IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com |
Vishay Siliconix |
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Power MOSFET |
PRODUCT SUMMARY
VDS (V) |
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60 |
RDS(on) ( ) |
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VGS = 5 V |
0.05 |
Qg max. (nC) |
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35 |
Qgs (nC) |
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7.1 |
Qgd (nC) |
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25 |
Configuration |
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Single |
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D |
I2PAK (TO-262) |
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D2PAK (TO-263) |
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G |
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G |
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D S |
D |
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S |
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S |
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N-Channel MOSFET |
FEATURES |
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• Advanced process technology |
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• Surface mount (IRLZ34S, SiHLZ34S) |
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• Low-profile through-hole (IRLZ34L, SiHLZ34L) |
Available |
• 175 °C operating temperature |
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• Fast switching |
Available |
•Fully avalanche rated
•Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
*This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ34L, SiHLZ34L) is available for low-profile applications.
ORDERING INFORMATION
Package |
D2PAK (TO-263) |
I2PAK (TO-262) |
Lead (Pb)-free and Halogen-free |
SiHLZ34S-GE3 |
- |
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Lead (Pb)-free |
IRLZ34SPbF |
IRLZ34LPbF |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
60 |
V |
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Gate-Source Voltage |
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VGS |
± 10 |
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Continuous Drain Current |
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VGS at 5 V |
TC = 25 °C |
ID |
30 |
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TC = 100 °C |
21 |
A |
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Pulsed Drain Current a |
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IDM |
110 |
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Linear Derating Factor |
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0.59 |
W/°C |
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Single Pulse Avalanche Energy b |
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EAS |
128 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
88 |
W |
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Maximum Power Dissipation (PCB mount) e |
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TA = 25 °C |
3.7 |
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Peak Diode Recovery dV/dt c |
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dV/dt |
4.5 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
-55 to +175 |
°C |
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Soldering Recommendations (Peak temperature) d |
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for 10 s |
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300 |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 , IAS = 30 A (see fig. 12).
c.ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C.
d.1.6 mm from case.
e.When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. E, 18-Jan-16 |
1 |
Document Number: 90418 |
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For technical questions, contact: hvm@vishay.com |
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com |
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Vishay Siliconix |
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THERMAL RESISTANCE RATINGS |
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PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
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UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
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40 |
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(PCB mount) a |
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°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
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1.7 |
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Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
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MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0, ID = 250 μA |
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60 |
- |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
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0.07 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
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1.0 |
- |
2.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 10 V |
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- |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 60 V, VGS = 0 V |
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- |
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25 |
μA |
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VDS = 48 V, VGS = 0 V, TJ = 150 °C |
- |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 5 V |
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ID = 18 A b |
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- |
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0.05 |
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VGS = 4 V |
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ID = 15 A b |
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0.07 |
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Forward Transconductance |
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gfs |
VDS = 25 V, ID = 18 A |
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12 |
- |
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S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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1600 |
- |
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Output Capacitance |
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Coss |
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VDS = 25 V, |
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660 |
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pF |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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170 |
- |
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Total Gate Charge |
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Qg |
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ID = 30 A, VDS = 48 V, |
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35 |
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Gate-Source Charge |
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Qgs |
VGS = 5 V |
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7.1 |
nC |
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see fig. 6 and 13 b |
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Gate-Drain Charge |
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Qgd |
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25 |
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Turn-On Delay Time |
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td(on) |
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14 |
- |
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Rise Time |
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tr |
VDD = 30 V, ID = 30 A, |
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170 |
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ns |
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Turn-Off Delay Time |
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td(off) |
Rg = 6 , RD = 1 , see fig. 10 b |
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30 |
- |
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Fall Time |
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tf |
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56 |
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Internal Source Inductance |
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LS |
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Between lead, |
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- |
7.5 |
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nH |
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and center of die contact |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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D |
- |
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30 |
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showing the |
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A |
Pulsed Diode Forward Current a |
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ISM |
integral reverse |
G |
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110 |
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p - n junction diode |
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S |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 30 A, VGS = 0 V b |
- |
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1.6 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μs b |
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120 |
180 |
ns |
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Body Diode Reverse Recovery Charge |
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Qrr |
- |
700 |
1300 |
nC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
S16-0015-Rev. E, 18-Jan-16 |
2 |
Document Number: 90418 |
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For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L
www.vishay.com |
Vishay Siliconix |
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 1 - Typical Output Characteristics, TC = 25 °C |
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Fig. 2 - Typical Output Characteristics, TC = 175 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
S16-0015-Rev. E, 18-Jan-16 |
3 |
Document Number: 90418 |
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For technical questions, contact: hvm@vishay.com |
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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