IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) |
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60 |
RDS(on) ( ) |
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VGS = 5 V |
0.20 |
Qg (Max.) (nC) |
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8.4 |
Qgs (nC) |
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3.5 |
Qgd (nC) |
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6.0 |
Configuration |
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Single |
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D |
I2PAK (TO-262) |
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D2PAK (TO-263) |
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G |
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G |
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D S |
D |
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S |
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S |
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N-Channel MOSFET |
FEATURES
•Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount (IRLZ14S, SiHLZ14S)
• Low-Profile Through-Hole (IRLZ14L, SiHLZ14L)
• 175 °C Operating Temperature
•Fast Switching
•Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extermely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
The through-hole version (IRLZ44L, SiHLZ44L) is available for low-profile applications.
ORDERING INFORMATION |
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Package |
D2PAK (TO-263) |
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D2PAK (TO-263) |
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D2PAK (TO-263) |
I2PAK (TO-262) |
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Lead (Pb)-free and Halogen-free |
SiHLZ14S-GE3 |
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SiHLZ14STRL-GE3a |
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SiHLZ14STRR-GE3a |
- |
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Lead (Pb)-free |
IRLZ14SPbF |
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- |
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IRLZ14STRRPbFa |
IRLZ14LPbF |
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SiHLZ14S-E3 |
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- |
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SiHLZ14STR-E3 |
SiHLZ14L-E3 |
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Note |
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a. See device orientation. |
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) |
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PARAMETER |
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SYMBOL |
LIMIT |
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UNIT |
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Drain-Source Voltagee |
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VDS |
60 |
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V |
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Gate-Source Voltage |
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VGS |
± 10 |
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Continuous Drain Current |
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VGS at 5 V |
TC = 25 °C |
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ID |
10 |
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TC = 100 °C |
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7.2 |
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A |
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Pulsed Drain Currenta, e |
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IDM |
40 |
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Linear Derating Factor |
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0.29 |
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W/°C |
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Single Pulse Avalanche Energyb, e |
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EAS |
68 |
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mJ |
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Maximum Power Dissipation |
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TC = 25 °C |
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PD |
43 |
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W |
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TA = 25 °C |
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3.7 |
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Peak Diode Recovery dV/dtc, e |
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dV/dt |
4.5 |
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V/ns |
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Operating Junction and Storage Temperature Range |
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TJ, Tstg |
- 55 to + 175 |
°C |
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Soldering Recommendations (Peak Temperature) |
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for 10 s |
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300d |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.VDD = 25 V, starting TJ = 25 °C, L = 790 μH, Rg = 25 , IAS = 10 A (see fig. 12).
c.ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
d.1.6 mm from case.
e.Uses IRLZ14, SiHLZ14 data and test conditions.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 90414 |
www.vishay.com |
S11-1044-Rev. C, 30-May-11 |
1 |
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER |
SYMBOL |
TYP. |
MAX. |
UNIT |
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Maximum Junction-to-Ambient |
RthJA |
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40 |
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(PCB Mount)a |
°C/W |
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Maximum Junction-to-Case (Drain) |
RthJC |
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3.5 |
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Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER |
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SYMBOL |
TEST CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
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Static |
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Drain-Source Breakdown Voltage |
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VDS |
VGS = 0, ID = 250 μA |
60 |
- |
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V |
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VDS Temperature Coefficient |
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VDS/TJ |
Reference to 25 °C, ID = 1 mA |
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0.07 |
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V/°C |
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Gate-Source Threshold Voltage |
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VGS(th) |
VDS = VGS, ID = 250 μA |
1.0 |
- |
2.0 |
V |
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Gate-Source Leakage |
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IGSS |
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VGS = ± 10 V |
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± 100 |
nA |
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Zero Gate Voltage Drain Current |
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IDSS |
VDS = 60 V, VGS = 0 V |
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25 |
μA |
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VDS = 48 V, VGS = 0 V, TJ = 150 °C |
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250 |
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Drain-Source On-State Resistance |
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RDS(on) |
VGS = 5 V |
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ID = 6.0 Ab |
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0.2 |
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VGS = 4 V |
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ID = 5.0 Ab |
- |
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0.28 |
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Forward Transconductance |
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gfs |
VDS = 25 V, ID = 6.0 A |
3.5 |
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S |
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Dynamic |
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Input Capacitance |
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Ciss |
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VGS = 0 V, |
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400 |
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Output Capacitance |
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Coss |
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pF |
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VDS = 25 V, |
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170 |
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f = 1.0 MHz, see fig. 5 |
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Reverse Transfer Capacitance |
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Crss |
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42 |
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Total Gate Charge |
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Qg |
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ID = 10 A, VDS = 48 V, |
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8.4 |
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Gate-Source Charge |
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Qgs |
VGS = 5 V |
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3.5 |
nC |
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see fig. 6 and 13b |
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Gate-Drain Charge |
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Qgd |
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- |
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6.0 |
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Turn-On Delay Time |
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td(on) |
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9.3 |
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Rise Time |
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tr |
VDD = 30 V, ID = 10 A, |
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110 |
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ns |
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Turn-Off Delay Time |
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td(off) |
Rg = 12 , RD = 2.8 , see fig. 10b |
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17 |
- |
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Fall Time |
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tf |
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26 |
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Internal Source Inductance |
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LS |
Between lead, and center of die contact |
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7.5 |
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nH |
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Drain-Source Body Diode Characteristics |
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Continuous Source-Drain Diode Current |
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IS |
MOSFET symbol |
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10 |
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showing the |
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A |
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integral reverse |
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Pulsed Diode Forward Currenta |
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ISM |
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G |
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40 |
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p - n junction diode |
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Body Diode Voltage |
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VSD |
TJ = 25 °C, IS = 10 A, VGS = 0 Vb |
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1.6 |
V |
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Body Diode Reverse Recovery Time |
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trr |
TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb |
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93 |
130 |
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Body Diode Reverse Recovery Charge |
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Qrr |
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340 |
650 |
nC |
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Forward Turn-On Time |
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ton |
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) |
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Notes
a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b.Pulse width 300 μs; duty cycle 2 %.
www.vishay.com |
Document Number: 90414 |
2 |
S11-1044-Rev. C, 30-May-11 |
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This document is subject to change without notice. |
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRLZ14S, IRLZ14L, SiHLZ14S, SiHLZ14L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics |
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Fig. 3 - Typical Transfer Characteristics |
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Fig. 2 - Typical Output Characteristics |
Fig. 4 - Normalized On-Resistance vs. Temperature |
Document Number: 90414 |
www.vishay.com |
S11-1044-Rev. C, 30-May-11 |
3 |
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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