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Connectorized PIN Photodiodes
Technical Data
Features
•Industry Standard Connectors–FC, ST® and SC
•1200 nm to 1650 nm Wavelength
•High Responsivity
•High Reliability Planar InGaAs Photodiode
•Range of Flange Options
•Low Dark Current
•-40°C to +85°C Operation
Description
The PDT range of products includes a variety of connectorized PIN photodiodes designed for wide operating temperature, low cost applications such as fiber in the loop. The planar InGaAs photodiodes are manufactured using our MOVPE growth technology and give low leakage, high responsivity performance with excellent reliability.
Applications
•Optical Data Communication Receivers
•O-E Convertors
•LANS
•FDDI Networks
•Instrumentation
•FITL
•Single and Multimode Fiber Communications Systems
The construction of the devices includes a hermetically sealed photodiode and is designed to be compatible with the environmental requirements of the Bellcore TA-TSY-000983 document.
The product range includes a variety of pinout, connector type
PDT0X1X
and flange mounting options, designed to match the majority of offerings in the marketplace. If the specific arrangement or performance you require is not listed, please contact HewlettPackard. Highly flexible design and manufacturing processes allow both physical and electrooptic customization to suit your needs.
ST® is a Registered Trademark of AT&T.
ESD WARNING: NORMAL HANDLING PRECAUTIONS SHOULD BE TAKEN TO AVOID STATIC DISCHARGE.
504 |
5965-5857E (11/96) |
PDT Connectorized PIN Photodiode Specifications
Absolute Maximum Ratings
Absolute maximum limits mean that no catastrophic damage will occur if the product is subjected to these ratings for short periods, provided each limiting parameter is in isolation and all other parameters have values within the performance specification. It should not be assumed that limiting values of more than one parameter can be applied to the product at the same time.
Parameter |
Symbol |
Minimum |
Maximum |
Units |
|
|
|
|
|
Reverse Voltage |
Vr |
– |
20 |
V |
|
|
|
|
|
Reverse Current |
Ir |
– |
12 |
mA |
|
|
|
|
|
Forward Voltage |
Vf |
– |
1 |
V |
|
|
|
|
|
Forward Current |
If |
– |
5 |
mA |
|
|
|
|
|
Power Dissipation |
– |
– |
50 |
mW |
|
|
|
|
|
Operating Temperature |
Tc |
-40 |
85 |
°C |
Storage Temperature |
Ts |
-40 |
85 |
°C |
Soldering–10 seconds |
– |
– |
260 |
°C |
Performance Specification
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|
|
Test Conditions: |
PDT031X |
PDT041X |
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|
Unless Otherwise Stated |
|
||||
|
Parameter |
Symbol |
Vr = 5 V, Tc = 25°C |
|
|
|
|
Units |
|
Min. |
Max. |
Min. |
Max. |
||||
|
Dark Current |
Id |
|
– |
1 |
– |
1 |
nA |
|
|
|
|
|
|
|
|
|
|
|
|
Tc = 85°C |
– |
50 |
– |
50 |
nA |
|
|
|
||||||
|
Reverse Breakdown |
Vbr |
Ir = 10 μA |
35 |
– |
35 |
– |
V |
|
Voltage |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Capacitance |
C |
1 MHz |
– |
1.1 |
– |
1.7 |
pF |
|
|
|
|
|
|
|
|
|
|
Responsivity |
R |
λ = 1300 nm |
0.7 |
– |
0.7 |
– |
A/W |
|
Operating |
λ |
80% points |
1200 |
1650 |
1200 |
1650 |
nm |
|
Wavelength |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Rise/Fall Times |
τr/τf |
10% to 90% |
– |
0.25 |
– |
0.5 |
nS |
505
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