Vishay IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L Data Sheet

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IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)		600
RDS(on) ( )	VGS = 10 V		1.2
Qg (Max.) (nC)		60
Qgs (nC)		8.3
Qgd (nC)		30
Configuration		Single

I2PAK (TO-262)		D2PAK (TO-263)
		G
		G
	D S	D
G	D S	S
G		S
		S
		N-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Surface Mount (IRFBC40S, SiHFBC40S)

• Low-Profile Through-Hole (IRFBC40L, SiHFBC40L)

• Available in Tape and Reel (IRFBC40S, SiHFBC40S)

• Dynamic dV/dt Rating

•150 °C Operating Temperature

•Fast Switching

•Fully Avalanche Rated

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK is a surface mount power package capable of the accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRFBC40L, SiHFBC40L) is available for low-profile applications.

ORDERING INFORMATION
Package	D2PAK (TO-263)			D2PAK (TO-263)		I2PAK (TO-262)
Lead (Pb)-free and Halogen-free	SiHFBC40S-GE3			SiHFBC40STRL-GE3a		SiHFBC40L-GE3
Lead (Pb)-free	IRFBC40SPbF			IRFBC40STRLPbFa		IRFBC40LPbF
Lead (Pb)-free	SiHFBC40S-E3			SiHFBC40STL-E3a		SiHFBC40L-E3
	SiHFBC40S-E3			SiHFBC40STL-E3a		SiHFBC40L-E3
Note
a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER					SYMBOL	LIMIT	UNIT

Drain-Source Voltagee					VDS	600	V
Gate-Source Voltagee					VGS	± 20	V
Gate-Source Voltagee					VGS	± 20
Continuous Drain Current		VGS at 10 V	TC = 25 °C		ID	6.2
Continuous Drain Current		VGS at 10 V	TC	= 100 °C	ID	3.9	A
			TC	= 100 °C		3.9	A
Pulsed Drain Currenta,e					IDM	25
Linear Derating Factor						1.0	W/°C
Single Pulse Avalanche Energyb, e					EAS	570	mJ
Repetitive Avalanche Currenta					IAR	6.2	A
Repetitive Avalanche Energya					EAR	13	mJ
Maximum Power Dissipation		TC = 25 °C			PD	130	W
Maximum Power Dissipation		TA = 25 °C			PD	3.1	W
		TA = 25 °C				3.1
Peak Diode Recovery dV/dtc, e					dV/dt	3.0	V/ns
Operating Junction and Storage Temperature Range					TJ, Tstg	- 55 to + 150	°C
Soldering Recommendations (Peak Temperature)		for 10 s				300d	°C
Soldering Recommendations (Peak Temperature)		for 10 s				300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 50 V; starting TJ = 25 °C, L = 27 mH, Rg = 25 , IAS = 6.2 A (see fig. 12).

c.ISD 6.2 A, dI/dt 80 A/μs, VDD VDS, TJ 150 °C.

d.1.6 mm from case.

e.Uses IRFBC40, SiHFBC40 data and test conditions.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91116	www.vishay.com
S11-1053-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	40
(PCB Mounted, steady-state)a	RthJA	-	40	°C/W
Maximum Junction-to-Case	RthJC	-	1.0

Note

a. When mounted on 1" square PCB ( FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER	SYMBOL	TEST CONDITIONS					MIN.	TYP.	MAX.	UNIT

Static
Drain-Source Breakdown Voltage	VDS	VGS = 0, ID = 250 μA					600	-	-	V
VDS Temperature Coefficient	VDS/TJ	Reference to 25 °C, ID = 1 mA					-	0.70	-	V/°C
Gate-Source Threshold Voltage	VGS(th)	VDS = VGS, ID = 250 μA					2.0	-	4.0	V
Gate-Source Leakage	IGSS		VGS = ± 20 V				-	-	± 100	nA
Zero Gate Voltage Drain Current	IDSS	VDS = 600 V, VGS = 0 V					-	-	100	μA
Zero Gate Voltage Drain Current	IDSS	VDS = 480 V, VGS = 0 V, TJ = 125 °C					-	-	500	μA
		VDS = 480 V, VGS = 0 V, TJ = 125 °C					-	-	500
Drain-Source On-State Resistance	RDS(on)	VGS = 10 V			ID = 3.7 Ab		-	-	1.2
Forward Transconductance	gfs	VDS = 100 V, ID = 3.7 Ab					4.7	-	-	S
Dynamic
Input Capacitance	Ciss			VGS = 0 V,			-	1300	-
Output Capacitance	Coss			VGS = 0 V,						pF
Output Capacitance	Coss			VDS = 25 V,			-	160	-	pF
		f = 1.0 MHz, see fig. 5c
Reverse Transfer Capacitance	Crss	f = 1.0 MHz, see fig. 5c					-	30	-
Reverse Transfer Capacitance	Crss						-	30	-
Total Gate Charge	Qg			ID = 6.2 A, VDS = 480 V,			-	-	60
Gate-Source Charge	Qgs	VGS = 10 V		ID = 6.2 A, VDS = 480 V,			-	-	8.3	nC
Gate-Source Charge	Qgs	VGS = 10 V		see fig. 6 and 13b, c			-	-	8.3	nC
Gate-Drain Charge	Qgd						-	-	30
Turn-On Delay Time	td(on)						-	13	-
Rise Time	tr	VDD = 300 V, ID = 6.2 A,					-	18	-
		Rg = 9.1 , RD = 47 ,								ns
Turn-Off Delay Time	td(off)	Rg = 9.1 , RD = 47 ,					-	55	-	ns
Turn-Off Delay Time	td(off)		see fig. 10b, c				-	55	-
Fall Time	tf						-	20	-
Internal Source Inductance	LS	Between lead, and center of die contact					-	7.5	-	nH
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current	IS	MOSFET symbol				D	-	-	6.2
		MOSFET symbol				D
		showing the								A
Pulsed Diode Forward Currenta	ISM	integral reverse			G		-	-	25
		p - n junction diode				S


Body Diode Voltage	VSD	TJ = 25 °C, IS = 6.2 A, VGS = 0 Vb					-	-	1.5	V
Body Diode Reverse Recovery Time	trr	TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb					-	450	940	ns
Body Diode Reverse Recovery Charge	Qrr	TJ = 25 °C, IF = 6.2 A, dI/dt = 100 A/μsb					-	3.8	7.9	μC
Body Diode Reverse Recovery Charge	Qrr						-	3.8	7.9	μC
Forward Turn-On Time	ton	Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

c.Uses IRFBC40, SiHFBC40 data and test conditions.

www.vishay.com	Document Number: 91116
2	S11-1053-Rev. C, 30-May-11
	This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Fig. 1 - Typical Output Characteristics	Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 91116	www.vishay.com
S11-1053-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRFBC40S, SiHFBC40S, IRFBC40L, SiHFBC40L

Vishay Siliconix

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com	Document Number: 91116
4	S11-1053-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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