NSC LMC660CN, LMC660CM, LMC660AMJ-883, LMC660AIN, LMC660AIMX Datasheet

April 1998

LMC660

CMOS Quad Operational Amplifier

General Description

The LMC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It operates from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain into realistic loads (2 kΩ and 600Ω) are all equal to or better than widely accepted bipolar equivalents.

This chip is built with National's advanced Double-Poly Silicon-Gate CMOS process.

See the LMC662 datasheet for a dual CMOS operational amplifier with these same features.

Features

nRail-to-rail output swing

nSpecified for 2 kΩ and 600Ω loads

nHigh voltage gain: 126 dB

nLow input offset voltage: 3 mV

nLow offset voltage drift: 1.3 µV/ÊC

nUltra low input bias current: 2 fA

nInput common-mode range includes V−

nOperating range from +5V to +15V supply

nISS = 375 µA/amplifier; independent of V+

nLow distortion: 0.01% at 10 kHz

nSlew rate: 1.1 V/µs

nAvailable in extended temperature range (−40ÊC to +125ÊC); ideal for automotive applications

nAvailable to Standard Military Drawing specification

Applications

nHigh-impedance buffer or preamplifier

nPrecision current-to-voltage converter

nLong-term integrator

nSample-and-Hold circuit

nPeak detector

nMedical instrumentation

nIndustrial controls

nAutomotive sensors

Connection Diagram

14-Pin DIP/SO

DS008767-1

Amplifier Operational Quad CMOS LMC660

© 1999 National Semiconductor Corporation

DS008767

www.national.com

Ordering Information

Package		Temperature Range			NSC	Transport
					Drawing	Media
	Military	Extended	Industrial	Commercial
	−55ÊC to +125ÊC	−40ÊC +125ÊC	−40ÊC to +85ÊC	0ÊC to +70ÊC
14-Pin	LMC660AMJ/883				J14A	Rail
Ceramic DIP
14-Pin		LMC660EM	LMC660AIM	LMC660CM	M14A	Rail
Small Outline						Tape and Reel
14-Pin		LMC660EN	LMC660AIN	LMC660CN	N14A	Rail
Molded DIP
14-Pin
Side Brazed	LMC660AMD				D14E	Rail
Ceramic DIP

www.national.com

2

Absolute Maximum Ratings (Note 3)

If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.

Differential Input Voltage	±Supply Voltage
Supply Voltage	16V
Output Short Circuit to V+	(Note 12)
Output Short Circuit to V−	(Note 1)
Lead Temperature
(Soldering, 10 sec.)	260ÊC
Storage Temp. Range	−65ÊC to +150ÊC
Voltage at Input/Output Pins	(V+) + 0.3V, (V− ) − 0.3V
Current at Output Pin	±18 mA
Current at Input Pin	±5 mA
Current at Power Supply Pin	35 mA
Power Dissipation	(Note 2)
Junction Temperature	150ÊC
ESD tolerance (Note 8)	1000V

Operating Ratings

Temperature Range
LMC660AMJ/883,
LMC660AMD	−55ÊC £ TJ £ +125ÊC
LMC660AI	−40ÊC	£ TJ £ +85ÊC
LMC660C	0ÊC £ TJ £ +70ÊC
LMC660E	−40ÊC	£ TJ £ +125ÊC
Supply Voltage Range	4.75V to 15.5V
Power Dissipation		(Note 10)
Thermal Resistance (qJA) (Note 11)
14-Pin Ceramic DIP		90ÊC/W
14-Pin Molded DIP		85ÊC/W
14-Pin SO		115ÊC/W
14-Pin Side Brazed
Ceramic DIP		90ÊC/W

DC Electrical Characteristics

Unless otherwise specified, all limits guaranteed for TJ = 25ÊC. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.

Parameter	Conditions	Typ	LMC660AMD	LMC660AI	LMC660C	LMC660E	Units
		(Note 4)	LMC660AMJ/883
			Limit	Limit	Limit	Limit
			(Notes 4, 9)	(Note 4)	(Note 4)	(Note 4)
Input Offset Voltage		1	3	3	6	6	mV
			3.5	3.3	6.3	6.5	max
Input Offset Voltage		1.3					µV/ÊC
Average Drift
Input Bias Current		0.002	20				pA
			100	4	2	60	max
Input Offset Current		0.001	20				pA
			100	2	1	60	max
Input Resistance		>1					TeraW
Common Mode	0V £ VCM £ 12.0V	83	70	70	63	63	dB
Rejection Ratio	V+ = 15V		68	68	62	60	min
Positive Power Supply	5V £ V+ £ 15V	83	70	70	63	63	dB
Rejection Ratio	VO = 2.5V		68	68	62	60	min
Negative Power Supply	0V £ V− £ −10V	94	84	84	74	74	dB
Rejection Ratio			82	83	73	70	min
Input Common-Mode	V+ = 5V & 15V	−0.4	−0.1	−0.1	−0.1	−0.1	V
Voltage Range	For CMRR ³ 50 dB		0	0	0	0	max
		V+ − 1.9	V + − 2.3	V + − 2.3	V + − 2.3	V + − 2.3	V
			V+ − 2.6	V + − 2.5	V + − 2.4	V + − 2.6	min
Large Signal	RL = 2 kW (Note 5)	2000	400	440	300	200	V/mV
Voltage Gain	Sourcing		300	400	200	100	min
	Sinking	500	180	180	90	90	V/mV
			70	120	80	40	min
	RL = 600W (Note 5)	1000	200	220	150	100	V/mV
	Sourcing		150	200	100	75	min
	Sinking	250	100	100	50	50	V/mV
			35	60	40	20	min

3	www.national.com

DC Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ = 25ÊC. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.

