VISHAY TSML1000, TSML1020, TSML1030, TSML1040 Technical data

TSML1000 / 1020 / 1030 / 1040

Vishay Semiconductors

High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs

Description	TSML1000	TSML1020
TSML1000 series are high efficiency infrared emitting
diodes in GaAlAs on GaAs technology molded in		TSML1030
clear SMD package.
This technology represents best performance for radi-
ant power under pulse conditions, forward voltage
and reliability.		TSML1040

Features

•Outstanding high radiant power

•Low forward voltage

•Suitable for high pulse current operation

•Angle of half intensity ϕ = ± 12°

•Peak wavelength λp = 950 nm

•High reliability

•Matched Phototransistor series: TEMT1000

•Versatile terminal configurations

•Lead-free component

16852

•Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications

For remote control

Photointerrupters

Punched tape readers

Encoder

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Symbol	Value	Unit
Reverse Voltage		VR	5	V
Forward current		IF	100	mA
Peak Forward Current	tp/T = 0.5, tp = 100 µs	IFM	200	mA
Surge Forward Current	tp = 100 µs	IFSM	1.0	A
Power Dissipation		PV	190	mW
Junction Temperature		Tj	100	°C
Operating Temperature Range		Tamb	- 40 to + 85	°C
Storage Temperature Range		Tstg	- 40 to + 100	°C
Soldering Temperature	t ≤ 5 sec	Tsd	<260	°C
Thermal Resistance Junction/		RthJA	400	°C
Ambient

Basic Characteristics

Tamb = 25 °C, unless otherwise specified

Tamb = 25 °C, unless otherwise specified

Parameter	Test condition	Symbol	Min	Typ.	Max		Unit
Forward Voltage	IF = 20 mA, tp = 20 ms	VF		1.2	1.5		V
	IF = 1 A, tp = 100 µs	VF		2.6			V
Temp. Coefficient of VF	IF = 1 mA	TKVF		- 1.85			mV/K
Document Number 81033						www.vishay.com
Rev. 1.8, 08-Mar-05						1

TSML1000 / 1020 / 1030 / 1040							VISHAY
Vishay Semiconductors
Parameter	Test condition	Symbol	Min	Typ.	Max			Unit
Reverse Current	VR = 5 V	IR			10			µA
Junction capacitance	VR = 0 V, f = 1 MHz, E = 0	Cj		25				pF
Radiant Intensity	IF = 20 mA, tp = 20 ms	Ie	3	7	15			mW/sr
Radiant Power	IF = 100 mA, tp = 20 ms	φe		35				mW
Temp. Coefficient of φe	IF = 20 mA	TKφe		- 0.6				%/K
Angle of Half Intensity		ϕ		±12				deg
Peak Wavelength	IF = 100 mA	λp		950				nm
Spectral Bandwidth	IF = 100 mA	∆λ		50				nm
Temp. Coefficient of λp	IF = 100 mA	TKλp		0.2				nm/K
Rise Time	IF = 100 mA	tr		800				ns
Fall Time	IF = 100 mA	tf		800				ns
Virtual Source Diameter				1.2				mm

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

	200
)	180
mW
	160
(
Dissipation	140
	120
	100
Power	80
	60
-	40
V
P	20
	0
	0	10	20	30	40	50	60	70	80	90	100
16187		Tamb - Ambient Temperature							(° C )

	10000
)
( mA		0.1		0.05	0.02
Current	1000				tp /T = 0.01
		0.2
- Forward
	100	0.5
		1.0
F
I
	10
	0.01	0.10		1.00	10.00	100.00
14335		tp	- Pulse Duration ( ms )

Figure 1. Power Dissipation vs. Ambient Temperature

Figure 3. Pulse Forward Current vs. Pulse Duration

												10 4
	120
mA )											)
	100										( mA	10 3
CurrentForward(	80										CurrentForward	10 1
	60											10 2
	40
-											-
F	20										F
I											I
	0											10 0
	0	10	20	30	40	50	60	70	80	90 100		0
16188		Tamb - Ambient Temperature							(° C )		13600

tp = 100 µs tp/T = 0.001

1

2

3

4

VF - Forward Voltage ( V )

Figure 2. Forward Current vs. Ambient Temperature

Figure 4. Forward Current vs. Forward Voltage

www.vishay.com	Document Number 81033
2	Rev. 1.8, 08-Mar-05

	VISHAY	TSML1000 / 1020 / 1030 / 1040
		Vishay Semiconductors

Voltage	1.2
	1.1
Forward							IF = 10 mA
	1.0
Relative-
	0.9
Frel	0.8
V
	0.7
	0		20		40		60				80			100
94 7990			Tamb - Ambient Temperature ( ° C )

Figure 5. Relative Forward Voltage vs. Ambient Temperature

)	1000
mW/sr(	100
IntensityRadiant
	1
-	10
e
I
	0.1
	10 0		10 1					10 2					10 3					10 4
16189				IF - Forward Current ( mA )

	1.6
	1.2
e rel												IF = 20 mA
; Φ	0.8
e rel
I
	0.4
	0
																		140
	-10		0		10				50			100
94 7993					Tamb - Ambient Temperature													( ° C )

Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature

Power	1.25
	1.0
Radiant
	0.75
Relative-
	0.5
e rel
	0.25
Φ						IF = 100 mA
	0
													1000
	900			950
94 7994				λ - Wavelength ( nm )

Figure 6. Radiant Intensity vs. Forward Current

Figure 9. Relative Radiant Power vs. Wavelength

	1000								0°	10°	20°
)												30°
mW	100				Intensity
PowerRadiant(												40°
	10				Relative-	1.0
e						0.8						60°
						0.9						50°
-	1
Φ
					rel
					S	0.7						70°
	0.1											80°
	10 0	10 1	10 2	10 3	10 4
13602		IF - Forward Current ( mA )			18234	0.6	0.4	0.2	0	0.2	0.4	0.6

Figure 7. Radiant Power vs. Forward Current

Figure 10. Relative Radiant Intensity vs. Angular Displacement

Document Number 81033	www.vishay.com
Rev. 1.8, 08-Mar-05	3