Vishay 1N1183 Series, 1N3765 Series, 1N1183A Series, 1N2128A Series Data Sheet

1N1183, 1N3765, 1N1183A, 1N2128A Series

Vishay High Power Products

Power Silicon Rectifier Diodes,

35 A/40 A/60 A

DESCRIPTION/FEATURES

•

Low leakage current series

•

Good surge current capability up to 1000 A

•

Can be supplied to meet stringent military, aerospace and

other high reliability requirements

• Compliant to RoHS directive 2002/95/EC

DO-203AB (DO-5)

PRODUCT SUMMARY

IF(AV)

35 A/40 A/60 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

TEST CONDITIONS

1N1183

1N3765

1N1183A

1N2128A

UNITS

IF(AV)

35 (1)

35 (1)

40 (1)

60 (1)

A

T

140 (1)

140 (1)

150 (1)

140 (1)

°C

C

IFSM

50 Hz

480

380

765

860

A

60 Hz

500 (1)

400 (1)

800 (1)

900 (1)

I2t

50 Hz

1140

730

2900

3700

A2s

60 Hz

1040

670

2650

3400

I2√t

16 100

10 300

41 000

52 500

A2√s

VRRM

Range

50 to 600 (1)

700 to 1000 (1)

50 to 600 (1)

50 to 600 (1)

V

Note

(1) JEDEC registered values

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

VRRM, MAXIMUM REPETITIVE

VRM, MAXIMUM DIRECT

TYPE NUMBER

PEAK REVERSE VOLTAGE

REVERSE VOLTAGE

(TJ = - 65 °C TO 200 °C (2))

(TJ = - 65 °C TO 200 °C (2))

V

V

1N1183

1N1183A

1N2128A

50 (1)

50 (1)

1N1184

1N1184A

1N2129A

100 (1)

100 (1)

1N1185

1N1185A

1N2130A

150 (1)

150 (1)

1N1186

1N1186A

1N2131A

200 (1)

200 (1)

1N1187

1N1187A

1N2133A

300 (1)

300 (1)

1N1188

1N1188A

1N2135A

400 (1)

400 (1)

1N1189

1N1189A

1N2137A

500 (1)

500 (1)

1N1190

1N1190A

1N2138A

600 (1)

600 (1)

1N3765

700 (1)

700 (1)

1N3766

800 (1)

800 (1)

1N3767

900 (1)

900 (1)

1N3768

1000 (1)

1000 (1)

Notes

(1)JEDEC registered values

(2)For 1N1183 Series and 1N3765 Series TC = - 65 °C to 190 °C

•Basic type number indicates cathode to case. For anode to case, add “R” to part number, e.g., 1N1188R, 1N3766R, 1N1186AR, 1N2135RA

1N1183, 1N3765, 1N1183A, 1N2128A Series

Vishay High Power Products				Power Silicon Rectifier Diodes,
				35 A/40 A/60 A
FORWARD CONDUCTION
PARAMETER		SYMBOL		TEST CONDITIONS				1N1183		1N3765	1N1183A	1N2128A	UNITS
Maximum average forward current		IF(AV)		1-phase operation,				35 (1)		35 (1)	40 (1)	60 (1)	A
at case temperature				180° sinusoidal conduction				140 (1)		140 (1)	150 (1)	140 (1)	°C
				Half cycle 50 Hz	Following any
				sine wave or 6 ms				480		380	765	860
					rated load
				rectangular pulse
					condition and
				Half cycle 60 Hz
					with rated
				sine wave or 5 ms				500 (1)		400 (1)	800 (1)	900 (1)
					VRRM applied
Maximum peak one cycle				rectangular pulse
		IFSM											A
non-repetitive surge current				Half cycle 50 Hz	Following any
				sine wave or 6 ms	rated load			570		455	910	1000
				rectangular pulse	condition and
				Half cycle 60 Hz	with ½ VRRM
				sine wave or 5 ms	applied following			595		475	950	1050
				rectangular pulse	surge = 0
				t = 10 ms	With rated VRRM			1140		730	2900	3700
					applied following
Maximum I2t for fusing
				t = 8.3 ms	surge, initial			1040		670	2650	3400
					TJ = TJ maximum
		I2t											A2s
				t = 10 ms	With VRRM = 0			1610		1030	4150	5250
Maximum I2t for individual					following surge,
device fusing				t = 8.3 ms	initial TJ =			1470		940	3750	4750
					TJ maximum
Maximum I2√t for individual		I2√t (2)		t = 0.1 to 10 ms,				16 100		10 300	41 500	52 500	A2√s
device fusing				VRRM = 0 following surge
Maximum peak forward voltage		VFM		TJ = 25 °C				1.7 (1)		1.8 (1)	1.3 (1)	1.3 (1)	V
at maximum forward current (IFM)								110		110	126	188	A
	VRRM = 700							-		5.0 (1)	-	-
	VRRM = 800			Maximum rated IF(AV) and TC				-		4.0 (1)	-	-
Maximum average
	VRRM = 900	IR(AV)						-		3.0 (1)	-	-	mA
reverse current
	VRRM = 1000							-		2.0 (1)	-	-
				Maximum rated I	, V	RRM	and T	10 (1)		-	2.5 (1)	10 (1)
				F(AV)			C

Notes

(1)JEDEC registered values

(2)I2t for time tx = I2√t x √tx

1N1183, 1N3765, 1N1183A, 1N2128A Series

	Power Silicon Rectifier Diodes,		Vishay High Power Products
		35 A/40 A/60 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER	SYMBOL	TEST CONDITIONS	1N1183	1N3765		1N1183A	1N2128A	UNITS
Maximum operating	TC		- 65 to 190 (1)			- 65 to 200
case temperature range
								°C
Maximum storage	TStg		- 65 to 175 (1)			- 65 to 200
temperature range
Maximum internal thermal	RthJC	DC operation	1.00 (1)			1.1 (1)	0.65 (1)
resistance, junction to case
								°C/W
Thermal resistance,	RthCS	Mounting surface, smooth, flat and greased			0.25
case to sink
		Not lubricated thread, tighting on nut (2)	3.4 (30)
Maximum allowable
		Lubricated thread, tighting on nut (2)	2.3 (20)					N · m
mounting torque								(lbf · in)
		Not lubricated thread, tighting on hexagon (3)	4.2 (37)
(+ 0 %, - 10 %)
		Lubricated thread, tighting on hexagon (3)	3.2 (28)
Approximate weight					17			g
					0.6			oz.
Case style		JEDEC		DO-203AB (DO-5)

Notes

(1)JEDEC registered values

(2)Recommended for pass-through holes

(3)Recommended for holed threaded heatsinks

Fig. 1 - Maximum Allowable Case Temperature vs.	Fig. 2 - Typical Low Level Forward Power Loss vs.
Average Forward Current, 1N1183 and 1N3765 Series	Average Forward Current (Sinusoidal Current Waveform),
	1N1183 and 1N3765 Series