SANYO LC35256D-10, LC35256DT-10, LC35256DM-70, LC35256DM-10, LC35256DT-70 Datasheet

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SANYO LC35256D-10, LC35256DT-10, LC35256DM-70, LC35256DM-10, LC35256DT-70 Datasheet

Ordering number : EN5823

CMOS IC

LC35256D-10, LC35256DM, DT-70/10

Dual Control Pins: OE and CE

256K (32768-word × 8-bit) SRAM

Overview

The LC35256D, LC35256DM, and LC35256DT are 32768-word × 8-bit asynchronous silicon gate CMOS static RAMs. These devices use a 6-transistor full CMOS memory cell, and feature low-voltage operation, low current drain, and an ultralow standby current. They provide two control signal inputs: an OE input for highspeed access and a chip select (CE) input for device selection and low power operating mode. This makes these devices optimal for systems that require low power or battery backup, and they allow memory to be expanded easily. Their ultralow standby current allows capacitorbased backup to be used as well. Since they support 3-V operation, they are appropriate for use in portable systems that operate from batteries.

Features

Supply voltage range: 2.7 to 5.5 V

— 5-V operation: 5.0 V±10%

— 3-V operation: 2.7 to 3.6 V

Access times

5-V operation

LC35256DM, DT-70: 70 ns (max) LC35256D, DM, DT-10: 100 ns (max)

3-V operation

LC35256DM, DT-70: 200 ns (max) LC35256D, DM, DT-10: 500 ns (max)

Standby current

5-V operation: 1.0 µA (Ta 60°C),

5.0µA (Ta 85°C)

3-V operation: 0.8 µA (Ta 60°C),

4.0µA (Ta 85°C)

Operating temperature range: –40 to +85°C

Data retention supply voltage: 2.0 to 5.5 V

All I/O levels

5-V operation: TTL compatible

3-V operation: VCC – 0.2 V/0.2 V

Shared I/O pins and 3-state outputs

No clock signal required.

Packages

28-pin DIP (600 mil) plastic package: LC35256D

28-pin SOP (450 mil) plastic package: LC35256DM

28-pin TSOP (8 × 13.4 mm) plastic package: LC35256DT

Package Dimensions

unit: mm

3012A-DIP28

[LC35256D]

SANYO: DIP28

unit: mm

3187-SOP28D

[LC35256DM]

SANYO: SOP28D

unit: mm

3221-TSOP28(type-I)

[LC35256DT]

SANYO: TSOP28(type-I)

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51398RM (OT) No. 5823-1/8

LC35256D-10, LC35256DM, DT-70/10

Pin Assignment

Block Diagram

Address buffer

 

Row decoder

Input data buffer

Input data control circuit

Memory cell array

Column

Output

I/O circuit

data

buffer

Column decoder

Address buffer

Pin Functions

A0 to A14

Address inputs

 

 

 

 

 

 

 

 

 

 

Read/write control input

 

WE

 

 

 

 

 

 

 

 

 

 

Output enable input

 

 

OE

 

 

 

 

 

 

 

 

 

 

Chip enable input

 

 

CE

 

 

 

 

 

 

 

I/O1 to I/O8

Data I/O

 

 

 

 

 

 

VCC, GND

Power supply, ground

No. 5823-2/8

LC35256D-10, LC35256DM, DT-70/10

Function Table

 

 

 

 

 

 

 

 

 

 

 

 

Mode

 

CE

OE

 

WE

I/O

Supply current

 

 

 

 

 

 

 

 

 

 

 

 

Read cycle

 

L

 

L

 

H

Data output

ICCA

Write cycle

 

L

 

X

 

L

Data input

ICCA

Output disable

 

L

 

H

 

H

High-impedance

ICCA

Unselected

 

H

 

X

 

X

High-impedance

ICCS

X : H or L

 

 

 

 

 

 

 

 

 

 

 

Specifications

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Ratings

Unit

 

 

 

 

 

Maximum supply voltage

VCC max

 

7.0

V

Input pin voltage

VIN

 

–0.3* to VCC + 0.3

V

I/O pin voltage

VI/O

 

–0.3 to VCC + 0.3

V

Operating temperature

Topr

 

–40 to +85

°C

 

 

 

 

 

Storage temperature

Tstg

 

–55 to +125

°C

 

 

 

 

 

Note *: –3.0 V for pulse widths of up to 30 ns.

I/O Capacitances at Ta = 25°C, f = 1 MHz

Parameter

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

 

 

 

I/O pin capacitance

CI/O

VI/O = 0 V

 

6

10

pF

Input pin capacitance

CIN

VIN = 0 V

 

6

10

pF

Note: These parameters are not measured in all units, but rather are only measured in sampled units.

[5-V Operation]

DC Allowable Operating Ranges at Ta = –40 to +85°C, VCC = 4.5 to 5.5 V

Parameter

Symbol

Conditions

 

Ratings

 

Unit

 

 

 

min

typ

max

 

 

 

 

 

 

 

 

 

 

 

Supply voltage

VCC

 

4.5

5.0

5.5

V

Input voltages

VIH

 

2.2

 

VCC + 0.3

V

VIL

 

–0.3*

 

+0.8

V

 

 

 

Note *: –3.0 V for pulse widths of up to 30 ns.

DC Electrical Characteristics at Ta = –40 to +85°C, VCC = 4.5 to 5.5 V

Parameter

Symbol

 

 

 

 

 

 

Conditions

 

Ratings

 

Unit

 

 

 

 

 

 

 

 

 

 

 

 

 

 

min

typ*

max

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Input leakage current

ILI

VIN = 0 to VCC

 

 

 

 

 

 

 

–1.0

 

+1.0

µA

Output leakage current

ILO

V

 

= VIH or V

 

= VIH or V

 

= VIL, VI/O = 0 to VCC

–1.0

 

+1.0

µA

CE

OE

WE

 

High-level output voltage

VOH

IOH = –1.0 mA

 

 

 

 

 

 

 

2.4

 

 

V

Low-level output voltage

VOL

IOL = 2.0 mA

 

 

 

 

 

 

 

 

 

0.4

V

 

 

ICCA2

V

 

= VIL, II/O = 0 mA, VIN = VIH or VIL

 

 

5.0

mA

 

 

CE

 

 

Operating

TTL inputs

 

V

 

 

= VIL, VIN

= VIH or VIL,

min

LC35256DM, DT-70

 

35

40

mA

 

 

 

 

 

 

 

 

 

 

 

 

current drain

ICCA3

CE

cycle

LC35256D, DM, DT-10

 

25

30

mA

 

II/O = 0 mA, Duty 100%

 

 

 

 

1 µs cycle

 

3.5

6.0

mA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCC – 0.2 V/

 

V

 

 

VCC – 0.2 V,

Ta 25°C

 

0.01

 

µA

 

 

CE

 

 

 

 

 

Standby mode

ICCS1

Ta 60°C

 

 

1.0

µA

0.2 V inputs

VIN = 0 to VCC

 

 

 

 

 

 

 

 

current drain

 

 

 

 

 

 

 

Ta 85°C

 

 

5.0

µA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

TTL inputs

ICCS2

V

 

= VIH, VIN = 0 to VCC

 

 

1.0

mA

 

CE

 

 

Note *: Reference value at Ta = 25°C, VCC = 5 V.

No. 5823-3/8

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