		(V)
100		10

Rg max is the maximum series resistance between the gate supply and the FET gate.

4

4W/8W C-BAND Power-GaAs FET NEZ Series

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

	NEZ3642-4D
TOTAL POWER DISSIPATION vs.	Pout
CASE TEMPERATURE	(dBm) OUTPUT POWER vs. INPUT POWER

	110									ID		Test Conditions:		Pout
	100
										(A)		Freq = 3.9 (GHz),
							Infinite Heat sink
- W	90									2		VDS = 10.0 (V), IDS = 0.8 (A),
											35	Pout: Pin = 27.0 (dBm),
	80											GL: Pin = 20.0 (dBm),
Dissipation											30	Rg = 200 (Ω)
	70
	60									1				ID
Power-	50		–8D/–8DD
		–4D/–4DD								0				EFF	50
	30
	40														EFF
															(%)
PT	20										25				40
															30
	10														20
															10
	0	25	50	75	100	125	150	175	200			15	20	25	0
	0
			TC - Case Temperature - ˚C									Pin - Input Power - dBm

NEZ3642-8D/8DD

	Pout		OUTPUT POWER vs. INPUT POWER
	(dBm)
ID
	40		Test Conditions:
(A)			Freq = 3.9 (GHz),		Pout
			VDS = 10.0 (V), IDS = 1.6 (A),

3Pout: Pin = 31.0 (dBm),

GL: Pin = 20.0 (dBm), Rg = 100 (Ω)

35
2										ID				EFF
30
1														(%)
																50
																40
								EFF								30
25																20
																10
0																0
20						25	30

Pin - Input Power - dBm

NEZ4450-4D/4DD

		Pout			OUTPUT POWER vs. INPUT POWER
		(dBm)
	ID
				Test Conditions:
(A)				Freq = 4.7 (GHz), VDS = 10.0 (V),
																				Pout
		3		ID = 0.80 A, Rg = 200 Ω
		35
		2
		30																										EFF
																							ID
		1																										(%)
																														50
		25																												40
																					EFF
																														30
																														20
																														10
		0																												0
				15						20				25						30

Pin - Input Power - dBm

5

4W/8W C-BAND POWER-GaAs FET NEZ Series

NEZ4450-8D/8DD

Pout

(dBm) OUTPUT POWER vs. INPUT POWER

ID

(A)

3 40

2 35

1 30

0 25

Test Conditions:		Pout
Freq = 4.7 (GHz), VDS = 10.0 (V),
ID = 1.6 (A), Rg = 100 (Ω)

ID

EFF

(%) EFF 50

40

30

20

10

0

20 25 30

Pin - Input Power - dBm

NEZ5964-4D, 4DD

Pout		OUTPUT POWER vs. INPUT POWER
(dBm)
ID		Test Conditions:

(A)VDS = 10.0 (V), ID = 0.8 (A) (RF OFF),

3	Rg = 200 (Ω), f = 6.175 (GHz)												Pout
35
2
30																		EFF
1															ID			(%)
																				50
25																				40
													EFF
																				30
																				20
																				10
0																				0
15					20		25					30
					Pin		- Input Power - dBm

Pout - Output Power - dBm

OUTPUT POWER vs. FREQUENCY

40

Test Conditions: VDS = 10 (V),

ID = 0.8 (A) (RF OFF), Rg = 200 (Ω)

Pin = 28 dBm

35

30	Pin = 20 dBm
	Pin = 18 dBm

25

5.0 5.2 5.4 5.6 5.8 6.0 6.2 6.4 6.6 6.8 7.0

f - Frequency - GHz

6