Vishay 15ETH06, 15ETH06S, 15ETH06-1 Data Sheet

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Bulletin PD-20749 rev. D 08/01

15ETH06

15ETH06S 15ETH06-1

Hyperfast Rectifier

Features

trr = 22ns typ.

Hyperfastfast Recovery Time

Low Forward Voltage Drop

IF(AV) = 15Amp

Low Leakage Current

175°C Operating Junction Temperature

VR = 600V

Single Die Center Tap Module

Description/ Applications

State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast recover time, and soft recovery.

The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics.

These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling diodes.

The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers.

Absolute Maximum Ratings

 

Parameters

 

Max

 

Units

VRRM

Peak Repetitive Peak Reverse Voltage

 

600

 

V

IF(AV)

Average Rectified Forward Current

@ TC = 140°C

15

 

A

IFSM

Non Repetitive Peak Surge Current

@ TJ = 25°C

120

 

 

IFM

Peak Repetitive Forward Current

 

30

 

 

TJ, TSTG

Operating Junction and Storage Temperatures

- 65 to 175

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Case Styles

 

 

 

 

 

 

 

 

 

 

15ETH06

15ETH06S

 

15ETH06-1

 

Base

Base

 

 

2

 

Cathode

Cathode

 

 

 

 

 

2

 

 

 

1

3

1

3

1

3

Cathode

Anode

N/C

Anode

N/C

Anode

TO-220AC

 

D2PAK

 

TO-262

 

 

 

 

 

 

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1

15ETH06, 15ETH06S, 15ETH06-1

Bulletin PD-20749 rev. D 08/01

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

 

Parameters

Min

Typ

Max

Units

Test Conditions

 

 

 

 

 

 

 

VBR, Vr

Breakdown Voltage,

600

-

-

V

IR = 100µA

 

Blocking Voltage

 

 

 

 

 

VF

Forward Voltage

-

1.8

2.2

V

IF = 15A, TJ = 25°C

 

 

-

1.3

1.6

V

IF = 15A, TJ = 150°C

IR

Reverse Leakage Current

-

0.2

50

µA

VR = VR Rated

 

 

-

30

500

µA

TJ = 150°C, VR = VR Rated

CT

Junction Capacitance

-

20

-

pF

VR = 600V

LS

Series Inductance

-

8.0

-

nH

Measured lead to lead 5mm from package body

 

 

 

 

 

 

 

Dynamic Recovery Characteristics @ TC = 25°C (unless otherwise specified)

 

Parameters

Min

Typ

Max

Units

Test Conditions

 

 

 

 

 

 

 

 

 

trr

Reverse Recovery Time

-

22

30

ns

IF = 1A, diF/dt = 100A/µs, VR = 30V

 

 

-

28

35

 

IF = 15A, diF/dt = 100A/µs, VR = 30V

 

 

-

29

-

 

TJ = 25°C

 

 

 

 

-

75

-

 

TJ = 125°C

 

IF = 15A

IRRM

Peak Recovery Current

-

3.5

-

A

TJ = 25°C

 

 

diF /dt = 200A/µs

 

 

-

7

-

 

TJ = 125°C

 

VR = 390V

Qrr

Reverse Recovery Charge

-

57

-

nC

TJ = 25°C

 

 

 

 

-

300

-

 

TJ = 125°C

 

 

trr

Reverse Recovery Time

-

51

-

ns

 

 

IF = 15A

 

 

 

 

 

 

 

 

IRRM

Peak Recovery Current

-

20

-

A

TJ = 125°C

 

 

diF /dt = 800A/µs

Qrr

Reverse Recovery Charge

-

580

-

nC

 

 

VR = 390V

 

 

 

 

 

 

 

 

 

 

 

Thermal - Mechanical Characteristics

 

 

 

 

 

 

Parameters

 

Min

Typ

Max

Units

 

 

 

 

 

 

 

TJ

Max. Junction Temperature Range

 

-

-

175

°C

 

 

 

 

 

 

 

TStg

Max. Storage Temperature Range

 

- 65

-

175

 

 

 

 

 

 

 

 

RthJC

Thermal Resistance, Junction to Case

Per Leg

-

1.0

1.3

°C/W

 

 

 

 

 

 

 

RthJA !

