PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R5 SERIES
0.5 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip form. The NE960R500 has a via hole source grounding and PHS (Plated Heat Sink) for superior RF performance. The NE960R575 and the NE962R575 are available in a hermetically sealed ceramic package. The NE962R575 is suitable for oscillator application. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
FEATURES
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High Output Power |
: Po (1 dB) = +27.5 dBm TYP. |
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High Linear Gain |
: 9.0 dB TYP. |
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High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz |
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ORDERING INFORMATION |
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Part Number |
Package |
Supplying Form |
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NE960R500 |
00 (CHIP) |
ESD protective envelope |
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NE961R500 |
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NE960R575 |
75 |
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NE962R575 |
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Remark To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order: NE960R500, NE960R575, NE961R500, NE962R575)
Caution Please handle this device at static-free workstation, because this is an electrostatic sensitive
device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. P14387EJ1V0DS00 (1st edition)
Date Published July 1999 N CP(K) |
© |
1999 |
Printed in Japan |
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NE960R5 SERIES |
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ABSOLUTE MAXIMUM RATINGS (TA = +25°C) |
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Operation in excess of any one of these parameters may result in permanent damage. |
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Parameter |
Symbol |
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Ratings |
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Unit |
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Drain to Source Voltage |
VDS |
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15 |
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V |
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Gate to Source Voltage |
VGSO |
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–7 (−9Note 1) |
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V |
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Drain Current |
ID |
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0.7 |
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A |
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Gate Forward Current |
IGF |
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+5.0 |
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mA |
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Gate Reverse Current |
IGR |
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–5.0 |
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mA |
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Total Power Dissipation |
PT |
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5.0 (4.2Note 2) |
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W |
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Channel Temperature |
Tch |
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175 |
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°C |
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Storage Temperature |
Tstg |
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–65 to +175 |
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°C |
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Notes 1. |
NE962R575 |
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2. |
NE961R500 |
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RECOMMENDED OPERATING CONDITIONS
Parameter |
Symbol |
Test Condition |
MIN. |
TYP. |
MAX. |
Unit |
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Drain to Source Voltage |
VDS |
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− |
9.0 |
9.0 |
V |
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Gain Compression |
Gcomp |
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− |
− |
3.0 |
dB |
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Channel Temperature |
Tch |
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− |
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+130 |
°C |
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ELECTRICAL CHARACTERISTICS
(TA = +25°C, unless otherwise specified, using NEC standard test fixture.)
Parameter |
Symbol |
Test Conditions |
MIN. |
TYP. |
MAX. |
Unit |
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Saturated Drain Current |
IDSS |
VDS = 1.5 V, VGS = 0 V |
0.18 |
0.4 |
0.7 |
A |
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Pinch-off Voltage |
Vp |
VDS = 2.5 V, ID = 2 mA |
–2.5 |
–1.8 |
–0.5 |
V |
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Gate to Drain Break Down VoltageNote 1 |
BVgd |
Igd = 2 mA |
15 |
− |
− |
V |
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Gate to Source Break Down |
BVgs |
Igs = 2 mA |
9.0 |
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− |
V |
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VoltageNote 2 |
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Thermal Resistance |
Rth |
Channel to Case |
− |
− |
30 (35Note 3) |
°C/W |
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Output Power at Pin = +19 dBm |
Pout |
f = 14.5 GHz, VDS = 9.0 V |
25.5 |
26.5 |
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dBm |
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Rg = 1 kΩ |
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Output Power at 1 dB Gain |
Po (1 dB) |
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27.5 |
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dBm |
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IDset = 180 mA (RF OFF) |
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Compression PointNote 1 |
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Note 1 |
η add |
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30 |
− |
% |
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Power Added Efficiency at Po (1dB) |
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Linear GainNote 1 |
GL |
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8.0 |
9.0 |
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dB |
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Notes 1. Except NE962R575
2.NE962R575 only
3.NE961R500
Remark DC and RF performance is 100 % testing.
