Vishay IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L Data Sheet

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IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

Vishay Siliconix

Power MOSFET

PRODUCT SUMMARY

VDS (V)			60
RDS(on) ( )		VGS = 5 V	0.10
Qg (Max.) (nC)			18
Qgs (nC)			4.5
Qgd (nC)			12
Configuration			Single
I2PAK (TO-262)		D2PAK (TO-263)	D
I2PAK (TO-262)		D2PAK (TO-263)
		G	G
	D S	D	G
		D
G		S
		S

			S
			N-Channel MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21 Definition

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Logic-Level Gate Drive

•RDS (on) Specified at VGS = 4 V and 5 V

•175°C Operating Temperature

•Fast Switching

•Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

The through-hole version (IRLZ24L, SiHLZ24L) is available for low-profile application.

ORDERING INFORMATION

Package	D2PAK (TO-263)	I2PAK (TO-262)
Lead (Pb)-free and Halogen-free	SiHLZ24S-GE3	SiHLZ24L-GE3

Lead (Pb)-free	-	IRLZ24LPbF

	-	SiHLZ24L-E3
	-	SiHLZ24L-E3

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)

PARAMETER			SYMBOL	LIMIT	UNIT

Drain-Source Voltage			VDS	60	V
Gate-Source Voltage			VGS	± 10	V
Gate-Source Voltage			VGS	± 10
Continuous Drain Current	VGS at 5 V	TC = 25 °C	ID	17
Continuous Drain Current	VGS at 5 V	TC = 100 °C	ID	12	A
		TC = 100 °C		12	A
Pulsed Drain Currenta			IDM	68
Linear Derating Factor				0.40	W/°C

Linear Derating Factor (PCB Mount)e				0.025
Linear Derating Factor (PCB Mount)e				0.025
Single Pulse Avalanche Energyb			EAS	110	mJ
Maximum Power Dissipation	TC = 25 °C		PD	60	W
Maximum Power Dissipation (PCB Mount)e	TA = 25 °C		PD	3.7	W
Maximum Power Dissipation (PCB Mount)e	TA = 25 °C			3.7
Peak Diode Recovery dV/dtc			dV/dt	4.5	V/ns
Operating Junction and Storage Temperature Range			TJ, Tstg	- 55 to + 175	°C
Soldering Recommendations (Peak Temperature)	for 10 s			300d	°C
Soldering Recommendations (Peak Temperature)	for 10 s			300d

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.VDD = 25 V, starting TJ = 25 °C, L = 444 μH, Rg = 25 , IAS = 17 A (see fig. 12).

c.ISD 17 A, dI/dt 140 A/μs, VDD VDS, TJ 175 °C.

d.1.6 mm from case.

e.When mounted on 1" square PCB (FR-4 or G-10 material)

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 90416	www.vishay.com
S11-1044-Rev. C, 30-May-11	1

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

Vishay Siliconix

THERMAL RESISTANCE RATINGS

PARAMETER	SYMBOL	TYP.	MAX.	UNIT

Maximum Junction-to-Ambient	RthJA	-	62
Maximum Junction-to-Ambient	RthJA	-	40	°C/W
(PCB Mount)a	RthJA	-	40	°C/W
Maximum Junction-to-Case (Drain)	RthJC	-	2.5

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material).

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0, ID = 250 μA

VDS Temperature Coefficient

VDS/TJ

Reference to 25 °C, ID = 1 mA

0.060

V/°C

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.0

2.0

Gate-Source Leakage

IGSS

VGS = ± 10 V

± 100

Zero Gate Voltage Drain Current

IDSS

VDS = 60 V, VGS = 0 V

μA

VDS = 48 V, VGS = 0 V, TJ = 150 °C

250

Drain-Source On-State Resistance

RDS(on)

VGS = 5 V

ID = 10 Ab

0.10

VGS = 4 V

ID = 8.5 Ab

0.14

Forward Transconductance

gfs

VDS = 25 V, ID = 10 Ab

7.3

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

870

Output Capacitance

Coss

VDS = 25 V,

360

f = 1.0 MHz, see fig. 5

Reverse Transfer Capacitance

Crss

Total Gate Charge

ID = 17 A, VDS = 48 V,

Gate-Source Charge

Qgs

VGS = 5 V

4.5

see fig. 6 and 13b

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time

VDD = 30 V, ID = 17 A,

110

Turn-Off Delay Time

td(off)

Rg = 9 , RD = 1.7 , see fig. 10b

Fall Time

Dynamic

Internal Drain Inductance

Between lead,

4.5

6 mm (0.25") from

Internal Source Inductance

package and center of

7.5

die contact

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

MOSFET symbol

showing the

Pulsed Diode Forward Currenta

ISM

integral reverse

p - n junction diode

Body Diode Voltage

VSD

TJ = 25 °C, IS = 17 A, VGS = 0 Vb

1.5

Body Diode Reverse Recovery Time

trr

TJ = 25 °C, IF = 17 A, dI/dt = 100 A/μsb

110

260

Body Diode Reverse Recovery Charge

Qrr

0.49

1.5

μC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a.Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b.Pulse width 300 μs; duty cycle 2 %.

www.vishay.com	Document Number: 90416
2	S11-1044-Rev. C, 30-May-11
	This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

Vishay Siliconix

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)


Fig. 1 - Typical Output Characteristics, TC = 25 °C			Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics, TC = 175 °C

Fig. 4 - Normalized On-Resistance vs. Temperature

Document Number: 90416	www.vishay.com
S11-1044-Rev. C, 30-May-11	3

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRLZ24S, IRLZ24L, SiHLZ24S, SiHLZ24L

Vishay Siliconix


Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage		Fig. 7 - Typical Source-Drain Diode Forward Voltage

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Fig. 8 - Maximum Safe Operating Area

www.vishay.com	Document Number: 90416
4	S11-1044-Rev. C, 30-May-11

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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