Vishay BYX82TR, BYX83TR, BYX84TR, BYX85TR, BYX86TR Schematics

BYX82, BYX83, BYX84, BYX85, BYX86

www.vishay.com	Vishay Semiconductors

Standard Avalanche Sinterglass Diode

949539

MECHANICAL DATA

Case: SOD-57

Terminals: plated axial leads, solderable per MIL-STD-750, method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 369 mg

FEATURES

•Glass passivated junction

•Hermetically sealed package

•Low reverse current

•High surge current loading

•Material categorization:

For definitions of compliance please see www.vishay.com/doc?99912

APPLICATIONS

•Rectification, general purpose

ORDERING INFORMATION (Example)

DEVICE NAME	ORDERING CODE	TAPED UNITS	MINIMUM ORDER QUANTITY
BYX86	BYX86TR	5000 per 10" tape and reel	25 000
BYX86	BYX86TAP	5000 per ammopack	25 000

PARTS TABLE

PART	TYPE DIFFERENTIATION	PACKAGE
BYX82	VR = 200 V; IF(AV) = 2 A	SOD-57
BYX83	VR = 400 V; IF(AV) = 2 A	SOD-57
BYX84	VR = 600 V; IF(AV) = 2 A	SOD-57
BYX85	VR = 800 V; IF(AV) = 2 A	SOD-57
BYX86	VR = 1000 V; IF(AV) = 2 A	SOD-57

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

	PARAMETER	TEST CONDITION	PART	SYMBOL	VALUE	UNIT
			BYX82	VR = VRRM	200	V
	Reverse voltage = repetitive peak		BYX83	VR = VRRM	400	V
		See electrical characteristics	BYX84	VR = VRRM	600	V
	reverse voltage
			BYX85	VR = VRRM	800	V
			BYX86	VR = VRRM	1000	V
	Peak forward surge current	tp = 10 ms, half sine wave		IFSM	50	A
	Repetitive peak forward current			IFRM	10	A
	Average forward current	Tamb 45 °C		IF(AV)	2	A
	i2t-rating			i2 t	8	A2s
	Junction and storage temperature			Tj = Tstg	- 55 to + 175	°C
	range

Rev. 1.7, 11-Sep-12

1

Document Number: 86052

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

BYX82, BYX83, BYX84, BYX85, BYX86

www.vishay.com	Vishay Semiconductors

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

	PARAMETER	TEST CONDITION	SYMBOL	VALUE	UNIT
	Junction ambient	Lead length l = 10 mm, TL = constant	RthJA	45	K/W
		On PC board with spacing 25 mm	RthJA	100	K/W

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

	PARAMETER	TEST CONDITION	SYMBOL	MIN.	TYP.	MAX.	UNIT
	Forward voltage	IF = 1 A	VF	-	0.9	1	V
	Reverse current	VR = VRRM	IR	-	0.1	1	μA
		VR = VRRM, Tj = 100 °C	IR	-	10	25	μA
	Diode capacitance	VR = 4 V, f = 1 MHz	CD	-	20	-	pF
	Reverse recovery time	IF = 0.5 A, IR = 1 A, iR = 0.25 A	trr	-	2	4	μs
	Reverse recovery charge	IF = IR = 1 A, dI/dt = 5 A/μs	Qrr	-	3	6	μC

TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

K/W)(	120
			l	l
Ambient	100
	80
Junction/
	60		TL= constant
Resist.	40
–Therm.	20
	0
thJA
		0	5	10	15	20	25	30
R				l – Lead Length ( mm )
94 9572

Fig. 1 - Max. Thermal Resistance vs. Lead Length

	240
C )		RthJA ≤ 57 K/W RthJA≤ 35 K/W
°	200
(		RthJA ≤ 100 K/W
Temperature
	160			VRRM
	120	BYX		VR
Junction			BYX
	80	82	84
		BYX	BYX
–	40	83	85
j
T				BYX
	0			86
	0	400	800	1200	1600
94 9579 Reverse / Repetitive Peak Reverse Voltage ( V )

Fig. 2 - Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage

(A )	10
Current	1			Tj = 175°C
Forward
												Tj = 25°C
–	0.1
F
I
	0.01					Scattering Limits
	0				0.6							1.2						1.8					2.4			3.0
94 9573							VF – Forward Voltage ( V )
	Fig. 3 - Forward Current vs. Forward Voltage
( pF )	30
	24
Capacitance
	18
Diode–
	12
D
	6
C
														f = 1 MHz
	0													Tj = 25°C
	0.1				1													10								100
94 9574							VR – Reverse Voltage ( V )

Fig. 4 - Typ. Diode Capacitance vs. Reverse Voltage

Rev. 1.7, 11-Sep-12

2

Document Number: 86052

For technical questions within your region: [e-mail], [e-mail], [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000