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Preliminary Data Sheet P14387EJ1V0DS00 |
NE960R5 SERIES
TYPICAL CHARACTERISTICS (TA = +25°C)
OUTPUT POWER AND POWER ADDED EFFICIENCY vs. INPUT POWER
30 |
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60 |
25 |
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45 |
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(%) |
20 |
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30 |
Output Power(dBm)Pout |
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Power AddedEfficiencyaddη |
15 |
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15 |
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f = 14.5 GHz (1 tone), |
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VDS = 9 V, IDset = 180 mA |
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Rg = 1 kΩ |
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10 |
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0 |
5 |
10 |
15 |
20 |
25 |
Drain Current ID (mA)
Gate Current Ig (mA)
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Input Power Pin (dBm) |
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DRAIN CURRENT AND GAIN vs. INPUT POWER |
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300 |
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12 |
250 |
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10 |
200 |
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8 |
150 |
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6 |
100 |
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4 |
5 |
10 |
15 |
20 |
25 |
Input Power Pin (dBm)
GATE CURRENT vs. INPUT POWER
1.5
1.0
0.5
0.0
0.5
5 |
10 |
15 |
20 |
25 |
Input Power Pin (dBm)
Gain (dB)
Preliminary Data Sheet P14387EJ1V0DS00 |
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NE960R5 SERIES
TYPICAL S-PARAMETER [NE960R575]
TEST CONDITIONS: VDS = 9 V, IDset = 180 mA
FREQUENCY |
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S11 |
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S21 |
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S12 |
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S22 |
GHz |
MAG. |
ANG. (deg.) |
MAG. |
ANG. (deg.) |
MAG. |
ANG. (deg.) |
MAG. |
ANG. (deg.) |
2.0 |
0.87 |
–140 |
4.36 |
85 |
0.042 |
23 |
0.23 |
–131 |
3.0 |
0.84 |
–154 |
2.98 |
68 |
0.040 |
19 |
0.25 |
–143 |
4.0 |
0.84 |
–160 |
2.36 |
54 |
0.040 |
22 |
0.30 |
–149 |
5.0 |
0.82 |
–163 |
2.08 |
42 |
0.043 |
32 |
0.32 |
–154 |
6.0 |
0.81 |
–167 |
1.99 |
33 |
0.047 |
34 |
0.34 |
–160 |
7.0 |
0.79 |
–175 |
1.96 |
18 |
0.055 |
35 |
0.36 |
–168 |
8.0 |
0.73 |
171 |
2.02 |
1 |
0.066 |
30 |
0.36 |
178 |
9.0 |
0.69 |
147 |
2.20 |
–20 |
0.076 |
18 |
0.37 |
159 |
10.0 |
0.62 |
109 |
2.30 |
–51 |
0.083 |
–4 |
0.38 |
136 |
11.0 |
0.63 |
47 |
2.22 |
–88 |
0.063 |
–41 |
0.45 |
95 |
12.0 |
0.76 |
0 |
1.62 |
–124 |
0.032 |
–82 |
0.57 |
65 |
13.0 |
0.79 |
–21 |
1.30 |
–144 |
0.017 |
–141 |
0.61 |
49 |
14.0 |
0.87 |
–45 |
0.90 |
–172 |
0.022 |
128 |
0.66 |
27 |
15.0 |
0.87 |
–53 |
0.60 |
166 |
0.034 |
101 |
0.73 |
11 |
16.0 |
0.83 |
–60 |
0.43 |
150 |
0.037 |
82 |
0.75 |
–2 |
START 2 GHz, STOP 16 GHz, STEP 1 GHz
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S11 |
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S12 |
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1.0 |
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+90° |
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0.5 |
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2.0 |
+135° |
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+45° |
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16 GHz |
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0 |
0.5 |
1.0 |
2.0 |
∞ |
±180° |
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2 GHz |
0° |
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2 GHz |
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16 GHz |
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–135° |
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–45° |
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–0.5 |
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–2.0 |
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–1.0 |
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Rmax. = 1 |
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–90° |
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Rmax. = 0.1 |
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S21 |
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S22 |
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+90° |
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1.0 |
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+135° |
2 GHz |
+45° |
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0.5 |
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2.0 |
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±180° |
16 GHz |
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0° |
0 |
0.5 |
1.0 |
2.0 |
16 GHz |
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∞ |
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2 GHz |
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–135° |
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–45° |
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–0.5 |
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–2.0 |
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–90° |
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Rmax. = 5 |
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–1.0 |
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Rmax. = 1 |
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4 |
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Preliminary Data Sheet P14387EJ1V0DS00 |
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