Thermal Resistance, Junction to Ambient

Per Leg

-

-

70

 

RthCS "

Thermal Resistance, Case to Heatsink

 

-

0.5

-

 

 

Weight

 

-

2.0

-

g

 

 

 

 

 

 

 

 

 

 

-

0.07

-

(oz)

 

 

 

 

 

 

 

 

Mounting Torque

 

6.0

-

12

Kg-cm

 

 

 

 

 

 

 

 

 

 

5.0

-

10

lbf.in

 

 

 

 

 

 

 

! Typical Socket Mount

"#Mounting Surface, Flat, Smooth and Greased

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Vishay 15ETH06, 15ETH06S, 15ETH06-1 Data Sheet

15ETH06, 15ETH06S, 15ETH06-1

Bulletin PD-20749 rev. D 08/01

 

100

 

 

 

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>(µA)

 

 

 

 

 

 

<![if ! IE]>

<![endif]>R

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Current - I

<![if ! IE]>

<![endif]>F

 

 

 

 

 

<![if ! IE]>

<![endif]>Reverse

<![if ! IE]>

<![endif]>(A)

 

 

 

 

 

 

<![if ! IE]>

<![endif]>- I

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Current

 

 

 

T J

= 175˚C

 

<![if ! IE]>

<![endif]>Forward

 

 

 

T

= 25˚C

 

 

 

 

 

T

= 150˚C

 

 

10

 

 

J

 

 

<![if ! IE]>

<![endif]>Instantaneous

 

 

 

J

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>C

 

 

 

 

 

 

<![if ! IE]>

<![endif]>(pF)

 

 

 

 

 

 

<![if ! IE]>

<![endif]>T

 

 

 

 

 

 

<![if ! IE]>

<![endif]>Junction Capacitance -

 

1

 

 

 

 

 

 

0.5

1

1.5

2

2.5

3

1000

T J = 175˚C

100

150˚C

10 125˚C

1 100˚C

0.1

25˚C

0.01

0.001

0

0

100

200

300

400

500

600

Reverse Voltage - VR (V)

Fig. 2 - Typical Values Of Reverse Current

Vs. Reverse Voltage

1000

T J= 25˚C

100

10

0

100

200

300

400

500

600

Forward Voltage Drop - VFM (V)

Reverse Voltage - VR (V)

Fig.1 -Typical Forward Voltage Drop Characteristics

Fig.3-Typical Junction Capacitance

 

Vs. Reverse Voltage

 

10

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>(°C/W)

 

 

 

 

 

 

 

 

<![if ! IE]>

<![endif]>thJC

1

D = 0.50

 

 

 

 

 

<![if ! IE]>

<![endif]>Z

 

D = 0.20

 

 

PDM

 

<![if ! IE]>

<![endif]>Impedance

 

 

 

 

 

D = 0.10

 

 

 

 

 

 

 

 

 

 

D = 0.05

 

 

 

t1

 

 

D = 0.02

 

 

 

 

0.1

D = 0.01

 

 

 

t 2

 

<![if ! IE]>

<![endif]>Thermal

 

 

 

 

 

Notes:

 

 

 

 

 

Single Pulse

 

1. Duty factor D =

t1/ t2

 

 

 

(Thermal Resistance)

 

2. Peak Tj = Pdm x ZthJC + Tc

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

0.00001

0.0001

0.001

0.01

0.1

1

10

t1, Rectangular Pulse Duration (Seconds)

Fig.4 - Max. Thermal Impedance ZthJC Characteristics

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