Parameter	Conditions	Typ	LMC660AMD	LMC660AI	LMC660C	LMC660E	Units
		(Note 4)	LMC660AMJ/883
			Limit	Limit	Limit	Limit
			(Notes 4, 9)	(Note 4)	(Note 4)	(Note 4)
Output Swing	V+ = 5V	4.87	4.82	4.82	4.78	4.78	V
	RL = 2 kΩ to V+/2		4.77	4.79	4.76	4.70	min
		0.10	0.15	0.15	0.19	0.19	V
			0.19	0.17	0.21	0.25	max
	V+ = 5V	4.61	4.41	4.41	4.27	4.27	V
	RL = 600Ω to V+/2		4.24	4.31	4.21	4.10	min
		0.30	0.50	0.50	0.63	0.63	V
			0.63	0.56	0.69	0.75	max
	V+ = 15V	14.63	14.50	14.50	14.37	14.37	V
	RL = 2 kΩ to V+/2		14.40	14.44	14.32	14.25	min
		0.26	0.35	0.35	0.44	0.44	V
			0.43	0.40	0.48	0.55	max
	V+ = 15V	13.90	13.35	13.35	12.92	12.92	V
	RL = 600Ω to V+/2		13.02	13.15	12.76	12.60	min
		0.79	1.16	1.16	1.45	1.45	V
			1.42	1.32	1.58	1.75	max
Output Current	Sourcing, VO = 0V	22	16	16	13	13	mA
V+ = 5V			12	14	11	9	min
	Sinking, VO = 5V	21	16	16	13	13	mA
			12	14	11	9	min
Output Current	Sourcing, VO = 0V	40	19	28	23	23	mA
V+ = 15V			19	25	21	15	min
	Sinking, VO = 13V	39	19	28	23	23	mA
	(Note 12)		19	24	20	15	min
Supply Current	All Four Amplifiers	1.5	2.2	2.2	2.7	2.7	mA
	VO = 1.5V		2.9	2.6	2.9	3.0	max

AC Electrical Characteristics

Unless otherwise specified, all limits guaranteed for TJ = 25ÊC. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.

Parameter	Conditions	Typ	LMC660AMD	LMC660AI	LMC660C	LMC660E	Units
		(Note 4)	LMC660AMJ/883
			Limit	Limit	Limit	Limit
			(Notes 4, 9)	(Note 4)	(Note 4)	(Note 4)
Slew Rate	(Note 6)	1.1	0.8	0.8	0.8	0.8	V/µs
			0.5	0.6	0.7	0.4	min
Gain-Bandwidth Product		1.4	0.5				MHz
Phase Margin		50					Deg
Gain Margin		17					dB
Amp-to-Amp Isolation	(Note 7)	130					dB
Input Referred Voltage Noise	F = 1 kHz	22
Input Referred Current Noise	F = 1 kHz	0.0002

www.national.com

4

AC Electrical Characteristics (Continued)

Unless otherwise specified, all limits guaranteed for TJ = 25ÊC. Boldface limits apply at the temperature extremes. V+ = 5V, V− = 0V, VCM = 1.5V, VO = 2.5V and RL > 1M unless otherwise specified.

Parameter	Conditions	Typ	LMC660AMD	LMC660AI	LMC660C	LMC660E	Units
		(Note 4)	LMC660AMJ/883
			Limit	Limit	Limit	Limit
			(Notes 4, 9)	(Note 4)	(Note 4)	(Note 4)
Total Harmonic Distortion	F = 10 kHz,	0.01					%
	AV = −10
	RL = 2 kΩ,
	VO = 8 VPP
	V+ = 15V

Note 1: Applies to both single supply and split supply operation. Continuous short circuit operation at elevated ambient temperature and/or multiple Op Amp shorts can result in exceeding the maximum allowed junction temperature of 150ÊC. Output currents in excess of ±30 mA over long term may adversely affect reliability.

Note 2: The maximum power dissipation is a function of TJ(max), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(max) − T A)/θJA.

Note 3: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.

Note 4: Typical values represent the most likely parametric norm. Limits are guaranteed by testing or correlation.

Note 5: V+ = 15V, VCM = 7.5V and RL connected to 7.5V. For Sourcing tests, 7.5V ≤ VO ≤ 11.5V. For Sinking tests, 2.5V ≤ VO ≤ 7.5V.

Note 6: V+ = 15V. Connected as Voltage Follower with 10V step input. Number specified is the slower of the positive and negative slew rates.

Note 7: Input referred. V+ = 15V and RL = 10 kΩ connected to V+/2. Each amp excited in turn with 1 kHz to produce VO = 13 VPP.

Note 8: Human body model, 1.5 kΩ in series with 100 pF.

Note 9: A military RETS electrical test specification is available on request. At the time of printing, the LMC660AMJ/883 RETS spec complied fully with the boldface limits in this column. The LMC660AMJ/883 may also be procured to a Standard Military Drawing specification.

Note 10: For operating at elevated temperatures the device must be derated based on the thermal resistance θJA with PD = (TJ − T A)/θJA.

Note 11: All numbers apply for packages soldered directly into a PC board.

Note 12: Do not connect output to V+ when V+ is greater than 13V or reliability may be adversely affected.

Typical Performance Characteristics VS = ±7.5V, TA = 25ÊC unless otherwise specified

Supply Current	Offset Voltage	Input Bias Current
vs Supply Voltage

	DS008767-25	DS008767-26
	DS008767-24
Output Characteristics	Output Characteristics	Input Voltage Noise
Current Sinking	Current Sourcing	vs Frequency

DS008767-27	DS008767-28	DS008767-29

5	www.national.com