IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com |
Vishay Siliconix |
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Power MOSFET |
PRODUCT SUMMARY
VDS (V) |
- 200 |
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RDS(on) ( ) |
VGS = - 10 V |
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3.0 |
Qg (Max.) (nC) |
8.9 |
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Qgs (nC) |
2.1 |
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Qgd (nC) |
3.9 |
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Configuration |
Single |
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DPAK |
IPAK |
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(TO-252) |
(TO-251) |
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D |
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G |
S |
D |
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D |
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P-Channel MOSFET |
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9210, SiHFR9210)
• Straight Lead (IRFU9210, SiHFU9210)
• Available in Tape and Reel
•P-Channel
•Fast Switching
•Material categorization: For definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
The power MOSFETs technology is the key to Vishay’s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package |
DPAK (TO-252) |
DPAK (TO-252) |
IPAK (TO-251) |
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Lead (Pb)-free and Halogen-free |
SiHFR9210-GE3 |
SiHFR9210TR-GE3 |
SiHFU9210-GE3 |
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Lead (Pb)-free |
IRFR9210PbF |
IRFR9210TRPbFa |
IRFU9210PbF |
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SiHFR9210-E3 |
SiHFR9210T-E3a |
SiHFU9210-E3 |
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Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
LIMIT |
UNIT |
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Drain-Source Voltage |
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VDS |
- 200 |
V |
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Gate-Source Voltage |
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VGS |
± 20 |
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Continuous Drain Current |
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VGS at - 10 V |
TC = 25 °C |
ID |
- 1.9 |
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TC = 100 °C |
- 1.2 |
A |
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Pulsed Drain Currenta |
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IDM |
- 7.6 |
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Linear Derating Factor |
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0.20 |
W/°C |
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Linear Derating Factor (PCB Mount)e |
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0.020 |
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Single Pulse Avalanche Energyb |
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EAS |
300 |
mJ |
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Repetitive Avalanche Currenta |
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IAR |
- 1.9 |
A |
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Repetitive Avalanche Energya |
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EAR |
2.5 |
mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
PD |
25 |
W |
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Maximum Power Dissipation (PCB Mount)e |
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TA = 25 °C |
2.5 |
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Peak Diode Recovery dV/dtc |
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dV/dt |
- 5.0 |
V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 150 |
°C |
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Soldering Recommendations (Peak Temperature)d |
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for 10 s |
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260 |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = - 50 V, starting TJ = 25 °C, L = 124 mH, Rg = 25 , IAS = - 1.9 A (see fig. 12).
c.ISD - 1.9 A, dI/dt 70 A/μs, VDD VDS, TJ 150 °C.
d.1.6 mm from case.
e.When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0166-Rev. C, 04-Feb-13 |
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Document Number: 91281 |
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For technical questions, contact: hvm@vishay.com |
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com |
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Vishay Siliconix |
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THERMAL RESISTANCE RATINGS |
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PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
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UNIT |
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Maximum Junction-to-Ambient |
RthJA |
- |
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110 |
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Maximum Junction-to-Ambient |
RthJA |
- |
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50 |
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°C/W |
(PCB Mount)a |
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Maximum Junction-to-Case (Drain) |
RthJC |
- |
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5.0 |
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Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0 V, ID = - 250 μA |
- 200 |
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- |
V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = - 1 mA |
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- 0.23 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = - 250 μA |
- 2.0 |
- |
- 4.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 20 V |
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- |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = - 200 V, VGS = 0 V |
- |
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- 100 |
μA |
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VDS = - 160 V, VGS = 0 V, TJ = 125 °C |
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- 500 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = - 10 V |
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ID = - 1.1 Ab |
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3.0 |
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Forward Transconductance |
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gfs |
VDS = - 50 V, ID = - 1.1 A |
0.98 |
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S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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170 |
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Output Capacitance |
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Coss |
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pF |
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VDS = - 25 V, |
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54 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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16 |
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Total Gate Charge |
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Qg |
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ID = - 1.3 A, VDS = - 160 V, |
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8.9 |
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Gate-Source Charge |
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Qgs |
VGS = - 10 V |
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2.1 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
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3.9 |
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Turn-On Delay Time |
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td(on) |
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- |
8.0 |
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Rise Time |
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tr |
VDD = - 100 V, ID = - 2.3 A, |
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12 |
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ns |
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Turn-Off Delay Time |
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td(off) |
Rg = 24 , RD = 41 , see fig. 10b |
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11 |
- |
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Fall Time |
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tf |
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13 |
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Internal Drain Inductance |
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LD |
Between lead, |
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D |
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4.5 |
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6 mm (0.25") from |
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package and center of |
G |
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nH |
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Internal Source Inductance |
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LS |
die contact |
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S |
- |
7.5 |
- |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
IS |
MOSFET symbol |
D |
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- 1.9 |
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showing the |
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A |
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integral reverse |
G |
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Pulsed Diode Forward Currenta |
ISM |
- |
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- 7.6 |
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p - n junction diode |
S |
Body Diode Voltage |
VSD |
TJ = 25 °C, IS = - 1.9 A, VGS = 0 Vb |
- |
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- 5.8 |
V |
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Body Diode Reverse Recovery Time |
trr |
TJ = 25 °C, IF = - 2.3 A, dI/dt = 100 A/μsb |
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110 |
220 |
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Body Diode Reverse Recovery Charge |
Qrr |
- |
0.56 |
1.1 |
μC |
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Forward Turn-On Time |
ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
S13-0166-Rev. C, 04-Feb-13 |
2 |
Document Number: 91281 |
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For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com |
Vishay Siliconix |
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, TC = 25 °C |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics, TC = 150 °C |
Fig. 4 - Normalized On-Resistance vs. Temperature |
S13-0166-Rev. C, 04-Feb-13 |
3 |
Document Number: 91281 |
|
For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFR9210, IRFU9210, SiHFR9210, SiHFU9210
www.vishay.com |
Vishay Siliconix |
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Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage |
Fig. 7 - Typical Source-Drain Diode Forward Voltage |
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Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage |
Fig. 8 - Maximum Safe Operating Area |
S13-0166-Rev. C, 04-Feb-13 |
4 |
Document Number: 91281 |
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For technical questions, contact: hvm@vishay.com |
|
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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